公开(公告)号：US20170054033A1

公开(公告)日：2017-02-23

申请号：US15237107

申请日：2016-08-15

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation, SUNGKYUNKWAN UNIVERSITY

Inventor： Kiyoung LEE ,  Jinseong HEO ,  Woojong YU ,  Yongseon SHIN

IPC: H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L21/04 ,  H01L29/16 ,  H01L29/267

CPC classification number: H01L29/78696 ,  H01L21/02527 ,  H01L21/02565 ,  H01L21/042 ,  H01L29/1606 ,  H01L29/247 ,  H01L29/267 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78693

Abstract: A graphene electronic device includes a gate insulating layer on a conductive substrate, a channel layer on the gate insulating layer, and a source electrode on one end of the channel layer and a drain electrode on another end of the channel layer. The channel layer includes a semiconductor layer and a graphene layer in direct contact with the semiconductor layer, and the graphene layer includes a plurality of graphene islands spaced apart from each other.

Abstract translation: 石墨烯电子器件包括导电衬底上的栅极绝缘层，栅极绝缘层上的沟道层，沟道层一端的源电极和沟道层另一端的漏电极。 沟道层包括与半导体层直接接触的半导体层和石墨烯层，并且石墨烯层包括彼此间隔开的多个石墨烯岛。

公开(公告)号：US20160020280A1

公开(公告)日：2016-01-21

申请号：US14635576

申请日：2015-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinseong HEO ,  Kiyoung LEE ,  Seongjun PARK

IPC: H01L29/16 ,  H01L29/786

Abstract: Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.

Abstract translation: 示例性实施例涉及石墨烯器件，其制造和操作方法，以及包括石墨烯器件的电子设备。 石墨烯装置是多功能装置。 石墨烯装置可以包括石墨烯层和功能材料层。 石墨烯器件可以具有在开关器件/电子器件的结构内的存储器件，压电器件和光电子器件中的至少一个的功能。 功能材料层可以包括电阻变化材料，相变材料，铁电体材料，多铁性材料，多分子，压电材料，发光材料和光活性材料中的至少一种。

公开(公告)号：US20230178585A1

公开(公告)日：2023-06-08

申请号：US18060835

申请日：2022-12-01

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung LEE ,  Darrell G. Schlom ,  Matthew R. Barone ,  Myoungho Jeong

IPC: H10B12/00

CPC classification number: H01L28/56 ,  H01L27/10805 ,  H01L28/60

Abstract: A dielectric thin film includes a stack structure of a perovskite material layer including at least two Group II elements and a rocksalt layer on the perovskite material layer and including at least two Group II elements. A first content ratio of the at least two Group II elements included in the perovskite material layer may be the same as a second content ratio of the at least two Group II elements included in the rocksalt layer.

公开(公告)号：US20160300908A1

公开(公告)日：2016-10-13

申请号：US14932395

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINSEONG HEO ,  Kiyoung LEE ,  Jaeho LEE ,  Seongjun PARK

IPC: H01L29/06 ,  H01L21/225 ,  H01L29/423 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0665 ,  H01L21/2253 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687 ,  H01L29/78696

Abstract: Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

Abstract translation: 提供电子装置及其制造方法。 电子设备包括在基板上的能量阻挡层形成层，在基板上的上部沟道材料层，以及覆盖上部沟道材料层和能量阻挡层形成层的栅电极。 栅电极包括面向能阻层形成层的侧表面的侧栅电极部分。 侧栅电极可以被配置为经由能量阻挡形成层的侧表面直接施加到能量阻挡形成层上的电场，从而能够调节能量阻挡形成层和上通道之间的能量势垒 材料层。 电子设备还可以包括设置在基板上并且不接触上通道材料层的下通道材料层。

公开(公告)号：US20160087042A1

公开(公告)日：2016-03-24

申请号：US14747243

申请日：2015-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Jaeho LEE ,  Jinseong HEO ,  Kiyoung LEE

IPC: H01L29/16 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L29/1606 ,  H01L29/0665 ,  H01L29/165 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/778 ,  H01L29/78642 ,  H01L29/78684 ,  H01L29/78696

Abstract: Example embodiments relate to a fin-type graphene device. The fin-type graphene device includes a substrate, a graphene channel layer substantially vertical to the substrate, a gate insulating layer that covers one side surface of the graphene channel layer, a gate electrode on the gate insulating layer, and a source electrode and a drain electrode that are formed separately from each other on other side surface of the graphene channel layer.

Abstract translation: 示例性实施例涉及翅片型石墨烯装置。 翅片型石墨烯装置包括基板，基本上垂直于基板的石墨烯通道层，覆盖石墨烯通道层的一个侧表面的栅极绝缘层，栅极绝缘层上的栅电极以及源极和 漏电极，其在石墨烯通道层的另一侧表面上彼此分开形成。

公开(公告)号：US20210159072A1

公开(公告)日：2021-05-27

申请号：US16697774

申请日：2019-11-27

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung LEE ,  Woojin LEE ,  Myoungho JEONG ,  Yongsung KIM ,  Eunsun KIM ,  Hyosik MUN ,  Jooho LEE ,  Changseung LEE ,  Kyuho CHO ,  Darrell G. SCHLOM ,  Craig J. FENNIE ,  Natalie M. DAWLEY ,  Gerhard H. OLSEN ,  Zhe WANG

IPC: H01L21/02 ,  H01L49/02

Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

公开(公告)号：US20200152808A1

公开(公告)日：2020-05-14

申请号：US16740900

申请日：2020-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung LEE ,  Jinseong HEO ,  Jaeho LEE ,  Haeryong KIM ,  Seongjun PARK ,  Hyeonjin SHIN ,  Eunkyu LEE ,  Sanghyun JO

IPC: H01L31/0216 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  G01N21/59

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US20170243913A1

公开(公告)日：2017-08-24

申请号：US15244073

申请日：2016-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Kiyoung LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Jinseong HEO ,  Seongjun PARK

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/032

CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14689 ,  H01L31/032 ,  H01L31/035227 ,  H01L31/109

Abstract: An image sensor may include visible light detectors and a near-infrared light detector. The near-infrared light detector may contain a material highly sensitive to near-infrared rays, and thus the size of the near-infrared light detector may be reduced.

公开(公告)号：US20230035431A1

公开(公告)日：2023-02-02

申请号：US17564699

申请日：2021-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Euncheol DO ,  Byunghoon NA ,  Kiyoung LEE

IPC: H01L49/02 ,  H01G4/33 ,  H01L27/108

Abstract: Provided are a capacitor, an electronic device including the same, and a method of manufacturing the same, the capacitor including a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer between the dielectric and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a same crystal structure type as and a different composition from at least one of the first thin film electrode layer, the second thin film electrode layer, or the dielectric layer, the interlayer including at least one of a anionized layer or a neutral layer.

公开(公告)号：US20220238634A1

公开(公告)日：2022-07-28

申请号：US17407653

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon NA ,  Kiyoung LEE ,  Jooho LEE ,  Myoungho JEONG

IPC: H01L49/02 ,  H01G4/30 ,  H01L45/00

Abstract: A capacitor includes a first electrode including a first reinforcement material having a perovskite crystal structure; and a first metallic material having a perovskite crystal structure; a second electrode on the first electrode; and a dielectric layer between the first electrode and the second electrode, wherein the first metallic material has greater a greater electronegativity than that of the first reinforcement material.