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    BINARY IMAGE SENSORS AND UNIT PIXELS THEREOF
    4.
    发明申请
    BINARY IMAGE SENSORS AND UNIT PIXELS THEREOF 有权
    二进制图像传感器及其像素

    公开(公告)号：US20140103193A1

    公开(公告)日：2014-04-17

    申请号：US14052168

    申请日：2013-10-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： GwideokRyan Lee ,  SangChul Sul ,  Myungwon Lee ,  Min-ho Kim ,  Taechan Kim ,  Taeseok Oh ,  KwangHyun Lee ,  Taeyon Lee ,  Younggu Jin

    IPC: H01L27/146

    CPC classification number: H01L27/14609 ,  B82Y20/00 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14679

    Abstract: A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.

    Abstract translation: 二值图像传感器包括在具有光入射的表面的基板上的多个单位像素。 至少一个量子点设置在基板的表面上。 列读出放大器电路被配置为从从所选择的单位像素检测的电压或电流中检测多个单位像素中的所选单位像素的二进制信息，并且处理单元被配置为处理各单位像素的二进制信息 以生成像素图像信息。 还讨论了相关设备和操作方法。

    IMAGE SENSOR
    7.
    发明申请
    IMAGE SENSOR 有权
    图像传感器

    公开(公告)号：US20160190198A1

    公开(公告)日：2016-06-30

    申请号：US14958987

    申请日：2015-12-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： DooWon KWON ,  Taeseok Oh

    IPC: H01L27/146 ,  H01L25/04

    CPC classification number: H01L27/14636 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An image sensor includes a pixel array chip, a logic chip, and an interposed layer. The interposed layer is disposed on the pixel array chip. The logic chip is disposed on the interposed layer. The interposed layer includes a connecting part, a shielding part, and a metal-diffusion barrier layer. The connecting part electrically connects a first interconnection wire of the pixel array chip and a second interconnection wire of the logic chip. The connecting part includes a first metallic element. The shielding part is disposed spatially apart from the connecting part and electrically grounded to suppress an electrical coupling between the pixel array chip and the logic chip. The shielding part includes a second metallic element. The metal-diffusion barrier layer is disposed on top and bottom surfaces of the interposed layer to limit diffusion of electrical charges to the pixel array chip and the logic chip.

    Abstract translation: 图像传感器包括像素阵列芯片，逻辑芯片和插入层。 插入层设置在像素阵列芯片上。 逻辑芯片设置在插入层上。 插入层包括连接部分，屏蔽部分和金属扩散阻挡层。 连接部分电连接像素阵列芯片的第一互连线和逻辑芯片的第二互连线。 连接部分包括第一金属元件。 屏蔽部分在空间上与连接部分配置并电接地以抑制像素阵列芯片和逻辑芯片之间的电耦合。 屏蔽部分包括第二金属元件。 金属扩散阻挡层设置在插入层的顶表面和底表面上，以限制电荷向像素阵列芯片和逻辑芯片的扩散。

    Image sensor
    8.
    发明授权
    Image sensor 有权

    公开(公告)号：US09711554B2

    公开(公告)日：2017-07-18

    申请号：US14958987

    申请日：2015-12-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： DooWon Kwon ,  Taeseok Oh

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/1469 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An image sensor includes a pixel array chip, a logic chip, and an interposed layer. The interposed layer is disposed on the pixel array chip. The logic chip is disposed on the interposed layer. The interposed layer includes a connecting part, a shielding part, and a metal-diffusion barrier layer. The connecting part electrically connects a first interconnection wire of the pixel array chip and a second interconnection wire of the logic chip. The connecting part includes a first metallic element. The shielding part is disposed spatially apart from the connecting part and electrically grounded to suppress an electrical coupling between the pixel array chip and the logic chip. The shielding part includes a second metallic element. The metal-diffusion barrier layer is disposed on top and bottom surfaces of the interposed layer to limit diffusion of electrical charges to the pixel array chip and the logic chip.

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