公开(公告)号：US20130336061A1

公开(公告)日：2013-12-19

申请号：US13909238

申请日：2013-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Young KIM ,  Youngho Lim

IPC: G11C16/16

CPC classification number: G11C16/16 ,  G11C11/406 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582

Abstract: A method of operating a non-volatile memory device includes storing one or more addresses of word lines (WLs), but not the entire addresses of the WLs, into a latch, the WLs disposed between a string selection line (SSL) and a ground selection line (GSL), selecting a first WL from the latch, performing an erasing operation on memory cells associated with the string selection line (SSL), the memory cells associated with the SSL constituting a memory block, and verifying the erasing operation on memory cells associated with the selected first WL.

Abstract translation: 一种操作非易失性存储器件的方法包括将一行或多行字线地址（WL）存储在锁存器中，而不是WL的整个地址，布置在串选择线（SSL）和地之间的WL 选择线（GSL），从锁存器中选择第一WL，对与字符串选择行（SSL）相关联的存储单元执行擦除操作，与构成存储器块的SSL相关联的存储器单元，以及验证存储器上的擦除操作 与所选择的第一WL相关联的单元。

公开(公告)号：US11062784B2

公开(公告)日：2021-07-13

申请号：US16844317

申请日：2020-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il Shim ,  Jae-Hoon Jang ,  Donghyuk Chae ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

IPC: G11C16/10 ,  G11C16/34 ,  G11C16/04 ,  H01L27/11582 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  H01L27/1157

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US08964476B2

公开(公告)日：2015-02-24

申请号：US13867716

申请日：2013-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il Shim ,  Jae-Hoon Jang ,  Donghyuk Chae ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

IPC: G11C16/04 ,  G11C16/08 ,  G11C16/34 ,  H01L27/115 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

Abstract translation: 非易失性存储器件，其操作方法和包括该非易失性存储器件的存储器系统。 非易失性存储器件可以包括存储单元阵列和字线驱动器。 存储单元阵列可以包括多个存储单元。 字线驱动器可以被配置为分别将字线电压施加到连接到多个存储器单元的多个字线。 字线电压的大小可以根据多个字线的位置来确定。

公开(公告)号：US11715537B2

公开(公告)日：2023-08-01

申请号：US17542183

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il Shim ,  Jae-Hoon Jang ,  Donghyuk Chae ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

IPC: G11C16/34 ,  G11C16/04 ,  H10B43/27 ,  G11C16/08 ,  G11C16/12 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4096 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10 ,  H10B43/35

CPC classification number: G11C16/3459 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/4085 ,  G11C11/4096 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H10B43/27 ,  H10B43/35

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US10650903B2

公开(公告)日：2020-05-12

申请号：US16206383

申请日：2018-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il Shim ,  Jae-Hoon Jang ,  Donghyuk Chae ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  H01L27/11582 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  H01L27/1157

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US08923060B2

公开(公告)日：2014-12-30

申请号：US13721963

申请日：2012-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunil Shim ,  Jaehoon Jang ,  Donghyuk Chae ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

IPC: G11C16/04 ,  G11C16/06 ,  G11C16/10 ,  H01L27/115 ,  G11C16/34 ,  G11C16/30

CPC classification number: G11C16/30 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

Abstract: According to example embodiments of inventive concepts, a nonvolatile memory device includes a memory cell array including a plurality of memory cells; a word line driver configured to at least one of select and unselect a plurality of word lines connected with the plurality of memory cells, respectively, and to supply voltages to the plurality of word lines; and a read/write circuit configured to apply bias voltages to a plurality of bit lines connected with the plurality of memory cells. The read/write circuit may be configured to adjust levels of the bias voltages applied to the plurality of bit lines according to location of a selected word line among the plurality of word lines.

Abstract translation: 根据发明构思的示例实施例，非易失性存储器件包括包括多个存储器单元的存储单元阵列; 字线驱动器，被配置为分别选择和取消选择与所述多个存储器单元连接的多个字线中的至少一个，并向所述多个字线提供电压; 以及读/写电路，被配置为向与多个存储单元连接的多个位线施加偏置电压。 读/写电路可以被配置为根据多个字线中所选择的字线的位置来调整施加到多个位线的偏置电压的电平。

公开(公告)号：US20210295895A1

公开(公告)日：2021-09-23

申请号：US17342048

申请日：2021-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il Shim ,  Jae-Hoon Jang ,  Donghyuk Chae ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

IPC: G11C11/408 ,  G11C11/4096 ,  G11C11/4074 ,  G11C5/06

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US09330770B2

公开(公告)日：2016-05-03

申请号：US14590665

申请日：2015-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunil Shim ,  Jaehoon Jang ,  Donghyuk Chae ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

IPC: G11C16/04 ,  G11C16/14 ,  G11C16/34 ,  G11C16/08 ,  G11C16/12 ,  G11C16/26 ,  H01L27/115

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US08837224B2

公开(公告)日：2014-09-16

申请号：US13909238

申请日：2013-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Young Kim ,  Youngho Lim

IPC: G11C16/06 ,  G11C11/406 ,  G11C16/10 ,  H01L27/115 ,  G11C16/04 ,  G11C16/16

CPC classification number: G11C16/16 ,  G11C11/406 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582

Abstract: A method of operating a non-volatile memory device includes storing one or more addresses of word lines (WLs), but not the entire addresses of the WLs, into a latch, the WLs disposed between a string selection line (SSL) and a ground selection line (GSL), selecting a first WL from the latch, performing an erasing operation on memory cells associated with the string selection line (SSL), the memory cells associated with the SSL constituting a memory block, and verifying the erasing operation on memory cells associated with the selected first WL.

Abstract translation: 一种操作非易失性存储器件的方法包括将一行或多行字线地址（WL）存储在锁存器中，而不是WL的整个地址，布置在串选择线（SSL）和地之间的WL 选择线（GSL），从锁存器中选择第一WL，对与字符串选择行（SSL）相关联的存储单元执行擦除操作，与构成存储器块的SSL相关联的存储器单元，以及验证存储器上的擦除操作 与所选择的第一WL相关联的单元。