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公开(公告)号:US11581234B2
公开(公告)日:2023-02-14
申请号:US16888990
申请日:2020-06-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Younglyong Kim , Myungkee Chung , Aenee Jang
IPC: H01L23/367 , H01L25/065 , H01L23/31
Abstract: A semiconductor package including a semiconductor chip, an interposer on the semiconductor chip, and a molding layer covering at least a portion of the semiconductor chip and at least a portion of the interposer may be provided. The interposer includes a interposer substrate and a heat dissipation pattern penetrating the interposer substrate and electrically insulated from the semiconductor chip. The heat dissipation pattern includes a through electrode disposed in the interposer substrate and an upper pad disposed on an upper surface of the interposer substrate and connected to the through electrode. The molding layer covers at least a portion of a sidewall of the upper pad and the upper surface of the interposer substrate. At least a portion of an upper surface of the upper pad is not covered by the molding layer.
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公开(公告)号:US20250022842A1
公开(公告)日:2025-01-16
申请号:US18748254
申请日:2024-06-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ilbok Lee , Sungeun Kim , Younglyong Kim
IPC: H01L23/00 , H01L23/498 , H01L23/538 , H01L25/16 , H10B80/00
Abstract: A semiconductor package includes a package substrate, a sub-package arranged on the package substrate, an underfill material layer arranged between the package substrate and the sub-package, a dam structure spaced apart from the sub-package, on the package substrate, and extending to surround the underfill material layer, and an ejection prevention barrier arranged on one side of the sub-package, on the package substrate, and spaced apart from the sub-package in a first horizontal direction with the dam structure therebetween, wherein a top surface of the dam structure has a first vertical level, and a top surface of the ejection prevention barrier has a second vertical level higher than the first vertical level.
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公开(公告)号:US20240021577A1
公开(公告)日:2024-01-18
申请号:US18121374
申请日:2023-03-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yanggyoo Jung , Seokgeun Ahn , Younglyong Kim
IPC: H01L25/065 , H10B80/00 , H01L23/31 , H01L23/498 , H01L23/538 , H01L23/00
CPC classification number: H01L25/0655 , H10B80/00 , H01L23/3135 , H01L23/49827 , H01L23/5386 , H01L23/49816 , H01L24/08 , H01L24/13 , H01L24/16 , H01L2224/08112 , H01L2224/13147 , H01L2224/16227 , H01L2924/1431 , H01L2924/1437 , H01L2924/1436 , H01L2924/1438 , H01L2924/182
Abstract: In some embodiments, a semiconductor package includes a package substrate, a plurality of semiconductor chips on the package substrate, a plurality of interposers between the package substrate and the plurality of semiconductor chips, and a molding layer in contact with the plurality of semiconductor chips and the plurality of interposers. The plurality of semiconductor chips includes a first semiconductor chip, and a second and a third semiconductor chip spaced apart from the first semiconductor chip in horizontal directions. The plurality of interposers includes a first vertical connection interposer vertically overlapping the first semiconductor chip, a second vertical connection interposer vertically overlapping the second semiconductor chip, a first horizontal connection interposer vertically overlapping the first and the second semiconductor chips, and a second horizontal connection interposer vertically overlapping the second and the third semiconductor chips.
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公开(公告)号:US11488937B2
公开(公告)日:2022-11-01
申请号:US17218340
申请日:2021-03-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunsoo Chung , Myungkee Chung , Younglyong Kim
IPC: H01L25/065 , H01L23/538 , H01L23/31 , H01L23/12
Abstract: A semiconductor package includes a package substrate, a lower package structure on the package substrate that includes a mold substrate, a semiconductor chip in the mold substrate having chip pads exposed through the mold substrate, spacer chips in the mold substrate and spaced apart from the semiconductor chip, and a redistribution wiring layer on the mold substrate that has redistribution wirings electrically connected to the chip pads, first and second stack structures on the lower package structure spaced apart from each other, each of the first and second stack structures including stacked memory chips, and a molding member covering the lower package structure and the first and second stack structures, wherein the mold substrate includes a first covering portion covering side surfaces of the semiconductor chip and the spacer chips, and a second covering portion covering a lower surface of the semiconductor chip.
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公开(公告)号:US12033973B2
公开(公告)日:2024-07-09
申请号:US17367995
申请日:2021-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Soohyun Nam , Younglyong Kim
IPC: H01L23/31 , H01L23/00 , H01L23/498 , H01L25/065
CPC classification number: H01L24/73 , H01L23/49816 , H01L23/49822 , H01L23/49833 , H01L23/49838 , H01L24/16 , H01L24/32 , H01L25/0655 , H01L2224/16235 , H01L2224/32056 , H01L2224/32059 , H01L2224/32235 , H01L2224/73204 , H01L2924/1431 , H01L2924/1434 , H01L2924/1815 , H01L2924/182 , H01L2924/3512
Abstract: A semiconductor package including an interposer substrate, first to third semiconductor chips on the interposer substrate to face each other, an underfill part between each of the first to third semiconductor chips and the interposer substrate, a first side-fill part extending upward from a lower end of side walls of the first to third semiconductor chips, and a second side-fill part between the side walls of the first to third semiconductor chips and extending from the first side-fill part to an upper end of the side walls of the first to third semiconductor chips may be provided.
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公开(公告)号:US20230144602A1
公开(公告)日:2023-05-11
申请号:US17977100
申请日:2022-10-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Younglyong Kim , Hyunsoo Chung , Inhyo Hwang
IPC: H01L25/065 , H01L23/00 , H01L23/31
CPC classification number: H01L25/0657 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/45 , H01L24/73 , H01L2224/29186 , H01L2224/32145 , H01L2224/32225 , H01L2224/45139 , H01L2224/45144 , H01L2224/48145 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2225/06506 , H01L2225/06562
Abstract: The semiconductor package, includes: a package substrate; a substrate adhesive member on the package substrate; a plurality of semiconductor chips stacked on the substrate adhesive member and including first and second semiconductor chips; and a conductive connection member connecting the package substrate and the semiconductor chips, each of the semiconductor chips including a semiconductor chip body, a chip pad, an upper oxide layer comprised of a first material and covering an upper surface of the semiconductor chip body and exposing a portion of an upper surface of the chip pad, and a lower oxide layer comprised of a second material and covering a lower surface of the semiconductor chip body, wherein the upper oxide layer of the first semiconductor chip has an oxide bonding region between the first material and the second material in a first region in contact with the lower oxide layer of the second semiconductor chip.
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公开(公告)号:US11222882B2
公开(公告)日:2022-01-11
申请号:US16916779
申请日:2020-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Younglyong Kim
IPC: H01L25/18 , H01L23/00 , H01L23/48 , H01L23/538
Abstract: Disclosed is a semiconductor package including a first semiconductor chip on a substrate, a second semiconductor chip on the substrate and laterally spaced apart from the first semiconductor chip, a dummy chip on the first semiconductor chip, and a dielectric layer between the first semiconductor chip and the dummy chip. A top surface of the first semiconductor chip may be lower than a top surface of the second semiconductor chip. The dielectric layer may include an inorganic dielectric material.
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公开(公告)号:US20250167156A1
公开(公告)日:2025-05-22
申请号:US19028917
申请日:2025-01-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Aenee Jang , Younglyong Kim
IPC: H01L23/00 , H01L23/31 , H01L25/065
Abstract: A semiconductor package includes a first semiconductor chip including a first substrate having first and second surfaces opposite to each other, a through electrode in the first substrate, a first chip pad on the first surface and electrically connected to the through electrode, and a second chip pad on the first surface and electrically connected to a circuit element in the first substrate; a redistribution wiring layer on the first surface of the first semiconductor chip, and including a first redistribution wiring line electrically connected to the first chip pad and a second redistribution wiring line electrically connected to the second chip pad; a second semiconductor chip stacked on the second surface of the first semiconductor chip and electrically connected to the through electrode; and a molding member on side surfaces of the first and second semiconductor chips.
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公开(公告)号:US20240079349A1
公开(公告)日:2024-03-07
申请号:US18334578
申请日:2023-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yanggyoo Jung , Younglyong Kim , Seungbin Baek
IPC: H01L23/00 , H01L23/053 , H01L23/36 , H01L23/538 , H01L25/065 , H01L25/16
CPC classification number: H01L23/562 , H01L23/053 , H01L23/36 , H01L23/5385 , H01L24/32 , H01L25/0655 , H01L25/16 , H01L24/16 , H01L24/73 , H01L2224/16227 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204
Abstract: A semiconductor package is provided to include a package substrate, a plurality of semiconductor chips mounted on the package substrate, an interposer arranged between the package substrate and the plurality of semiconductor chips, a plurality of passive elements mounted on the package substrate and spaced apart from the interposer, a first stiffener positioned on the package substrate and including a first hole accommodating the interposer and a second hole accommodating the plurality of passive elements, and a second stiffener positioned on the first stiffener and including a third hole communicating with the first hole. The first stiffener has a first coefficient of thermal expansion, and the second stiffener has a second coefficient of thermal expansion different from the first coefficient of thermal expansion.
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公开(公告)号:US20230126686A1
公开(公告)日:2023-04-27
申请号:US17871449
申请日:2022-07-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Inhyo Hwang , Younglyong Kim , Hyunsoo Chung
IPC: H01L23/498 , H01L23/00 , H01L25/00 , H01L25/065
Abstract: A semiconductor package includes a package substrate and a plurality of sub-packages provided on the package substrate. Each of the plurality of sub-packages includes a semiconductor chip, an interposer provided adjacent to the semiconductor chip, the interposer including a plurality of first through-silicon vias, an encapsulator provided between the semiconductor chip and the interposer, and a redistribution layer provided on the interposer, the encapsulator and the semiconductor chip. The semiconductor chip includes a semiconductor substrate having a first surface and a second surface opposite the first surface and a plurality of chip pads provided on the first surface. The redistribution layer includes a plurality of redistribution pads and a horizontal wiring provided between the plurality of redistribution pads and the plurality of first through-silicon vias. The redistribution layer is provided on the second surface of the semiconductor substrate, and extends on the encapsulator and the interposer.
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