Semiconductor package with improved heat dissipation

    公开(公告)号:US11581234B2

    公开(公告)日:2023-02-14

    申请号:US16888990

    申请日:2020-06-01

    Abstract: A semiconductor package including a semiconductor chip, an interposer on the semiconductor chip, and a molding layer covering at least a portion of the semiconductor chip and at least a portion of the interposer may be provided. The interposer includes a interposer substrate and a heat dissipation pattern penetrating the interposer substrate and electrically insulated from the semiconductor chip. The heat dissipation pattern includes a through electrode disposed in the interposer substrate and an upper pad disposed on an upper surface of the interposer substrate and connected to the through electrode. The molding layer covers at least a portion of a sidewall of the upper pad and the upper surface of the interposer substrate. At least a portion of an upper surface of the upper pad is not covered by the molding layer.

    SEMICONDUCTOR PACKAGE
    2.
    发明申请

    公开(公告)号:US20250022842A1

    公开(公告)日:2025-01-16

    申请号:US18748254

    申请日:2024-06-20

    Abstract: A semiconductor package includes a package substrate, a sub-package arranged on the package substrate, an underfill material layer arranged between the package substrate and the sub-package, a dam structure spaced apart from the sub-package, on the package substrate, and extending to surround the underfill material layer, and an ejection prevention barrier arranged on one side of the sub-package, on the package substrate, and spaced apart from the sub-package in a first horizontal direction with the dam structure therebetween, wherein a top surface of the dam structure has a first vertical level, and a top surface of the ejection prevention barrier has a second vertical level higher than the first vertical level.

    Semiconductor package with stack structure and method of manufacturing the semiconductor package

    公开(公告)号:US11488937B2

    公开(公告)日:2022-11-01

    申请号:US17218340

    申请日:2021-03-31

    Abstract: A semiconductor package includes a package substrate, a lower package structure on the package substrate that includes a mold substrate, a semiconductor chip in the mold substrate having chip pads exposed through the mold substrate, spacer chips in the mold substrate and spaced apart from the semiconductor chip, and a redistribution wiring layer on the mold substrate that has redistribution wirings electrically connected to the chip pads, first and second stack structures on the lower package structure spaced apart from each other, each of the first and second stack structures including stacked memory chips, and a molding member covering the lower package structure and the first and second stack structures, wherein the mold substrate includes a first covering portion covering side surfaces of the semiconductor chip and the spacer chips, and a second covering portion covering a lower surface of the semiconductor chip.

    SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THE SEMICONDUCTOR PACKAGES

    公开(公告)号:US20250167156A1

    公开(公告)日:2025-05-22

    申请号:US19028917

    申请日:2025-01-17

    Abstract: A semiconductor package includes a first semiconductor chip including a first substrate having first and second surfaces opposite to each other, a through electrode in the first substrate, a first chip pad on the first surface and electrically connected to the through electrode, and a second chip pad on the first surface and electrically connected to a circuit element in the first substrate; a redistribution wiring layer on the first surface of the first semiconductor chip, and including a first redistribution wiring line electrically connected to the first chip pad and a second redistribution wiring line electrically connected to the second chip pad; a second semiconductor chip stacked on the second surface of the first semiconductor chip and electrically connected to the through electrode; and a molding member on side surfaces of the first and second semiconductor chips.

    SEMICONDUCTOR PACKAGE INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME

    公开(公告)号:US20230126686A1

    公开(公告)日:2023-04-27

    申请号:US17871449

    申请日:2022-07-22

    Abstract: A semiconductor package includes a package substrate and a plurality of sub-packages provided on the package substrate. Each of the plurality of sub-packages includes a semiconductor chip, an interposer provided adjacent to the semiconductor chip, the interposer including a plurality of first through-silicon vias, an encapsulator provided between the semiconductor chip and the interposer, and a redistribution layer provided on the interposer, the encapsulator and the semiconductor chip. The semiconductor chip includes a semiconductor substrate having a first surface and a second surface opposite the first surface and a plurality of chip pads provided on the first surface. The redistribution layer includes a plurality of redistribution pads and a horizontal wiring provided between the plurality of redistribution pads and the plurality of first through-silicon vias. The redistribution layer is provided on the second surface of the semiconductor substrate, and extends on the encapsulator and the interposer.

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