摘要:
A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.
摘要:
There is provided a technique for forming an Ru film on the bottom of a deep hole with a considerable film thickness for the lower electrode of an information storage capacity element in order to improve the yield of manufacturing DRAMs. The Ru film is formed on the side wall and the bottom of a deep hole as material for preparing the lower electrode of an information storage capacity element to be produced there under the condition of a gasification flow rate ratio of the raw materials ((Ru(C2H5C5H4)2/O2) is not less than 10%. Then, the ratio of the film thickness of the Ru film on the bottom “b” of the hole to the largest film thickness “a” of the Ru film in the hole is not less than 50%.
摘要:
A technique is provided which is capable of forming a Ru film constituting a lower electrode of an information storing capacitive element in an aperture with high precision. After a Ru film is deposited, heat treatment is performed in a reducing atmosphere on a side wall and a bottom portion of a deep aperture in which the information storing capacitive element is formed. The deposition and heating of Ru films can be repeated to form a laminated structure of Ru films. As a result, it is possible to effectively remove impurities included in the Ru film, and to achieve fineness of the Ru film.
摘要:
In a method of manufacturing a semiconductor integrated circuit device in which a lower electrode of a capacitor is composed of a polycrystalline silicon film having a surface area increased by surface roughening, an impurity is introduced into the polycrystalline silicon film by vapor phase diffusion in order to reduce the resistance of the lower electrode.
摘要:
There is provided a technique for forming an Ru film on the bottom of a deep hole with a considerable film thickness for the lower electrode of an information storage capacity element in order to improve the yield of manufacturing DRAMs. The Ru film is formed on the side wall and the bottom of a deep hole as material for preparing the lower electrode of an information storage capacity element to be produced there under the condition of a gasification flow rate ratio of the raw materials ((Ru(C2H5C5H4)2/O2) is not less than 10% Then, the ratio of the film thickness of the Ru film on the bottom “b” of the hole to the largest film thickness “a” of the Ru film in the hole is not less than 50%.
摘要:
To obtain a fuel filler structure for a fuel tank wherein when causing an opening and closing valve to close, it can be ensured that the opening and closing valve does not rapidly rotate to a closed position in which it closes a fuel fill inlet, and when causing the opening and closing valve to open, the opening and closing valve can be opened with a small force. A fuel filler structure is equipped with a damper on the near side of a flapper valve in the insertion direction of a fuel nozzle. When the flapper valve rotates to an open position, the damper does not act on the flapper valve, and when the flapper valve rotates to a closed position, the damper acts on the flapper valve.
摘要:
Provided is an electrochromic compound represented by the following general formula (I) or (II) where R1 to R13 are each independently a hydrogen atom, a halogen atom, a monovalent organic group, or a polymerizable functional group, and at least one of the R1 to the R13 is a polymerizable functional group.
摘要:
An electrochromic apparatus including a first support, a first electrode, a first transparent conductive layer, an electrochromic layer, a second support, a second electrode, a second transparent conductive layer, and an electrolyte layer is provided. The first and second supports have first and second surfaces, respectively, on each of which a plurality of grooves is formed. The grooves on the second surface are facing the grooves on the first surface. The first and second electrodes are disposed at each one of the plurality of grooves of the first and second supports, respectively. The first and second transparent conductive layers are in contact with the first and second surfaces, respectively. The electrochromic layer is in contact with the first transparent conductive layer. The electrolyte layer is between the electrochromic layer and the second transparent conductive layer.
摘要:
In a jet pump measurement pipe repair method according to the present embodiment, a breakage part of a measurement pipe horizontally fixed to a lower part of a jet pump provided in reactor water in a reactor pressure vessel is repaired. The method has: a step of cutting and removing the measurement pipe including the breakage part; a step of retaining a connection pipe for connecting the remaining measurement pipe on the jet pump by means of a clamp; and a step of connecting ends of the remaining measurement pipe by means of the connection pipe.
摘要:
A resist composition contains; a resin having a structural unit represented by the formula (aa) and a structural unit represented by the formula (ab); and an acid generator, wherein Raa1 represents a hydrogen atom and a methyl group; Aaa1 represents an optionally substituted C1 to C6 alkanediyl group etc.; Raa2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; Rab1 represents a hydrogen atom and a methyl group; Aab1 represents a single bond, an optionally substituted C1 to C6 alkanediyl group etc.; W1 represents an optionally substituted C4 to C24 alicyclic hydrocarbon group; n represents 1 or 2; Aab2 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; Rab2 in each occurrence independently represents a C1 to C12 fluorinated alkyl group.