公开(公告)号：US07259058B2

公开(公告)日：2007-08-21

申请号：US10020314

申请日：2001-12-18

申请人： Yasuhiro Shimamoto ,  Masahiko Hiratani ,  Yuichi Matsui ,  Satoshi Yamamoto ,  Toshihide Nabatame ,  Toshio Ando ,  Hiroshi Sakuma ,  Shinpei Iijima

发明人： Yasuhiro Shimamoto ,  Masahiko Hiratani ,  Yuichi Matsui ,  Satoshi Yamamoto ,  Toshihide Nabatame ,  Toshio Ando ,  Hiroshi Sakuma ,  Shinpei Iijima

IPC分类号： H01L21/8242

CPC分类号： H01L28/60 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/91

摘要： A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.

摘要翻译： 通过化学气相沉积法形成氧气污染少，热稳定性高的钌电极。 在使用有机钌化合物作为前体的化学气相沉积方法中，氧化气体的引入限于当前体供应时，并且允许反应在低氧分压下发生。 因此，可以形成氧含量低的钌膜。 此外，在形成钌膜之后，进行不低于形成温度的退火，由此形成热稳定性高的钌膜。

公开(公告)号：US06423593B1

公开(公告)日：2002-07-23

申请号：US09943516

申请日：2001-08-31

申请人： Satoshi Yamamoto ,  Shinpei Iijima

发明人： Satoshi Yamamoto ,  Shinpei Iijima

IPC分类号： H01L218242

CPC分类号： H01L21/76897 ,  C23C16/40 ,  H01L21/76816 ,  H01L21/76831 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  H01L28/91

摘要： There is provided a technique for forming an Ru film on the bottom of a deep hole with a considerable film thickness for the lower electrode of an information storage capacity element in order to improve the yield of manufacturing DRAMs. The Ru film is formed on the side wall and the bottom of a deep hole as material for preparing the lower electrode of an information storage capacity element to be produced there under the condition of a gasification flow rate ratio of the raw materials ((Ru(C2H5C5H4)2/O2) is not less than 10%. Then, the ratio of the film thickness of the Ru film on the bottom “b” of the hole to the largest film thickness “a” of the Ru film in the hole is not less than 50%.

摘要翻译： 为了提高DRAM的制造成本，提供了用于在信息存储电容元件的下部电极的深孔底部形成Ru膜的技术。 Ru膜形成在深孔的侧壁和底部作为用于制备在原料的气化流量比（（Ru（ C2H5C5H4）2 / O2）不小于10％，然后孔中底部的Ru膜厚度与孔中的Ru膜的最大膜厚“a”的比率为 不低于50％。

公开(公告)号：US06649465B2

公开(公告)日：2003-11-18

申请号：US09943506

申请日：2001-08-31

申请人： Shinpei Iijima ,  Satoshi Yamamoto

发明人： Shinpei Iijima ,  Satoshi Yamamoto

IPC分类号： H01L218242

CPC分类号： H01L28/60 ,  H01L27/10814 ,  H01L27/10885 ,  H01L28/55 ,  H01L28/91

摘要： A technique is provided which is capable of forming a Ru film constituting a lower electrode of an information storing capacitive element in an aperture with high precision. After a Ru film is deposited, heat treatment is performed in a reducing atmosphere on a side wall and a bottom portion of a deep aperture in which the information storing capacitive element is formed. The deposition and heating of Ru films can be repeated to form a laminated structure of Ru films. As a result, it is possible to effectively remove impurities included in the Ru film, and to achieve fineness of the Ru film.

摘要翻译： 提供了能够以高精度形成构成孔的信息存储电容元件的下电极的Ru膜的技术。 在沉积Ru膜之后，在形成有信息存储电容元件的深孔的侧壁和底部的还原气氛中进行热处理。 可以重复Ru膜的沉积和加热以形成Ru膜的层压结构。 结果，可以有效地除去Ru膜中所含的杂质，并且实现Ru膜的细度。

公开(公告)号：US06632721B1

公开(公告)日：2003-10-14

申请号：US09602887

申请日：2000-06-23

申请人： Shinpei Iijima ,  Satoshi Yamamoto ,  Jun Kuroda ,  Hiroshi Miki ,  Yoshihisa Fujisaki ,  Tadanori Yoshida ,  Kenichi Yamaguchi

发明人： Shinpei Iijima ,  Satoshi Yamamoto ,  Jun Kuroda ,  Hiroshi Miki ,  Yoshihisa Fujisaki ,  Tadanori Yoshida ,  Kenichi Yamaguchi

IPC分类号： H01L2120

CPC分类号： H01L28/84 ,  H01L27/10814 ,  H01L27/10894

摘要： In a method of manufacturing a semiconductor integrated circuit device in which a lower electrode of a capacitor is composed of a polycrystalline silicon film having a surface area increased by surface roughening, an impurity is introduced into the polycrystalline silicon film by vapor phase diffusion in order to reduce the resistance of the lower electrode.

摘要翻译： 在制造半导体集成电路器件的方法中，其中电容器的下电极由具有由表面粗糙度增加的表面积的多晶硅膜构成，通过气相扩散将杂质引入到多晶硅膜中，以便 降低下电极的电阻

公开(公告)号：US06544835B2

公开(公告)日：2003-04-08

申请号：US10173159

申请日：2002-06-18

申请人： Satoshi Yamamoto ,  Shinpei Iijima

发明人： Satoshi Yamamoto ,  Shinpei Iijima

IPC分类号： H01L218242

CPC分类号： H01L21/76897 ,  C23C16/40 ,  H01L21/76816 ,  H01L21/76831 ,  H01L27/10814 ,  H01L28/55 ,  H01L28/60 ,  H01L28/91

摘要： There is provided a technique for forming an Ru film on the bottom of a deep hole with a considerable film thickness for the lower electrode of an information storage capacity element in order to improve the yield of manufacturing DRAMs. The Ru film is formed on the side wall and the bottom of a deep hole as material for preparing the lower electrode of an information storage capacity element to be produced there under the condition of a gasification flow rate ratio of the raw materials ((Ru(C2H5C5H4)2/O2) is not less than 10% Then, the ratio of the film thickness of the Ru film on the bottom “b” of the hole to the largest film thickness “a” of the Ru film in the hole is not less than 50%.

摘要翻译： 为了提高DRAM的制造成本，提供了用于在信息存储电容元件的下部电极的深孔底部形成Ru膜的技术。 Ru膜形成在深孔的侧壁和底部作为用于制备在原料的气化流量比（（Ru（ C2H5C5H4）2 / O2）不小于10％然后，孔中底部“b”上的Ru膜的膜厚与孔中的Ru膜的最大膜厚“a”的比率不是 小于50％。

公开(公告)号：US11167637B2

公开(公告)日：2021-11-09

申请号：US14390693

申请日：2012-04-12

申请人： Satoshi Yamamoto ,  Chiaki Kataoka ,  Masaki Akagi

发明人： Satoshi Yamamoto ,  Chiaki Kataoka ,  Masaki Akagi

IPC分类号： B60K15/04

摘要： To obtain a fuel filler structure for a fuel tank wherein when causing an opening and closing valve to close, it can be ensured that the opening and closing valve does not rapidly rotate to a closed position in which it closes a fuel fill inlet, and when causing the opening and closing valve to open, the opening and closing valve can be opened with a small force. A fuel filler structure is equipped with a damper on the near side of a flapper valve in the insertion direction of a fuel nozzle. When the flapper valve rotates to an open position, the damper does not act on the flapper valve, and when the flapper valve rotates to a closed position, the damper acts on the flapper valve.

公开(公告)号：US10534236B2

公开(公告)日：2020-01-14

申请号：US15737115

申请日：2016-06-17

申请人： Satoshi Yamamoto ,  Daisuke Goto ,  Toshiya Sagisaka ,  Masato Shinoda ,  Mamiko Inoue ,  Fuminari Kaneko ,  Tohru Yashiro

发明人： Satoshi Yamamoto ,  Daisuke Goto ,  Toshiya Sagisaka ,  Masato Shinoda ,  Mamiko Inoue ,  Fuminari Kaneko ,  Tohru Yashiro

IPC分类号： G02F1/15 ,  C07D265/28 ,  G09F9/30 ,  C09K9/02 ,  C08F20/36 ,  C07D265/38 ,  G02F1/1516

摘要： Provided is an electrochromic compound represented by the following general formula (I) or (II) where R1 to R13 are each independently a hydrogen atom, a halogen atom, a monovalent organic group, or a polymerizable functional group, and at least one of the R1 to the R13 is a polymerizable functional group.

公开(公告)号：US09869918B2

公开(公告)日：2018-01-16

申请号：US14988992

申请日：2016-01-06

申请人： Takahiko Matsumoto ,  Keiichiroh Yutani ,  Hidekazu Yaginuma ,  Koh Fujimura ,  Fuminari Kaneko ,  Mamiko Inoue ,  Sukchan Kim ,  Satoshi Yamamoto ,  Tohru Yashiro

发明人： Takahiko Matsumoto ,  Keiichiroh Yutani ,  Hidekazu Yaginuma ,  Koh Fujimura ,  Fuminari Kaneko ,  Mamiko Inoue ,  Sukchan Kim ,  Satoshi Yamamoto ,  Tohru Yashiro

IPC分类号： G02F1/155 ,  G02F1/1343

CPC分类号： G02F1/155 ,  G02F1/13439 ,  G02F2001/1552

摘要： An electrochromic apparatus including a first support, a first electrode, a first transparent conductive layer, an electrochromic layer, a second support, a second electrode, a second transparent conductive layer, and an electrolyte layer is provided. The first and second supports have first and second surfaces, respectively, on each of which a plurality of grooves is formed. The grooves on the second surface are facing the grooves on the first surface. The first and second electrodes are disposed at each one of the plurality of grooves of the first and second supports, respectively. The first and second transparent conductive layers are in contact with the first and second surfaces, respectively. The electrochromic layer is in contact with the first transparent conductive layer. The electrolyte layer is between the electrochromic layer and the second transparent conductive layer.

公开(公告)号：US09312036B2

公开(公告)日：2016-04-12

申请号：US13315887

申请日：2011-12-09

申请人： Yuki Minato ,  Toshihiro Yasuda ,  Kunihiko Kinugasa ,  Hajime Mori ,  Satoshi Yamamoto ,  Jun Suzuki ,  Tadahiro Mitsuhashi

发明人： Yuki Minato ,  Toshihiro Yasuda ,  Kunihiko Kinugasa ,  Hajime Mori ,  Satoshi Yamamoto ,  Jun Suzuki ,  Tadahiro Mitsuhashi

IPC分类号： G21C15/25 ,  F04F5/54 ,  G21C17/017 ,  G21C19/14 ,  G21C17/10

CPC分类号： G21C15/25 ,  F04F5/54 ,  G21C17/017 ,  G21C17/10 ,  G21C19/14 ,  Y02E30/40 ,  Y10T29/49735

摘要： In a jet pump measurement pipe repair method according to the present embodiment, a breakage part of a measurement pipe horizontally fixed to a lower part of a jet pump provided in reactor water in a reactor pressure vessel is repaired. The method has: a step of cutting and removing the measurement pipe including the breakage part; a step of retaining a connection pipe for connecting the remaining measurement pipe on the jet pump by means of a clamp; and a step of connecting ends of the remaining measurement pipe by means of the connection pipe.

摘要翻译： 在根据本实施例的喷射泵测量管道修复方法中，修复水平固定到设置在反应堆压力容器中的反应器水中的喷射泵的下部的测量管的断裂部分。 该方法具有：切断除去包含断裂部的测量管的步骤; 保持用于通过夹具连接喷射泵上的剩余测量管的连接管的步骤; 以及通过连接管连接剩余测量管的端部的步骤。

公开(公告)号：US09291893B2

公开(公告)日：2016-03-22

申请号：US13281145

申请日：2011-10-25

申请人： Tatsuro Masuyama ,  Satoshi Yamamoto ,  Koji Ichikawa

发明人： Tatsuro Masuyama ,  Satoshi Yamamoto ,  Koji Ichikawa

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/20

CPC分类号： G03F7/0046 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/2041

摘要： A resist composition contains; a resin having a structural unit represented by the formula (aa) and a structural unit represented by the formula (ab); and an acid generator, wherein Raa1 represents a hydrogen atom and a methyl group; Aaa1 represents an optionally substituted C1 to C6 alkanediyl group etc.; Raa2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; Rab1 represents a hydrogen atom and a methyl group; Aab1 represents a single bond, an optionally substituted C1 to C6 alkanediyl group etc.; W1 represents an optionally substituted C4 to C24 alicyclic hydrocarbon group; n represents 1 or 2; Aab2 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; Rab2 in each occurrence independently represents a C1 to C12 fluorinated alkyl group.

摘要翻译： 抗蚀剂组合物含有 具有由式（aa）表示的结构单元的树脂和由式（ab）表示的结构单元; 和酸产生剂，其中Raa1表示氢原子和甲基; Aaa1表示可以具有取代基的C1〜C6烷二基等。 Raa2表示任选取代的C1至C18脂族烃基; Rab1表示氢原子和甲基; Aab1表示单键，任选取代的C 1至C 6烷二基等; W1表示任选取代的C4至C24脂环族烃基; n表示1或2; Aab2各自独立地表示任选取代的C 1至C 6脂族烃基; Rab2各自独立地表示C1〜C12氟化烷基。