摘要:
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit. The design structure includes an input register coupled to a data processing unit input and a test operation mode and functional operation mode. In the test mode operation, the register operates in a clocked mode such that, during the test operation mode, the register propagates data to the data processing unit in response to a clock signal. In the functional operation mode, the register operates in a data flush mode such that the register propagates data to the data processing unit in response to the data. The functional mode is enabled by a flush enable signal and the test mode is enabled by an opposite state of the flush enable signal.
摘要:
A method is provided for operating an interface between a first unit and a second unit supplying its data. The method includes switching control between LSSD_B and LSSD_C clocks and system clock (CLK) to provide a test mode of operation and a functional mode of operation to optimize setup and hold times depending on conditions under which the unit is operating. In the test mode, data is launched by the LSSD_C clock. In the functional mode, the data is launched by the system clock (CLK) to RAM. A method is also provided to determine which memory inputs should use a circuit that provides adequate setup and hold margins.
摘要:
A method is provided for operating an interface between a first unit and a second unit supplying its data. The method includes switching control between LSSD_B and LSSD_C clocks and system clock (CLK) to provide a test mode of operation and a functional mode of operation to optimize setup and hold times depending on conditions under which the unit is operating. In the test mode, data is launched by the LSSD_C clock. In the functional mode, the data is launched by the system clock (CLK) to RAM. A method is also provided to determine which memory inputs should use a circuit that provides adequate setup and hold margins.
摘要:
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit. The design structure includes an input register coupled to a data processing unit input and a test operation mode and functional operation mode. In the test mode operation, the register operates in a clocked mode such that, during the test operation mode, the register propagates data to the data processing unit in response to a clock signal. In the functional operation mode, the register operates in a data flush mode such that the register propagates data to the data processing unit in response to the data. The functional mode is enabled by a flush enable signal and the test mode is enabled by an opposite state of the flush enable signal.
摘要:
A method of assigning bits to redundant regions for variable bit redundancy region boundaries in a compliable memory such as a 1-port SRAM is provided. Methods include allocating bits between the redundant regions in nearly equal proportions while minimizing the amount of chip real estate consumed by the memory. Methods also includes allocating bits in equal portions between redundant regions while occupying slightly more memory chip real estate. Methods also allocate bits into redundant regions with a simplified procedure which may or may not allocate bits into the redundant regions in equal proportions. All of the methods allow the total number of memory bits in the complied memory to be re-defined while maintaining the same allocation characteristics for each method. Accordingly, the methods allow efficient use of redundant memory bits while also conserving chip real estate or offering simplified allocation steps.
摘要:
A method of implementing a compilable memory structure configured for supporting multiple test methodologies includes configuring a first plurality of multiplexers for selectively coupling at least one data input path and at least one address path between an external customer connection and a corresponding internal memory connection associated therewith. A second multiplexer is configured for selectively coupling an input of a test latch between a functional memory array connection and a memory logic connection, the memory logic connection coupled to the at least one data input path, with an output of the test latch defining a data out customer connection. Flush logic is configured to direct data from the memory logic connection to the data out customer connection during a test of logic associated with a customer chip, facilitating observation of the memory logic connection at the customer chip.
摘要:
Self-test architectures are provided to implement data column and row redundancy with a totally integrated self-test and repair capability in a Random Access Memory (RAM), either a Dynamic RAM (DRAM) or a Static Ram (SRAM), and are particularly applicable to compileable memories and to embedded RAM within microprocessor or logic chips. The invention uses two passes of self-test of a memory. The first pass of self-test determines the worst failing column, the column with the largest number of unique failing row addresses. After completion of the first pass of self-test, the spare column is allocated to replace the worst failing column. In the second pass of self-test, the BIST (Built In Self-Test) collects unique failing row addresses as it does today for memories with spare rows only. At the completion of the second pass of self-test, the spare rows are then allocated. Once the second pass of self-test is completed, the column and unique failing row addresses are transported to the e-fuse macros and permanently stored in the chip.
摘要:
A method of manufacturing a device having embedded memory including a plurality of memory cells. During manufacturing test, a first test stress is applied to selected cells of the plurality of memory cells with a built-in self test. At least one weak memory cell is identified. The at least one weak memory cell is repaired. A second test stress is applied to the selected cells and the repaired cells with the built-in self test.
摘要:
A memory structure configured for supporting multiple test methodologies includes a first plurality of multiplexers configured for selectively coupling at least one data input path and at least one address path between an external customer connection and a corresponding internal memory connection associated therewith. A second multiplexer is configured for selectively coupling an input of a test latch between a functional memory array connection and a memory logic connection coupled to the at least one data input path, with an output of the test latch defining a data out customer connection. Flush logic is further configured to direct data from the memory logic connection to the data out customer connection during a test of logic associated with a customer chip, thereby facilitating observation of the memory logic connection at the customer chip, wherein test elements of the memory structure comprise a scan architecture of a first type, and test elements of the customer chip comprise a scan architecture of a second type.
摘要:
Fuse macros of identical number of pages are serially arranged to form the same number of fusebay pages each having a length equal to the sum of the respective fuse macro page lengths. Each fuse macro has an enable latch configured to allow activation of one fuse macro at a time. A fusebay control device connected to a repair register may store data in and retrieve data from the fusebay. Next available fuse location is determined in programming mode so that data from a next repair pass may start where the last data ended.