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    Image sensors with stress adjusting layers
    4.
    发明授权
    Image sensors with stress adjusting layers 有权

    公开(公告)号：US11769780B2

    公开(公告)日：2023-09-26

    申请号：US16937306

    申请日：2020-07-23

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Feng-Chien Hsieh ,  Kuo-Cheng Lee ,  Ying-Hao Chen ,  Yun-Wei Cheng

    IPC分类号： H01L27/14 ,  H01L27/146

    CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14685

    摘要： An image sensor with stress adjusting layers and a method of fabrication the image sensor are disclosed. The image sensor includes a substrate with a front side surface and a back side surface opposite to the front side surface, an anti-reflective coating (ARC) layer disposed on the back side surface of the substrate, a dielectric layer disposed on the ARC layer, a metal layer disposed on the dielectric layer, and a stress adjusting layer disposed on the metal layer. The stress adjusting layer includes a silicon-rich oxide layer. The concentration profiles of silicon and oxygen atoms in the stress adjusting layer are non-overlapping and different from each other. The image sensor further includes oxide grid structure disposed on the stress adjusting layer.

    Increased optical path for long wavelength light by grating structure
    5.
    发明授权
    Increased optical path for long wavelength light by grating structure 有权

    公开(公告)号：US11581352B2

    公开(公告)日：2023-02-14

    申请号：US17156851

    申请日：2021-01-25

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee

    IPC分类号： H01L27/146

    摘要： Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.

    Low-Refractivity Grid Structure and Method Forming Same
    6.
    发明申请
    Low-Refractivity Grid Structure and Method Forming Same 有权

    公开(公告)号：US20220384509A1

    公开(公告)日：2022-12-01

    申请号：US17818635

    申请日：2022-08-09

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Kun-Huei Lin ,  Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Cheng Yuan Wang

    IPC分类号： H01L27/146

    摘要： A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.

    Image sensor and method of forming the same
    8.
    发明授权
    Image sensor and method of forming the same 有权

    公开(公告)号：US11171172B2

    公开(公告)日：2021-11-09

    申请号：US16512834

    申请日：2019-07-16

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen

    IPC分类号： H01L27/146

    摘要： A back side illumination (BSI) image sensor is provided. The BSI image sensor includes a semiconductor substrate, a first dielectric layer, a reflective element, a second dielectric layer and a color filter layer. The semiconductor substrate has a front side and a back side. The first dielectric layer is disposed on the front side of the semiconductor substrate. The reflective element is disposed on the first dielectric layer, in which the reflective element has an inner sidewall contacting the first dielectric layer, and the inner sidewall has a zigzag profile. The second dielectric layer is disposed on the first dielectric layer and the reflective element. The color filter layer is disposed on the backside of the semiconductor substrate.