公开(公告)号：US20180076379A1

公开(公告)日：2018-03-15

申请号：US15800873

申请日：2017-11-01

Applicant: TDK CORPORATION

Inventor： Katsuyuki KURACHI ,  Hitoshi SAKUMA ,  Yasuhiro AIDA ,  Kazuhiko MAEJIMA ,  Mayumi NAKAJIMA

IPC: H01L41/08 ,  H01L41/047

CPC classification number: H01L41/0815 ,  H01L41/0477

Abstract: A dielectric device has a first electrode film having a non-oriented or amorphous structure, a dielectric film provided on the first electrode film and having a preferentially oriented structure, and a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure.

公开(公告)号：US20160218271A1

公开(公告)日：2016-07-28

申请号：US15006395

申请日：2016-01-26

Applicant: TDK CORPORATION

Inventor： Hitoshi SAKUMA ,  Ryu OHTA

IPC: H01L41/047 ,  G11B5/48 ,  B41J2/14 ,  H01L41/09 ,  H01L41/113

CPC classification number: H01L41/0477 ,  B41J2/14233 ,  G11B5/483 ,  H01L41/0805 ,  H01L41/09 ,  H01L41/0973 ,  H01L41/1132 ,  H01L41/1873

Abstract: The present invention provides a piezoelectric thin film element having a pair of electrode layers and a piezoelectric thin film sandwiched between the pair of electrode layers, wherein the pair of electrode layers are composed of platinum (Pt), oxide particles are contained in at least one of the electrode layers, and the oxide particles are oxide particles of at least one element constituting the piezoelectric thin film or oxide particles of Pt.

Abstract translation: 本发明提供一种压电薄膜元件，其具有一对电极层和夹在该对电极层之间的压电薄膜，其中该一对电极层由铂（Pt）构成，氧化物颗粒包含在至少一个 的电极层，氧化物粒子是构成压电薄膜的至少一种元素或Pt的氧化物粒子的氧化物粒子。

公开(公告)号：US20140265723A1

公开(公告)日：2014-09-18

申请号：US13827126

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Yoshitomo TANAKA ,  Hitoshi SAKUMA ,  Katsuyuki KURACHI ,  Kazuhiko MAEJIMA

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Sr (strontium) is substituted on both of an A site and a B site and Mn (manganese) is substituted only on the A site. Accordingly, the piezoelectric element is provided to decrease a leak current of the piezoelectric element using the thin film of potassium sodium niobate, to increase a withstand voltage thereof and to improve piezoelectric characteristics thereof.

Abstract translation: 压电元件作为压电体层包含作为由通式ABO3表示的钙钛矿化合物的铌酸钾钠的薄膜，其中Sr（锶）在A位置和B位都被取代，Mn（ 锰）仅在A位置上被取代。 因此，提供了使用铌酸钾钠薄膜来降低压电元件的泄漏电流的压电元件，以提高其耐压并提高其压电特性。

公开(公告)号：US20200212286A1

公开(公告)日：2020-07-02

申请号：US16719009

申请日：2019-12-18

Applicant: TDK Corporation

Inventor： Kenta ISHII ,  Masaru NANAO ,  Hitoshi SAKUMA ,  Takao NOGUCHI

IPC: H01L41/047 ,  H01L41/08 ,  C23C16/48 ,  C23C16/40 ,  C23C16/06 ,  C23C14/08 ,  C23C14/34

Abstract: A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.

公开(公告)号：US20150364670A1

公开(公告)日：2015-12-17

申请号：US14304460

申请日：2014-06-13

Applicant: TDK CORPORATION

Inventor： Ryu OHTA ,  Hitoshi SAKUMA ,  Yuiko HIROSE

IPC: H01L41/18 ,  H01L41/047

CPC classification number: H01L41/0805 ,  H01L41/0973 ,  H01L41/1873 ,  H01L41/316

Abstract: A piezoelectric element exhibiting a small leakage current density and high reliability as compared with a KNN thin film piezoelectric element in the related art is provided. The piezoelectric element is characterized by including a lower electrode, a piezoelectric layer primarily made from potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, and an upper electrode, wherein the piezoelectric layer is present between the lower electrode and the upper electrode, and the piezoelectric layer has the value determined by dividing the maximum value of intensity of a diffraction peak, where the angle of 2θ is within the range of 21.1°≦2θ≦23.4° in the X-ray diffraction pattern (2θ/θ), by the intensity of a diffraction peak, where 2θ is within the range of 30.1°≦2θ≦33.3°, of 0.04 or less.

Abstract translation: 提供了一种与现有技术中的KNN薄膜压电元件相比表现出小的漏电流密度和高可靠性的压电元件。 压电元件的特征在于包括下电极，主要由铌酸钾钠制成的压电层，其为由通式ABO 3表示的钙钛矿型化合物和上电极，其中压电层存在于下电极 和上电极，并且压电层具有通过除以2θ的角度的衍射峰的强度的最大值所确定的值; 在X射线衍射图（2＆amp; Thetas;）中的21.1°＆nlE; 2＆amp; Thetas;＆amp; NlE; 23.4°的范围内，由衍射峰的强度，其中2＆ 在30.1°＆nlE; 2＆thetas;＆nlE; 33.3°，0.04以下的范围内。

公开(公告)号：US20150194592A1

公开(公告)日：2015-07-09

申请号：US13687785

申请日：2012-11-28

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Katsuyuki KURACHI ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

IPC: H01L41/08 ,  H01L41/18

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2202/03 ,  G01C19/5607 ,  G01L9/008 ,  G11B5/483 ,  G11B5/4873 ,  H01L41/0973 ,  H01L41/18 ,  H01L41/1873 ,  H01L41/316

Abstract: An object is to reduce the leakage current of a piezoelectric element including a potassium-sodium niobate thin film, enhance the reliability of the piezoelectric element and, in addition, enhance the withstand voltage by including a pair of electrodes and a piezoelectric layer sandwiched between the above-described pair of electrode layers, wherein the above-described piezoelectric layer is provided with at least one layer each of first piezoelectric layer which is a potassium-sodium niobate thin film substantially not containing Mn (manganese) and second piezoelectric layer which is a potassium-sodium niobate thin film containing Mn.

Abstract translation: 本发明的目的是减少包含铌酸钾钠薄膜的压电元件的泄漏电流，提高压电元件的可靠性，另外通过包括一对电极和夹在 上述一对电极层，其中上述压电层设置有至少一层第一压电层，第一压电层是基本不含Mn（锰）的铌酸钾钠薄膜和第二压电层，第二压电层为 含铌酸钾钠薄膜。

公开(公告)号：US20150109372A1

公开(公告)日：2015-04-23

申请号：US14058912

申请日：2013-10-21

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Ryu OHTA ,  Yoshitomo TANAKA ,  Hiroshi CHIHARA ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

IPC: H01L41/08 ,  G01L1/16 ,  B41J2/045 ,  H01L41/187

CPC classification number: H01L41/0805 ,  B41J2/045 ,  B41J2/14233 ,  B41J2202/03 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0973 ,  H01L41/1873 ,  H01L41/316

Abstract: The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Abstract translation: 可以增加作为致动器的位移或作为压电元件的传感器的灵敏度，并且另外可以通过提供作为钙钛矿型化合物的铌酸钾钠的薄膜来降低电力消耗， 通式ABO3作为压电层，其中铌酸钾钠的晶体结构的晶体取向作为整体压电层的面内四重对称，其中旋转对称的第一轴是压电层的厚度方向。

公开(公告)号：US20140084754A1

公开(公告)日：2014-03-27

申请号：US13624572

申请日：2012-09-21

Applicant: TDK CORPORATION

Inventor： Kazuhiko MAEJIMA ,  Katsuyuki KURACHI ,  Hitoshi SAKUMA ,  Yasuhiro AIDA ,  Yoshitomo TANAKA

IPC: H01L41/04 ,  H01L41/187

CPC classification number: H01L41/04 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric device according to the present invention includes a potassium sodium niobate-based piezoelectric thin film having an average crystal grain diameter of 60 nm or more and 90 nm or less, and a pair of electrode films configured to hold the piezoelectric thin film therebetween.

Abstract translation: 根据本发明的薄膜压电装置包括平均晶粒直径为60nm以上且90nm以下的磷酸铌酸钾系压电薄膜，以及配置成保持压电薄膜的一对电极薄膜 之间。

公开(公告)号：US20140145555A1

公开(公告)日：2014-05-29

申请号：US14047649

申请日：2013-10-07

Applicant: TDK CORPORATION

Inventor： Katsuyuki KURACHI ,  Yasuhiro AIDA ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

IPC: H01L41/18

CPC classification number: A61B5/02444 ,  B41J2/14233 ,  B41J2202/03 ,  G01C19/5621 ,  G01L9/008 ,  G11B5/483 ,  G11B5/5552 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/316

Abstract: There are provided a thin-film piezoelectric element including a piezoelectric thin film which has an alkali niobate-based perovskite structure represented by the composition formula (K1-w-xNawSrx)m(Nb1-yZry)O3 and which is preferentially oriented to (001), and a pair of electrode films that sandwich the piezoelectric thin film, a thin-film piezoelectric actuator, and a thin-film piezoelectric sensor each including the thin-film piezoelectric element.

Abstract translation: 提供了一种薄膜压电元件，其包括具有由组成式（K1-w-xNawSrx）m（Nb1-yZry）O3表示的碱铌酸酯基钙钛矿结构的压电薄膜，其优先取向为（001 ）和夹着压电薄膜的一对电极膜，薄膜压电致动器和薄膜压电传感器，每个薄膜压电传感器都包括薄膜压电元件。

公开(公告)号：US20140084749A1

公开(公告)日：2014-03-27

申请号：US13624573

申请日：2012-09-21

Applicant: TDK CORPORATION

Inventor： Hitoshi SAKUMA ,  Yasuhiro AIDA ,  Katsuyuki KURACHI ,  Kazuhiko MAEJIMA

IPC: H01L41/18

CPC classification number: H01L41/18 ,  G01C19/5621 ,  G01C19/5628 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric device according to the present invention includes a pair of electrode layers and a piezoelectric thin film interposed between the pair of electrode layers, wherein the piezoelectric thin film contains a rare gas element and has a content gradient of the rare gas element in the thickness direction of the piezoelectric thin film.

Abstract translation: 根据本发明的薄膜压电装置包括一对电极层和介于一对电极层之间的压电薄膜，其中压电薄膜含有稀有气体元素，并且具有稀有气体元素的含量梯度 压电薄膜的厚度方向。