公开(公告)号：US20140378295A1

公开(公告)日：2014-12-25

申请号：US14310212

申请日：2014-06-20

Applicant: TDK Corporation

Inventor： Toshihiko KANEKO ,  Saori TAKEDA ,  Yuki YAMASHITA ,  Junichi YAMAZAKI

IPC: C04B35/057 ,  C04B35/465 ,  C04B35/49

CPC classification number: C04B35/49 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/6562 ,  H01L28/40

Abstract: The present invention aims to provide an amorphous dielectric film and an electronic component in which the relative permittivity and the temperature coefficient of electrostatic capacitance can be maintained and the withstand voltage can be increased even if the dielectric film is further thinned. The amorphous dielectric film of the present invention is characterized in that it is a dielectric film composed of an amorphous composition with A-B—O as the main component, wherein A contains at least two elements selected from the group consisting of Ba, Ca and Sr, and B contains Zr. When the main component of the dielectric film is represented by (BaxCaySrz)α—B—O, x, y and z meet the conditions of 0≦x≦1, 0≦y≦1, 0≦z≦1, respectively, x+y+z=1 and at least any two of x, y and z are 0.1 or more. When A/B is represented by α, 0.5≦α≦1.5.

Abstract translation: 本发明的目的在于提供一种非晶介质膜和电子元件，其中可以保持相对介电常数和静电电容的温度系数，并且即使电介质膜进一步薄化也可以提高耐电压。 本发明的非晶质介电体膜的特征在于，由作为主成分的无定形组合物构成的电介质膜，其中，A含有选自Ba，Ca，Sr中的至少2种以上的元素， B含有Zr。 当电介质膜的主要成分由（BaxCaySrz）α-B-O表示时，x，y和z分别满足0＆nlE; x＆nlE; 1,0，nlE; y＆nlE; 1,0和nlE; z＆nlE; 1的条件x + y + z = 1，x，y和z中的至少任意两个为0.1以上。 当A / B由α表示时，0.5＆nlE;α＆nlE; 1.5。

公开(公告)号：US20160079002A1

公开(公告)日：2016-03-17

申请号：US14833614

申请日：2015-08-24

Applicant: TDK CORPORATION

Inventor： Saori TAKEDA ,  Masahito FURUKAWA ,  Masanori KOSUDA ,  Yuji SEZAI

IPC: H01G4/10 ,  H01G4/33

CPC classification number: H01G4/10 ,  H01G4/1227 ,  H01G4/20 ,  H01G4/33

Abstract: A dielectric film contains as a main component a dielectric composition represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0.001≦x≦0.400, 0.001≦y≦0.400, and 0.900≦z

Abstract translation: 电介质膜含有由通式（Ba1-xCax）z（Ti1-yZry）O3表示的电介质组合物，其中0.001和nlE; x和nlE; 0.400,0.001和n1E; y＆n1E; 0.400和0.900≤n1E; z <0.995 。 在电介质组合物的X射线衍射图中，电介质组合物的（001）面衍射峰位置2和钛之间的关系为0.00°＆lt; lE; 2＆het; c-2＆t; t <0.20° 通式和（100）平面衍射峰位置2和由通式表示的立方结构的c。

公开(公告)号：US20150274600A1

公开(公告)日：2015-10-01

申请号：US14661881

申请日：2015-03-18

Applicant: TDK CORPORATION

Inventor： Raitarou MASAOKA ,  Toshihiko KANEKO ,  Yuki YAMASHITA ,  Hiroki UCHIYAMA ,  Saori TAKEDA ,  Yuji SEZAI ,  Shirou OOTSUKI

IPC: C04B35/49 ,  C04B35/47 ,  C04B35/48

CPC classification number: C04B35/49 ,  C04B35/47 ,  C04B35/48 ,  C04B35/486 ,  C04B35/638 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/6562 ,  C04B2235/79 ,  C04B2235/80 ,  H01B3/12

Abstract: A dielectric composition contains major components that are an A-group containing major components that are at least two selected from the group consisting of Ba, Ca, and Sr and a B-group which contains a major component that is selected from Zr and Ti and which contains at least Zr. The dielectric composition contains an amorphous substance containing the A-group and the B-group and a crystalline substance containing the A-group and the B-group. In the dielectric composition, the inequality 0.5≦α≦1.5 holds, where α is the molar ratio of the A-group to the B-group.

Abstract translation: 电介质组合物包含主要成分，其为含有主要成分的主要成分，所述主成分为选自Ba，Ca和Sr中的至少两种，以及含有选自Zr和Ti的主要成分的B基，以及 其至少包含Zr。 电介质组合物含有含有A基团和B基团的无定形物质和含有A基团和B基团的结晶物质。 在电介质组成中，不等式为0.5＆nlE;α＆nlE; 1.5，其中α是A组与B基团的摩尔比。

公开(公告)号：US20150124373A1

公开(公告)日：2015-05-07

申请号：US14529623

申请日：2014-10-31

Applicant: TDK CORPORATION

Inventor： Saori TAKEDA ,  Toshihiko KANEKO ,  Yuki YAMASHITA ,  Yuji SEZAI

IPC: C04B35/453 ,  H01G4/12

CPC classification number: C04B35/453 ,  C04B35/16 ,  C04B2235/3298 ,  C04B2235/3427 ,  C04B2235/604 ,  C04B2235/6567 ,  C04B2235/80 ,  H01G4/085 ,  H01G4/1209 ,  H01G4/1272 ,  H01G4/33 ,  H01L28/55

Abstract: A dielectric composition containing a crystalline phase represented by a general formula of Bi12SiO20 and a crystalline phase represented by a general formula of Bi2SiO5 as the main components. The dielectric composition contains preferably 5 mass % to 99 mass % of the Bi2SiO5 crystalline phase, and more preferably 30 mass % to 99 mass %.

Abstract translation: 含有由通式Bi 12 SiO 20表示的结晶相和由通式Bi 2 SiO 5表示的结晶相作为主要成分的电介质组合物。 电介质组合物优选含有5质量％〜99质量％的Bi 2 SiO 5结晶相，更优选含有30质量％〜99质量％。

公开(公告)号：US20160329152A1

公开(公告)日：2016-11-10

申请号：US15134799

申请日：2016-04-21

Applicant: TDK Corporation

Inventor： Saori TAKEDA ,  Masahito FURUKAWA ,  Masanori KOSUDA ,  Shirou OOTSUKI ,  Yasunori HARADA

IPC: H01G4/33 ,  H01G4/12

CPC classification number: H01G4/33 ,  C04B35/4682 ,  C04B35/62218 ,  C04B35/6261 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3262 ,  C04B2235/3281 ,  C04B2235/3286 ,  C04B2235/604 ,  C04B2235/6567 ,  C04B2235/787 ,  C04B2235/788 ,  C04B2235/79 ,  C23C14/088 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/1245

Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0

Abstract translation: 电介质元件技术领域本发明涉及电介质元件，例如包括电介质膜的薄膜电容器。 电介质膜含有由通式（Ba1-xCax）z（Ti1-yZry）O3表示的主要成分，其中0

公开(公告)号：US20160027587A1

公开(公告)日：2016-01-28

申请号：US14738405

申请日：2015-06-12

Applicant: TDK CORPORATION

Inventor： Masahito FURUKAWA ,  Masanori KOSUDA ,  Saori TAKEDA

IPC: H01G4/30 ,  H01G4/10

CPC classification number: H01G4/10 ,  C04B35/49 ,  C04B35/495 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3251 ,  C04B2235/79 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/088 ,  C23C14/28 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/125 ,  C23C18/1254 ,  H01G4/1227

Abstract: The present invention provides a thin-film dielectric having a higher dielectric constant than usual ones and not requiring a special single crystal substrate, and also provides a large-capacity thin-film capacitor element using the thin-film dielectric.A BaTiO3-based perovskite solid solution and a KNbO3-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant. Also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention.

Abstract translation: 本发明提供一种具有比通常介电常数高的介电常数且不需要特殊的单晶衬底的薄膜电介质，并且还提供使用该薄膜电介质的大容量薄膜电容器元件。 交替地形成BaTiO 3系钙钛矿固溶体和KNbO 3系钙钛矿固溶体，形成界面处晶格常数连续变化的晶体结构梯度区域，由此发生晶格应变， 具有高介电常数的薄膜电介质。 此外，通过使用本发明的薄膜电介质可以制造大容量的薄膜电容器元件。