公开(公告)号：US20170077001A1

公开(公告)日：2017-03-16

申请号：US15266639

申请日：2016-09-15

Applicant: TEL Epion Inc.

Inventor： Soo Doo Chae ,  Noel Russell ,  Joshua LaRose ,  Nicholas Joy ,  Luis Fernandez ,  Allen J. Leith ,  Steven P. Caliendo ,  Yan Shao ,  Vincent Lagana-Gizzo

IPC: H01L21/66 ,  G05B19/406 ,  H01L21/263

CPC classification number: H01L22/20 ,  G05B19/406 ,  G05B2219/40624 ,  G05B2219/45031 ,  H01J37/304 ,  H01J2237/30483 ,  H01J2237/31 ,  H01L22/12

Abstract: A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

Abstract translation: 描述用于执行工件的位置特定处理的系统和方法。 该方法包括将微电子工件放置在光束处理系统中，为小于微电子工件的尺寸的光束扫描图案选择光束扫描尺寸，产生处理光束，以及通过照射来处理微电子工件的目标区域 沿着光束扫描图案的处理光束到被选择用于处理微电子工件的光束扫描尺寸内的目标区域上。

公开(公告)号：US20160322266A1

公开(公告)日：2016-11-03

申请号：US15142147

申请日：2016-04-29

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  Soo Doo Chae ,  Vincent Gizzo ,  Joshua LaRose ,  Nicholas Joy

IPC: H01L21/66 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L22/20 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L22/12

Abstract: A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.

Abstract translation: 描述了用于校正衬底上的表面轮廓的方法。 特别地，该方法包括接收具有由第一材料和第二材料构成的非均质层的基底，其中所述异质层具有暴露第一材料和第二材料的初始上表面，并且限定穿过基底的第一表面轮廓 。 该方法还包括设置异质层的目标表面轮廓，使用气体簇离子束（GCIB）蚀刻工艺选择性地去除第一材料的至少一部分，以及使第二材料下方的第一材料凹陷，然后选择性地 去除所述第二材料的至少一部分以实现暴露所述第一材料和所述第二材料的最终上表面，并且限定第二表面轮廓，其中所述第二表面轮廓在所述目标表面轮廓的预定公差内。

公开(公告)号：US10256095B2

公开(公告)日：2019-04-09

申请号：US15266639

申请日：2016-09-15

Applicant: TEL Epion Inc.

Inventor： Soo Doo Chae ,  Noel Russell ,  Joshua LaRose ,  Nicholas Joy ,  Luis Fernandez ,  Allen J. Leith ,  Steven P. Caliendo ,  Yan Shao ,  Vincent Lagana-Gizzo

IPC: H01L21/02 ,  H01L21/66 ,  G05B19/406 ,  H01L21/265 ,  H01L21/263 ,  H01J37/304

Abstract: A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

公开(公告)号：US09875947B2

公开(公告)日：2018-01-23

申请号：US15142147

申请日：2016-04-29

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  Soo Doo Chae ,  Vincent Gizzo ,  Joshua LaRose ,  Nicholas Joy

IPC: H01L21/66 ,  H01L21/311 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/3213

CPC classification number: H01L22/20 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L22/12

Abstract: A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.