SEMICONDUCTOR FORCE SENSORS
    1.
    发明申请

    公开(公告)号:US20220221353A1

    公开(公告)日:2022-07-14

    申请号:US17538782

    申请日:2021-11-30

    Abstract: A force sensor including a semiconductor die, and a die pad coupled to the semiconductor die, the semiconductor die configured to detect a force in the die pad. In addition, the force sensor includes a mold compound covering the semiconductor die and having an outer perimeter, a first side, and a second side opposite the first side, the outer perimeter extending between the first side and the second side, the die pad exposed out of the mold compound along the first side. Further, the force sensor includes a mounting frame engaged with the die pad along the second side of the mold compound, the mounting frame including multiple mounting pads extended outward in multiple directions from the outer perimeter.

    TRACKING TEMPERATURE COMPENSATION OF AN X/Y STRESS INDEPENDENT RESISTOR

    公开(公告)号:US20200227408A1

    公开(公告)日:2020-07-16

    申请号:US16428682

    申请日:2019-05-31

    Abstract: An integrated circuit comprises a semiconductor substrate having a surface. A lateral resistor is arranged in a first plane parallel to the surface of the substrate. A vertical reference resistor comprises a layer arranged in a second plane parallel to the surface of the substrate and deeper than the first plane. This layer is doped to promote current flow in the second plane. The vertical reference resistor further comprises a first trench and a second trench coupled between the layer and the surface of the substrate. The first and second trenches are arranged in a vertical direction orthogonal to the first and the second planes and are doped to impede current flow in the vertical direction. A cross-section of the first and second trenches is two-fold rotationally symmetric around the vertical direction, and the lateral resistor and the first and second trenches have the same temperature coefficient.

    METAL-LINED PACKAGE CAVITY FOR FLUID SENSORS

    公开(公告)号:US20250076093A1

    公开(公告)日:2025-03-06

    申请号:US18459056

    申请日:2023-08-31

    Abstract: In examples, a sensing device comprises a semiconductor die including a device side and a fluid sensor in the device side. The device comprises a metal ring forming an opening over the fluid sensor, the metal ring having a top surface, a bottom surface, and an inner surface extending between the top surface and the bottom surface, and the bottom surface being on the device side. At least a portion of the inner surface abuts the device side being plated with a noble metal. The device includes a mold compound covering the semiconductor die and a first portion of the metal ring, in which a second portion of the metal ring having the top surface protrudes out of the mold compound and provides at least one of a cartridge interface or a tube interface.

    SEMICONDUCTOR PACKAGES INCLUDING INTERFACE MEMBERS FOR WELDING

    公开(公告)号:US20220223488A1

    公开(公告)日:2022-07-14

    申请号:US17538820

    申请日:2021-11-30

    Abstract: An example semiconductor package includes a semiconductor die. In addition, the semiconductor package includes a mold compound having a first side, a second side opposite the first side, and an axis extending between the first side and the second side, the mold compound covering the semiconductor die. Further, the semiconductor package includes an interface member including a first portion and a second portion, the first portion is coupled to the second portion. The first portion is positioned along the first side, the second portion is positioned along the second side, and an engagement of a welding horn with the first portion is adapted to weld the second portion to a surface.

    TRACKING TEMPERATURE COMPENSATION OF AN X/Y STRESS INDEPENDENT RESISTOR

    公开(公告)号:US20220173095A1

    公开(公告)日:2022-06-02

    申请号:US17675066

    申请日:2022-02-18

    Abstract: An integrated circuit comprises a semiconductor substrate having a surface. A lateral resistor is arranged in a first plane parallel to the surface of the substrate. A vertical reference resistor comprises a layer arranged in a second plane parallel to the surface of the substrate and deeper than the first plane. This layer is doped to promote current flow in the second plane. The vertical reference resistor further comprises a first trench and a second trench coupled between the layer and the surface of the substrate. The first and second trenches are arranged in a vertical direction orthogonal to the first and the second planes and are doped to impede current flow in the vertical direction. A cross-section of the first and second trenches is two-fold rotationally symmetric around the vertical direction, and the lateral resistor and the first and second trenches have the same temperature coefficient.

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