公开(公告)号：US20150368802A1

公开(公告)日：2015-12-24

申请号：US14747001

申请日：2015-06-23

申请人： TOKYO ELECTRON LIMITED

发明人： Kazuki YAMADA ,  Masato MORISHIMA ,  Kenji OUCHI ,  Taiki KATOU

IPC分类号： C23C16/50 ,  C23C16/34 ,  C23C16/24 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/345 ,  C23C16/36 ,  C23C16/507 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L51/5256

摘要： There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.

摘要翻译： 提供一种形成密封膜以密封形成在基板上的器件的方法，包括：提供包含含硅气体和含卤素元素的气体的混合气体或包含含硅气体和 含有具有比氮的电负性强的官能团作为第一混合气体的气体进入处理容器; 产生处理容器内的第一混合气体的等离子体; 以及使用由所述等离子体激活的所述第一混合气体形成第一密封膜以覆盖所述装置。

公开(公告)号：US20190189437A1

公开(公告)日：2019-06-20

申请号：US16310520

申请日：2017-06-15

申请人： TOKYO ELECTRON LIMITED

发明人： Kenji OUCHI ,  Masato MORISHIMA

IPC分类号： H01L21/02 ,  C23C16/50 ,  C23C16/30 ,  C23C16/56 ,  C23C16/455 ,  H01L21/311 ,  H01J37/32

摘要： In one embodiment in which a technology which is capable of reducing voids that can occur when burying an insulating film into a trench while suppressing process complication, a method MT for processing a wafer W is provided. The wafer W has a groove 62 formed on the main surface 61 of the wafer W. The method MT includes: step S1 of accommodating the wafer W in a processing chamber 4 of a plasma processing apparatus 10; step S2 of starting supplying a first gas into the processing chamber 4; step S3 of starting supplying plasma generation high-frequency power into the processing chamber 4; and step S4 of starting intermittent supplying a second gas into the processing chamber 4 and starting supplying a third gas into the processing chamber 4 together, the first gas is a nitrogen-containing gas, the second gas is a gas that does not contain halogen, and the third gas is a gas that contains halogen.

公开(公告)号：US20190108984A1

公开(公告)日：2019-04-11

申请号：US16087249

申请日：2017-03-07

申请人： TOKYO ELECTRON LIMITED

发明人： Masato MORISHIMA ,  Katsuhiko IWABUCHI ,  Takashi FUSE ,  Madoka FUJIMOTO ,  Daisuke NISHIDE

IPC分类号： H01J37/32 ,  H05H1/46

摘要： A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.

公开(公告)号：US20140373783A1

公开(公告)日：2014-12-25

申请号：US14484598

申请日：2014-09-12

申请人： TOKYO ELECTRON LIMITED

发明人： Ikuo SAWADA ,  Masato MORISHIMA ,  Yukimasa SAITO

IPC分类号： C23C16/513

CPC分类号： C23C16/513 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/50 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32568 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film forming device forms a thin film on a substrate by reacting reaction gases in a process vessel. Electrode portions each oriented vertically are arranged to be spaced from each other in a horizontal direction. By applying high-frequency powers having different phases to adjacent electrode portions, a strong plasma generation space is formed above the substrate placed on a mounting table, while a weak plasma generation space is formed in the gap between the electrode portions and the substrate. A first reaction gas is supplied to the strong plasma generation space and a second reaction gas that forms the thin film by reacting with the active species of the first reaction gas is supplied to the weak plasma generation space. The reaction gases in the weak plasma generation space are discharged through exhaust channels.

摘要翻译： 成膜装置通过使处理容器中的反应气体反应而在基板上形成薄膜。 垂直取向的电极部分在水平方向上彼此间隔开。 通过对相邻电极部分施加具有不同相位的高频电力，在放置在安装台上的基板的上方形成强等离子体产生空间，同时在电极部分和基板之间的间隙中形成微弱的等离子体产生空间。 将第一反应气体供应到强等离子体产生空间，并且通过与第一反应气体的活性物质反应形成薄膜的第二反应气体被供给到弱等离子体产生空间。 弱等离子体产生空间中的反应气体通过排气通道排出。