公开(公告)号：US10096486B2

公开(公告)日：2018-10-09

申请号：US15264960

申请日：2016-09-14

Applicant: Toshiba Memory Corporation

Inventor： Shinsuke Muraki ,  Katsuhiro Sato ,  Hiroaki Yamada

IPC: H01L21/461 ,  H01L21/3213 ,  C23F1/16 ,  H01L21/67 ,  C23F1/14 ,  C23F1/18

Abstract: In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50° C. and 90° C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.

公开(公告)号：US10403524B2

公开(公告)日：2019-09-03

申请号：US15989887

申请日：2018-05-25

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Muraki ,  Hiroaki Yamada ,  Yuya Akeboshi ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/28 ,  C23F1/16 ,  C23F1/26

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US10008400B2

公开(公告)日：2018-06-26

申请号：US15449308

申请日：2017-03-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Muraki ,  Hiroaki Yamada ,  Yuya Akeboshi ,  Katsuhiro Sato

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/306 ,  H01L21/28 ,  C23F1/16 ,  H01L21/3213

CPC classification number: H01L21/67242 ,  C23F1/16 ,  C23F1/26 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67057 ,  H01L21/67075 ,  H01L21/67086

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US10910236B2

公开(公告)日：2021-02-02

申请号：US16294978

申请日：2019-03-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Muraki ,  Hiroaki Yamada ,  Yuji Hashimoto

IPC: H01L21/67 ,  H01L21/306

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a liquid supplier configured to supply liquid to a film on a substrate and cause a substance to dissolve from the film in the liquid. The apparatus further includes a first channel configured to recover the liquid supplied to the film and feed the liquid again to the liquid supplier, and a second channel configured to drain the liquid supplied to the film. The apparatus further includes a first switching module configured to switch a discharge destination of the liquid supplied to the film between the first and second channels, and a second switching module configured to switch between supplementing and not supplementing the first channel with new liquid. The apparatus further includes a controller configured to control the first and second switching modules to adjust concentration of the substance in the liquid to be supplied to the film.

公开(公告)号：US11171020B2

公开(公告)日：2021-11-09

申请号：US16548263

申请日：2019-08-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi Nakaoka ,  Katsuhiro Sato ,  Hiroaki Ashidate ,  Shinsuke Muraki ,  Yuji Hashimoto

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment tank, a container, a measuring instrument, and a controller. The treatment tank stores a chemical solution to treat a substrate. The container contains a liquid including ammonia from which a gas discharged from the treatment tank is gas-liquid separated. The measuring instrument measures an amount of the ammonia included in the liquid over time. The controller controls the treatment of the substrate based on the amount of the ammonia.