公开(公告)号：US10157756B2

公开(公告)日：2018-12-18

申请号：US14466391

申请日：2014-08-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hiroaki Yamada ,  Yoshihiro Ogawa ,  Takeshi Hizawa

IPC: H01L21/67 ,  B08B3/14 ,  C23F1/26 ,  H01L21/66 ,  H01L21/311

Abstract: A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

公开(公告)号：US10008400B2

公开(公告)日：2018-06-26

申请号：US15449308

申请日：2017-03-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Muraki ,  Hiroaki Yamada ,  Yuya Akeboshi ,  Katsuhiro Sato

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/306 ,  H01L21/28 ,  C23F1/16 ,  H01L21/3213

CPC classification number: H01L21/67242 ,  C23F1/16 ,  C23F1/26 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67057 ,  H01L21/67075 ,  H01L21/67086

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US10403524B2

公开(公告)日：2019-09-03

申请号：US15989887

申请日：2018-05-25

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Muraki ,  Hiroaki Yamada ,  Yuya Akeboshi ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/28 ,  C23F1/16 ,  C23F1/26

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US10014186B2

公开(公告)日：2018-07-03

申请号：US14989241

申请日：2016-01-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yuya Akeboshi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yasuhito Yoshimizu ,  Hiroaki Yamada

IPC: H01L21/302 ,  H01L21/3213 ,  H01L21/67 ,  C23F1/40

CPC classification number: H01L21/32134 ,  C23F1/40 ,  H01L21/67075 ,  H01L21/6708

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.

公开(公告)号：US10910236B2

公开(公告)日：2021-02-02

申请号：US16294978

申请日：2019-03-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke Muraki ,  Hiroaki Yamada ,  Yuji Hashimoto

IPC: H01L21/67 ,  H01L21/306

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a liquid supplier configured to supply liquid to a film on a substrate and cause a substance to dissolve from the film in the liquid. The apparatus further includes a first channel configured to recover the liquid supplied to the film and feed the liquid again to the liquid supplier, and a second channel configured to drain the liquid supplied to the film. The apparatus further includes a first switching module configured to switch a discharge destination of the liquid supplied to the film between the first and second channels, and a second switching module configured to switch between supplementing and not supplementing the first channel with new liquid. The apparatus further includes a controller configured to control the first and second switching modules to adjust concentration of the substance in the liquid to be supplied to the film.

公开(公告)号：US20180301349A1

公开(公告)日：2018-10-18

申请号：US16012866

申请日：2018-06-20

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yuya AKEBOSHI ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yasuhito Yoshimizu ,  Hiroaki Yamada

IPC: H01L21/3213 ,  H01L21/67 ,  C23F1/40

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.

公开(公告)号：US10529588B2

公开(公告)日：2020-01-07

申请号：US16012866

申请日：2018-06-20

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yuya Akeboshi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yasuhito Yoshimizu ,  Hiroaki Yamada

IPC: H01L21/3213 ,  H01L21/67 ,  C23F1/40

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.

公开(公告)号：US10096486B2

公开(公告)日：2018-10-09

申请号：US15264960

申请日：2016-09-14

Applicant: Toshiba Memory Corporation

Inventor： Shinsuke Muraki ,  Katsuhiro Sato ,  Hiroaki Yamada

IPC: H01L21/461 ,  H01L21/3213 ,  C23F1/16 ,  H01L21/67 ,  C23F1/14 ,  C23F1/18

Abstract: In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50° C. and 90° C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.