公开(公告)号：US12172263B2

公开(公告)日：2024-12-24

申请号：US18312753

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Michael Yen ,  Kao-Feng Liao ,  Hsin-Ying Ho ,  Chun-Wen Hsiao ,  Sheng-Chao Chuang ,  Ting-Hsun Chang ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Peng-Chung Jangjian ,  Ji James Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/26 ,  B24B37/005 ,  B24B37/04 ,  B24B37/24

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

公开(公告)号：US12158332B2

公开(公告)日：2024-12-03

申请号：US18361754

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Hung Chen ,  Kei-Wei Chen ,  Te-Ming Kung

IPC: G01B11/06 ,  G01Q60/24

Abstract: A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.

公开(公告)号：US20220382947A1

公开(公告)日：2022-12-01

申请号：US17814991

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Shuo Liu ,  Chih-Chun Hsia ,  Hsin-Ting Chou ,  Kuanhua Su ,  William Weilun Hong ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: G06F30/392 ,  G06T7/00

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

公开(公告)号：US12293917B2

公开(公告)日：2025-05-06

申请号：US17355981

申请日：2021-06-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Te-Chien Hou ,  Po-Chin Nien ,  Chih Hung Chen ,  Ying-Tsung Chen ,  Kei-Wei Chen

IPC: H01L21/321 ,  B24B37/34 ,  B24B53/017 ,  H01L21/306

Abstract: A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.

公开(公告)号：US20230364733A1

公开(公告)日：2023-11-16

申请号：US18359396

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Hsun Chang ,  Hung Yen ,  Chi-Hsiang Shen ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Tsung Hsien Chang ,  Ji Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/16 ,  B24B57/02 ,  B24B37/015 ,  H01L21/306

CPC classification number: B24B37/16 ,  B24B57/02 ,  B24B37/015 ,  H01L21/30625

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

公开(公告)号：US20230271298A1

公开(公告)日：2023-08-31

申请号：US18312753

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Michael Yen ,  Kao-Feng Liao ,  Hsin-Ying Ho ,  Chun-Wen Hsiao ,  Sheng-Chao Chuang ,  Ting-Hsun Chang ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Peng-Chung Jangjian ,  Ji James Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/26 ,  B24B37/005 ,  B24B37/24 ,  B24B37/04

CPC classification number: B24B37/26 ,  B24B37/005 ,  B24B37/24 ,  B24B37/042

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

公开(公告)号：US11631618B2

公开(公告)日：2023-04-18

申请号：US17143032

申请日：2021-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Hung Chen ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC: H01L21/66 ,  H01L21/321 ,  B24B37/013 ,  G01B7/06

Abstract: Various embodiments provide a thickness sensor and method for measuring a thickness of discrete conductive features, such as conductive lines and plugs. In one embodiment, the thickness sensor generates an Eddy current in a plurality of discrete conductive features, and measures the generated Eddy current generated in the discrete conductive features. The thickness sensor has a small sensor spot size, and amplifies peaks and valleys of the measured Eddy current. The thickness sensor determines a thickness of the discrete conductive features based on a difference between a minimum amplitude value and a maximum amplitude value of the measured Eddy current.

公开(公告)号：US20220012400A1

公开(公告)日：2022-01-13

申请号：US16926026

申请日：2020-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Shuo Liu ,  Chih-Chun Hsia ,  Hsin Ting Chou ,  Kuanhua Su ,  William Weilun Hong ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: G06F30/392 ,  G06T7/00

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

公开(公告)号：US20210036129A1

公开(公告)日：2021-02-04

申请号：US17068578

申请日：2020-10-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Hung Chen ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC: H01L29/66 ,  H01L29/40 ,  H01L21/67 ,  H01L21/321 ,  B24B37/00 ,  B24B37/10 ,  B24B7/22

Abstract: In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.

公开(公告)号：US12229487B2

公开(公告)日：2025-02-18

申请号：US18308916

申请日：2023-04-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Shuo Liu ,  Chih-Chun Hsia ,  Hsin-Ting Chou ,  Kuanhua Su ,  William Weilun Hong ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: G06F30/392 ,  G06F111/20 ,  G06T7/00

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.