公开(公告)号：US10804268B2

公开(公告)日：2020-10-13

申请号：US16391152

申请日：2019-04-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Li Chiang ,  Szu-Wei Huang ,  Chih-Chieh Yeh ,  Yee-Chia Yeo

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/78 ,  H01L23/528 ,  H01L21/8238 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, a first source/drain structure, a vertical channel layer, a gate structure, a second source/drain structure and a body epitaxial layer. The first source/drain structure is over the substrate. The vertical channel layer is over the first source/drain structure. The gate structure is on a first sidewall of the vertical channel layer. The second source/drain structure is over the vertical channel layer. The body epitaxial layer is on a second sidewall of the vertical channel layer. The body epitaxial layer and the vertical channel layer are of opposite conductivity types, and the body epitaxial layer is separated from the gate structure.

公开(公告)号：US20190341482A1

公开(公告)日：2019-11-07

申请号：US16512016

申请日：2019-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hsien Wu ,  Chih-Chieh Yeh ,  Yee-Chia Yeo

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/768 ,  H01L29/10 ,  H01L29/786 ,  H01L29/04 ,  H01L29/423 ,  H01L21/8238

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a stacked wire structure formed over the substrate. The semiconductor device structure also includes a gate structure formed over a middle portion of the stacked wire structure and a source/drain (S/D) structure formed at two opposite sides of the stacked wire structure. The S/D structure includes a top surface, a sidewall surface, and a rounded corner between the top surface and the sidewall surface.

公开(公告)号：US10374059B2

公开(公告)日：2019-08-06

申请号：US15692124

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Wei-Sheng Yun ,  Shao-Ming Yu ,  Tsung-Lin Lee ,  Chih-Chieh Yeh

IPC: H01L29/66 ,  H01L21/762 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes providing a substrate having a base portion and a fin portion over the base portion. The fin portion has a channel region and a source/drain region. The method also includes forming a stack structure over the fin portion. The stack structure includes first and second semiconductor layers. The method also includes forming a source/drain portion in the stack structure at the source/drain region, and removing a portion of the second semiconductor layer in the channel region in an etching process. The remaining portion of the first semiconductor layer in the channel region forms a nanowire. The method further includes forming a gate dielectric layer surrounding the nanowire, forming a high-k dielectric layer surrounding the gate dielectric layer, and forming a gate electrode surrounding the high-k dielectric layer.

公开(公告)号：US10170374B2

公开(公告)日：2019-01-01

申请号：US15632449

申请日：2017-06-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： I-Sheng Chen ,  Tzu-Chiang Chen ,  Cheng-Hsien Wu ,  Chih-Chieh Yeh ,  Chih-Sheng Chang

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02

Abstract: A semiconductor device includes at least one n-channel, at least one p-channel, at least one first high-k dielectric sheath, at least one second high-k dielectric sheath, a first metal gate electrode and a second metal gate electrode. The first high-k dielectric sheath surrounds the n-channel. The second high-k dielectric sheath surrounds the p-channel. The first high-k dielectric sheath and the second high-k dielectric sheath comprise different high-k dielectric materials. The first metal gate electrode surrounds the first high-k dielectric sheath. The second metal gate electrode surrounds the second high-k dielectric sheath.

公开(公告)号：US10991811B2

公开(公告)日：2021-04-27

申请号：US16528768

申请日：2019-08-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Cheng ,  Wei-Sheng Yun ,  Shao-Ming Yu ,  Tsung-Lin Lee ,  Chih-Chieh Yeh

IPC: H01L29/66 ,  H01L21/762 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/08 ,  H01L27/06 ,  H01L27/092 ,  H01L21/822 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/40 ,  H01L29/165

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a plurality of nanowires over an input-output region, and a protective layer surrounding the nanowires. The protective layer is made of silicon, silicon germanium, silicon oxide, silicon nitride, silicon sulfide, or a combination thereof. The semiconductor device structure also includes a high-k dielectric layer surrounding the protective layer, and a gate electrode surrounding the high-k dielectric layer. The semiconductor device structure further includes a source/drain portion adjacent to the gate electrode, and an interlayer dielectric layer over the source/drain portion.

公开(公告)号：US10269934B2

公开(公告)日：2019-04-23

申请号：US15590243

申请日：2017-05-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： I-Sheng Chen ,  Cheng-Hsien Wu ,  Chih-Chieh Yeh

IPC: H01L29/66 ,  H01L29/10 ,  H01L27/088 ,  H01L21/285

Abstract: A semiconductor device includes a substrate, at least one first semiconductor layer, and at least one second semiconductor layer. The at least one first semiconductor layer is disposed on the substrate, and the at least one second semiconductor layer is disposed on the at least one first semiconductor layer. The at least one first semiconductor layer includes a first doping portion, a second doping portion, a channel, and a semiconductor film. The second doping portion is adjacent to the first doping portion. The channel is disposed between the first doping portion and the second doping portion, and disposed with the substrate in parallel. The semiconductor film is disposed around the channel.

公开(公告)号：US10269800B2

公开(公告)日：2019-04-23

申请号：US15605983

申请日：2017-05-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Li Chiang ,  Szu-Wei Huang ,  Chih-Chieh Yeh ,  Yee-Chia Yeo

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/78 ,  H01L23/528 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate, a well on the substrate and an FFT on the well. The FET includes a first source/drain, a vertical channel layer, a gate structure, a second source/drain and a body structure. The first source/drain is on the well. The vertical channel layer extends form the first source/drain. The first gate structure surrounds a first portion of sidewalls of the vertical channel layer. The second source/drain is on the vertical channel layer. The body structure is in physical contact with the vertical channel layer. The body structure and the vertical channel layer constitute a bipolar device.

公开(公告)号：US10204985B2

公开(公告)日：2019-02-12

申请号：US14942639

申请日：2015-11-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Ying Lee ,  Chih-Chieh Yeh ,  Chen-Feng Hsu

IPC: H01L29/06 ,  H01L21/306 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first semiconductor layer and a second semiconductor layer vertically stacked over a semiconductor substrate. The first semiconductor layer and the second semiconductor layer include different materials. The semiconductor device structure also includes a gate stack covering a first portion of the first semiconductor layer. The semiconductor device structure further includes a spacer element over a sidewall of the gate stack. The spacer element covers the second semiconductor layer and a second portion of the first semiconductor layer. The thickness of the second semiconductor layer is different from the thickness of the second portion.

公开(公告)号：US10134640B1

公开(公告)日：2018-11-20

申请号：US15652628

申请日：2017-07-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Li Chiang ,  I-Sheng Chen ,  Tzu-Chiang Chen ,  Chao-Ching Cheng ,  Chih-Chieh Yeh ,  Yee-Chia Yeo

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/78 ,  H01L29/786 ,  H01L27/092 ,  H01L21/02

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes a gate structure over the fin portion and extending across the fin portion. The semiconductor device structure includes a first semiconductor wire over the fin portion and passing through the gate structure. The semiconductor device structure includes a second semiconductor wire over the first semiconductor wire and passing through the gate structure. The gate structure surrounds the second semiconductor wire and separates the first semiconductor wire from the second semiconductor wire. The first semiconductor wire and the second semiconductor wire are made of different materials.

公开(公告)号：US11742352B2

公开(公告)日：2023-08-29

申请号：US17826154

申请日：2022-05-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Li Chiang ,  Szu-Wei Huang ,  Chih-Chieh Yeh ,  Yee-Chia Yeo

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/78 ,  H01L23/528 ,  H01L21/8238 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L27/0922 ,  H01L21/823493 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823871 ,  H01L21/823885 ,  H01L21/823892 ,  H01L23/5283 ,  H01L27/092 ,  H01L27/0928 ,  H01L29/0649 ,  H01L29/66666 ,  H01L29/7827

Abstract: A semiconductor device includes first and second source/drain structures, a channel layer, a gate structure, and an epitaxial layer. The channel layer is above the first source/drain structure. The second source/drain structure is above the channel layer. The gate structure is on a first side surface of the channel layer. The epitaxial layer forms a P-N junction with a second side surface of the channel layer.