公开(公告)号：US20120218802A1

公开(公告)日：2012-08-30

申请号：US13403398

申请日：2012-02-23

申请人： Takao MARUKAME ,  Tomoaki INOKUCHI ,  Hideyuki SUGIYAMA ,  Mizue ISHIKAWA ,  Yoshiaki SAITO ,  Atsuhiro KINOSHITA ,  Kosuke TATSUMURA

发明人： Takao MARUKAME ,  Tomoaki INOKUCHI ,  Hideyuki SUGIYAMA ,  Mizue ISHIKAWA ,  Yoshiaki SAITO ,  Atsuhiro KINOSHITA ,  Kosuke TATSUMURA

IPC分类号： G11C15/02

CPC分类号： G11C15/02 ,  G11C11/161 ,  G11C15/046 ,  H01L27/228

摘要： One embodiment provides a content addressable memory, including: a pair of spin MOSFETs including: a first spin MOSFET whose magnetization state is set in accordance with stored data; and a second spin MOSFET whose magnetization state is set in accordance with the stored data, the second spin MOSFET being connected in parallel with the first spin MOSFET; a first wiring configured to apply a gate voltage so that any one of the first spin MOSFET and the second spin MOSFET becomes electrically conductive in accordance with search data; and a second wiring configured to apply a current to both of the first spin MOSFET and the second spin MOSFET.

摘要翻译： 一个实施例提供一种内容可寻址存储器，包括：一对自旋MOSFET，其包括：第一自旋MOSFET，其磁化状态根据存储的数据设置; 以及第二自旋MOSFET，其磁化状态根据存储的数据设定，第二自旋MOSFET与第一自旋MOSFET并联连接; 第一布线，被配置为施加栅极电压，使得第一自旋MOSFET和第二自旋MOSFET中的任何一个根据搜索数据变为导电; 以及配置为向第一自旋MOSFET和第二自旋MOSFET两者施加电流的第二布线。

公开(公告)号：US20140035618A1

公开(公告)日：2014-02-06

申请号：US13613701

申请日：2012-09-13

申请人： Kosuke TATSUMURA ,  Masato ODA ,  Atsuhiro KINOSHITA ,  Koichiro ZAITSU ,  Mari MATSUMOTO ,  Shinichi YASUDA

发明人： Kosuke TATSUMURA ,  Masato ODA ,  Atsuhiro KINOSHITA ,  Koichiro ZAITSU ,  Mari MATSUMOTO ,  Shinichi YASUDA

IPC分类号： H03K19/177

CPC分类号： H03K19/17728 ,  G11C15/04 ,  G11C15/046 ,  H03K19/17712

摘要： A circuit according to embodiments includes: a plurality of bit-string comparators each of which includes a plurality of single-bit comparators each of which includes first and second input terminals, first and second match-determination terminals, and a memory storing data and inverted data in a pair, the first input terminal being connected to a respective search line, the second input terminal being connected to an inverted search line being paired with the respective search line, and a matching line connecting the first and second match-determination terminals of the single-bit comparators; a pre-charge transistor of which source is connected to a supply voltage line; a common matching line connected to a drain of the pre-charge transistor and the matching lines of the bit-string comparators; and an output inverter of which input is connected to the common matching line.

摘要翻译： 根据实施例的电路包括：多个比特串比较器，每个比特串包括多个单比特比较器，每个单比特比较器包括第一和第二输入端，第一和第二匹配确定终端，以及存储数据并反转的存储器 成对的数据，第一输入端子连接到相应的搜索线，第二输入端子连接到与相应搜索线配对的反向搜索线，以及匹配线，连接第一和第二匹配确定端子 单比特比较器; 其源极连接到电源电压线的预充电晶体管; 连接到预充电晶体管的漏极和位串比较器的匹配线的公共匹配线; 以及输入反相器，其输入连接到公共匹配线。

公开(公告)号：US20130077397A1

公开(公告)日：2013-03-28

申请号：US13480853

申请日：2012-05-25

申请人： Takahiro KURITA ,  Yoshifumi NISHI ,  Kosuke TATSUMURA ,  Atsuhiro KINOSHITA

发明人： Takahiro KURITA ,  Yoshifumi NISHI ,  Kosuke TATSUMURA ,  Atsuhiro KINOSHITA

IPC分类号： H01L27/105 ,  G11C11/40

CPC分类号： H01L21/28291 ,  G11C7/02 ,  G11C11/403 ,  H01L21/28282 ,  H01L27/108 ,  H01L27/10873 ,  H01L29/4234 ,  H01L29/516

摘要： A semiconductor device according to an embodiment includes: a first transistor including a gate connected to a first interconnection, a first source, and a first drain, one of the first source and the first drain being connected to a second interconnection; and a second transistor including a gate structure, a second source, and a second drain, one of the second source and second drain being connected to a third interconnection and the other of the second source and second drain being connected to a fourth interconnection. The gate structure includes a gate insulation film, a gate electrode, and a threshold-modulating film provided between the gate insulation film and the gate electrode to modulate a threshold voltage, the other of the first source and first drain of the first transistor is connected to the gate electrode.

摘要翻译： 根据实施例的半导体器件包括：第一晶体管，包括连接到第一互连的栅极，第一源极和第一漏极，第一源极和第一漏极中的一个连接到第二互连; 以及第二晶体管，其包括栅极结构，第二源极和第二漏极，所述第二源极和第二漏极中的一个连接到第三互连，并且所述第二源极和第二漏极中的另一个连接到第四互连。 栅极结构包括栅极绝缘膜，栅极电极和设置在栅极绝缘膜和栅电极之间以调节阈值电压的阈值调制膜，第一晶体管的第一源极和第一漏极中的另一个被连接 到栅电极。

公开(公告)号：US20150014748A1

公开(公告)日：2015-01-15

申请号：US14500349

申请日：2014-09-29

申请人： Koichiro ZAITSU ,  Kosuke TATSUMURA ,  Mari MATSUMOTO

发明人： Koichiro ZAITSU ,  Kosuke TATSUMURA ,  Mari MATSUMOTO

IPC分类号： H01L27/118

CPC分类号： H01L27/11803 ,  G11C16/04 ,  G11C16/0441 ,  G11C16/10 ,  H01L21/26586 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0207 ,  H01L27/11526 ,  H01L27/11534 ,  H01L27/11573 ,  H01L29/6653 ,  H01L29/66537 ,  H01L29/6659 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792 ,  H03K19/17764 ,  H03K19/17792

摘要： According to one embodiment, a semiconductor integrated circuit includes nonvolatile memory areas, each includes a first nonvolatile memory transistor, a second nonvolatile memory transistor and an output line, the first nonvolatile memory transistor includes a first source diffusion region, a first drain diffusion region and a first control gate electrode, the second nonvolatile memory transistor includes a second source diffusion region, a second drain diffusion region and a second control gate electrode, the output line connected the first drain diffusion region and the second drain diffusion region, and logic transistor areas, each includes a logic transistor, the logic transistor includes a third source diffusion region, a third drain diffusion region and a first gate electrode.

摘要翻译： 根据一个实施例，半导体集成电路包括非易失性存储区域，每个包括第一非易失性存储晶体管，第二非易失性存储晶体管和输出线，第一非易失性存储晶体管包括第一源极扩散区，第一漏极扩散区和 第一控制栅极，第二非易失性存储晶体管包括第二源极扩散区，第二漏极扩散区和第二控制栅电极，连接第一漏极扩散区域和第二漏极扩散区域的输出线以及逻辑晶体管区域 每个都包括逻辑晶体管，逻辑晶体管包括第三源极扩散区，第三漏极扩散区和第一栅电极。

公开(公告)号：US20130258782A1

公开(公告)日：2013-10-03

申请号：US13603666

申请日：2012-09-05

申请人： Kosuke TATSUMURA ,  Masato ODA ,  Koichiro ZAITSU ,  Atsushi KAWASUMI ,  Mari MATSUMOTO ,  Shinichi YASUDA

发明人： Kosuke TATSUMURA ,  Masato ODA ,  Koichiro ZAITSU ,  Atsushi KAWASUMI ,  Mari MATSUMOTO ,  Shinichi YASUDA

IPC分类号： G11C16/06

CPC分类号： G11C16/06 ,  G11C7/06 ,  G11C16/26

摘要： According to one embodiment, a configuration memory includes first and second data lines, a first memory string which comprises at least first and second nonvolatile memory transistors which are connected in series between a common node and the first data line, a second memory string which comprises at least third and fourth nonvolatile memory transistors which are connected in series between the common node and the second data line, and a flip-flop circuit which comprises a first data holding node connected to the common node and a second data holding node connected to a configuration data output node.

摘要翻译： 根据一个实施例，配置存储器包括第一和第二数据线，第一存储器串，其包括串联连接在公共节点和第一数据线之间的至少第一和第二非易失性存储器晶体管，第二存储器串包括 在公共节点和第二数据线之间串联连接的至少第三和第四非易失性存储器晶体管，以及包括连接到公共节点的第一数据保持节点和连接到公共节点的第二数据保持节点的触发器电路 配置数据输出节点。

公开(公告)号：US20130134499A1

公开(公告)日：2013-05-30

申请号：US13469867

申请日：2012-05-11

申请人： Kosuke TATSUMURA ,  Kiwamu Sakuma ,  Koichiro Zaitsu ,  Mari Matsumoto

发明人： Kosuke TATSUMURA ,  Kiwamu Sakuma ,  Koichiro Zaitsu ,  Mari Matsumoto

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  G11C16/0441 ,  H01L27/11568 ,  H01L29/66833

摘要： A nonvolatile programmable switch according to an embodiment includes: a first nonvolatile memory transistor including a first to third terminals connected to a first to third interconnects respectively; a second nonvolatile memory transistor including a fourth terminal connected to a fourth interconnect, a fifth terminal connected to the second interconnect, and a sixth terminal connected to the third interconnect, the first and second nonvolatile memory transistors having the same conductivity type; and a pass transistor having a gate electrode connected to the second interconnect. When the first and fourth interconnects are connected to a first power supply while the third interconnect is connected to a second power supply having a higher voltage than that of the first power supply, a threshold voltage of the first nonvolatile memory transistor increases, and a threshold voltage of the second nonvolatile memory transistor decreases.

摘要翻译： 根据实施例的非易失性可编程开关包括：第一非易失性存储晶体管，包括分别连接到第一至第三互连的第一至第三端子; 第二非易失性存储晶体管，包括连接到第四互连的第四端子，连接到第二互连的第五端子和连接到第三互连件的第六端子，具有相同导电类型的第一和第二非易失性存储器晶体管; 以及具有连接到第二互连的栅电极的传输晶体管。 当第一和第四互连连接到第一电源，而第三互连连接到具有比第一电源的电压更高的电压的第二电源时，第一非易失性存储晶体管的阈值电压增加，阈值 第二非易失性存储晶体管的电压降低。