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1.发明授权Semiconductor optical receiver device, optical receiver module, and method for manufacturing semiconductor optical receiver device 有权半导体光接收装置，光接收模块以及半导体光接收装置的制造方法公开(公告)号：US07875905B2
公开(公告)日：2011-01-25
申请号：US12081385
申请日：2008-04-15
IPC分类号： H01L31/107
CPC分类号： H01L31/107
摘要： A semiconductor optical receiver device is provided, which a mesa comprising a plurality of semiconductor crystal layers formed on a semiconductor substrate including a pn junction having a first conductive semiconductor crystal layer and a second conductive semiconductor crystal layer and including a first contact layer on the semiconductor substrate, a plurality of electrodes to apply electric field to the pn junction are coupled on the semiconductor substrate, a second contact layer is formed on a buried layer in which the mesa is buried, and the electric field is applied to the pn junction through the first and second contact layers.
摘要翻译： 提供了一种半导体光接收器件，其包括形成在包括具有第一导电半导体晶体层和第二导电半导体晶体层的pn结的半导体衬底上的多个半导体晶体层的台面，并且在半导体上包括第一接触层 衬底，多个用于对pn结施加电场的电极耦合在半导体衬底上，第二接触层形成在掩埋层的埋层中，并且电场通过 第一和第二接触层。
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2.发明申请Semiconductor optical receiver device, optical receiver module, and method for manufacturing semiconductor optical receiver device 有权半导体光接收装置，光接收模块以及半导体光接收装置的制造方法公开(公告)号：US20080265357A1
公开(公告)日：2008-10-30
申请号：US12081385
申请日：2008-04-15
CPC分类号： H01L31/107
摘要： A semiconductor optical receiver device is provided, which a mesa comprising a plurality of semiconductor crystal layers formed on a semiconductor substrate including a pn junction having a first conductive semiconductor crystal layer and a second conductive semiconductor crystal layer and including a first contact layer on the semiconductor substrate, a plurality of electrodes to apply electric field to the pn junction are coupled on the semiconductor substrate, a second contact layer is formed on a buried layer in which the mesa is buried, and the electric field is applied to the pn junction through the first and second contact layers.
摘要翻译： 提供了一种半导体光接收器件，其包括形成在包括具有第一导电半导体晶体层和第二导电半导体晶体层的pn结的半导体衬底上的多个半导体晶体层的台面，并且在半导体上包括第一接触层 衬底，多个用于对pn结施加电场的电极耦合在半导体衬底上，第二接触层形成在其中掩埋台面的掩埋层上，并且电场通过 第一和第二接触层。
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公开(公告)号：US20070249109A1
公开(公告)日：2007-10-25
申请号：US11785926
申请日：2007-04-20
IPC分类号： H01L33/00 , H01L21/338
CPC分类号： H01L31/107 , B82Y20/00 , H01L31/03046 , H01L31/105 , H01S5/02276 , H01S5/0421 , H01S5/0425 , H01S5/18308 , H01S5/18369 , H01S5/3095 , H01S5/34306 , H01S2301/176 , Y02E10/544
摘要： A high resistance re-grown layer is disposed around an optical device having a mesa structure. Thus, a mesa portion having a plane direction that appears in etching of a circular main structure is coated with the re-grown layer. Because of this coating, it is possible to reduce the capacitance in this portion as well as to avoid the risk of disconnection with respect to all the wiring directions. The thickness of the re-grown layer can be set to be equal to the thickness of the main structural part. Particularly, when a conductive substrate is used, a substantial reduction effect of parasitic capacitance can be expected from a combination with plural dielectric films.
摘要翻译： 高电阻再生层设置在具有台面结构的光学器件周围。 因此，具有在圆形主结构的蚀刻中出现的平面方向的台面部分被覆有再生长层。 由于这种涂层，可以减小该部分的电容，并且避免相对于所有布线方向断开的危险。 再生长层的厚度可以设定为等于主要结构部件的厚度。 特别地，当使用导电性基板时，可以期待与多个电介质膜的组合的寄生电容的显着的降低效果。
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4.发明授权Optical isolator, optical circuit, and rare-earth-doped fiber optical amplifier 失效光隔离器，光电路和稀土掺杂光纤放大器
公开(公告)号：US5283846A
公开(公告)日：1994-02-01
申请号：US898556
申请日：1992-06-15
申请人： Takashi Toyonaka , Shinji Tsuji , Makoto Haneda , Yuichi Ono
发明人： Takashi Toyonaka , Shinji Tsuji , Makoto Haneda , Yuichi Ono
IPC分类号： G02B27/28 , G02B6/42 , G02F1/09 , G02F1/35 , H01S3/06 , H01S3/067 , H01S3/07 , H01S3/10 , G02B6/32
CPC分类号： H01S3/06754 , G02B6/4208 , G02F1/093 , G02F2203/06 , Y10S372/703
摘要： In a polarization dependency type optical isolator comprising wedgelike polarizing prisms 3 and 5 and a Faraday rotator 4, the mode field diameters of an input side fiber 1 and an output side fiber 7 are the same as that of a transmission fiber and an erbium-doped fiber to be connected to them. The shape and other features of each lens are controlled so that the spot size of a parallel ray which is converted from an incident ray by an input side lens 2 is equal to the spot size of a parallel ray which is converted by an output side lens 6 when a reference beam is irradiated from the fiber 7. In a rare-earth-doped fiber optical amplifier using an optical isolator which is configured in a manner similar to this, the connecting portion of the fiber and the optical isolator can be spliced by fusion without increasing the insertion loss of the optical isolator in the forward direction and the connection loss due to a difference in the mode field diameter is reduced. Therefore, the noise figure decreases and the gain increases.
摘要翻译： 在包括楔形偏振棱镜3和5以及法拉第旋转器4的偏振依赖型光隔离器中，输入侧光纤1和输出侧光纤7的模场直径与传输光纤和掺铒光纤的模场直径相同 光纤连接到它们。 控制每个透镜的形状和其它特征，使得通过输入侧透镜2从入射光线转换的平行光线的光斑尺寸等于由输出侧透镜转换的平行光线的光斑尺寸 6，当从光纤7照射参考光束时。在采用与此类似的方式配置的光隔离器的稀土掺杂光纤放大器中，光纤和光隔离器的连接部分可以被 融合而不增加光隔离器在正向上的插入损耗，并且由于模场直径差导致的连接损耗减小。 因此，噪声系数下降，增益增加。
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公开(公告)号：US5844931A
公开(公告)日：1998-12-01
申请号：US903881
申请日：1997-07-31
CPC分类号： H01S5/2231 , H01S5/16 , H01S5/168 , H01S5/22 , H01S5/3211 , H01S5/3213
摘要： A semiconductor laser which does not cause a sudden failure due to an electric surge. A ridge that is formed by a GaAs buffer layer, an n-InGaP cladding layer which is lattice-matched to a GaAs substrate, a strained-quantum well active layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, a p-GaAs waveguide layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, and a p-GaAs cap layer is constructed on the n-GaAs substrate by being buried therein by an n-InGaP current-blocking layer. A device stripe is constructed by a current-injected region in the device and current-non-injected regions near facets.
摘要翻译： 半导体激光器，不会由于电涌而引起突然的故障。 由GaAs缓冲层形成的脊，与GaAs衬底晶格匹配的n-InGaP包层，应变量子阱有源层，与GaAs衬底晶格匹配的p-InGaP包层 在n-GaAs衬底上埋设n-InGaP电流型p型GaAs波导层，与GaAs衬底晶格匹配的p-InGaP包覆层和p-GaAs覆盖层， 阻挡层。 器件条纹由器件中的电流注入区域和小面附近的电流非注入区域构成。
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6.发明授权Light-receiving device array, optical receiver module, and optical transceiver 有权光接收装置阵列，光接收模块和光收发器公开(公告)号：US08907266B2
公开(公告)日：2014-12-09
申请号：US13465260
申请日：2012-05-07
申请人： Takashi Toyonaka , Takuma Ban , Hiroshi Hamada
发明人： Takashi Toyonaka , Takuma Ban , Hiroshi Hamada
IPC分类号： H01J5/02 , H04B10/00 , H01L31/0224 , H01L31/109 , H01L27/144
CPC分类号： H01L31/022408 , H01L27/1446 , H01L31/109 , H01L2224/48091 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light-receiving device array includes a photodiode array that is provided with plural light-receiving sections each of which includes a first conductivity type electrode and a second conductivity type electrode, and a carrier, wherein the carrier includes plural pair of electric lines each of which is formed from a first electric line connected to the first conductivity type electrode of each light-receiving section, and a second electric line connected to the second conductivity type electrode of the light-receiving section, a first ground electrode that extends between one pair of electric lines of the plural pair of electric lines and a pair of electric lines adjacent to the one pair of electric lines, and a second ground electrode that is formed on a part of the rear surface and is electrically connected to the first ground electrode.
摘要翻译： 光接收装置阵列包括具有多个受光部的光电二极管阵列，每个光接收部分包括第一导电型电极和第二导电型电极以及载体，其中载体包括多对电线 其由连接到每个光接收部分的第一导电类型电极的第一电线和连接到光接收部分的第二导电类型电极的第二电线形成，第一接地电极在一对之间延伸 所述多根电线的电线和与所述一对电线相邻的一对电线，以及形成在所述后表面的一部分上并与所述第一接地电极电连接的第二接地电极。
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7.发明授权Backside illuminated semiconductor light-receiving device, optical receiver module, and optical transceiver 有权背面照明半导体光接收装置，光接收模块和光收发器公开(公告)号：US08575714B2
公开(公告)日：2013-11-05
申请号：US13085604
申请日：2011-04-13
IPC分类号： H01L31/00
CPC分类号： H01L31/022408 , H01L31/02327 , H01L31/03046 , H01L31/035281 , H01L31/105 , Y02E10/544
摘要： Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.
摘要翻译： 提供了一种提高频率特性而不劣化组装操作性的背面照明半导体光接收装置。 光接收装置包括矩形基板; 形成在所述基板的前表面上的一侧的中心部分上的光接收台面部分，并且包括PN结部分; 形成在所述光接收台面部分上并且在所述PN结部分的一侧导电的P型电极; 形成在所述一侧的一个角部上的N型电极台面部; N型电极被拉出到N型电极台面部分并与PN结部分的另一侧导电; 形成在包括三个其他角部的区域中的P型电极台面部分和虚设电极台面部分; 以及形成在虚拟电极台面部上的虚拟电极。
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公开(公告)号：US06800914B2
公开(公告)日：2004-10-05
申请号：US10224115
申请日：2002-08-19
IPC分类号： H01L31107
CPC分类号： H01L31/107
摘要： Reducing a dark current in a semiconductor photodetector provided with a second mesa including an regrown layer around a first mesa. An n-type buffer layer, a n-type multiplication layer, a p-type field control layer, a p-type absorption layer, a cap layer made of p-type InAlAs crystal, and a p-type contact layer 107 are made to grow on a main surface of a n-type substrate. Thereafter the p-type contact layer, the p-type cap layer, the p-type absorption layer and the p-type field control layer are patterned to form a first mesa. Next, after making a p-type regrown layer selectively grow around the first mesa or by forming a groove in the regrow layer located in a vicinity of the p-type cap type during a step of the selective growth, the p-type cap layer containing Al and the regrow layer are separated owing to the groove such that no current path is formed between both layers.
摘要翻译： 在具有围绕第一台面的重新生长层的第二台面的半导体光电检测器中减小暗电流。 制作n型缓冲层，n型倍增层，p型场控制层，p型吸收层，由p型InAlAs晶体制成的覆盖层和p型接触层107 在n型衬底的主表面上生长。 此后，对p型接触层，p型覆盖层，p型吸收层和p型场控制层进行图案化以形成第一台面。 接下来，在选择性生长的步骤中，使p型再生长层选择性地生长在第一台面周围或者通过在位于p型帽类型附近的再生层中形成沟槽，p型覆盖层 含有Al并且再生层由于槽而分离，使得在两层之间不形成电流路径。
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