公开(公告)号：US07538047B2

公开(公告)日：2009-05-26

申请号：US11451519

申请日：2006-06-13

申请人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

发明人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

IPC分类号： H01L21/469

CPC分类号： H01L21/76229 ,  H01L21/76224

摘要： A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.

摘要翻译： 一种制造半导体器件的方法包括在包括半导体衬底的衬底的表面上形成用于隔离的沟槽，通过将溶液涂覆在衬底上，用含有全氢硅氮烷聚合物的溶液填充沟槽，将溶液转化为含有 通过加热溶液，将膜转化为二氧化硅膜，包括在含有蒸气的气氛中的第一温度下加热该膜，并且在第一温度下在比第一温度低的温度下加热第一温度的膜， 含有蒸汽或纯水的气氛。

公开(公告)号：US07682927B2

公开(公告)日：2010-03-23

申请号：US11387854

申请日：2006-03-24

申请人： Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Atsuko Kawasaki

发明人： Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Atsuko Kawasaki

IPC分类号： H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/3165 ,  H01L27/115 ,  H01L27/11521

摘要： A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the film into an insulating film containing silicon and oxygen.

摘要翻译： 一种半导体装置的制造方法，其特征在于，在基材上涂布含有过羟硅氮烷聚合物的溶液，加热所述溶液，形成含有所述含水硅氮烷聚合物的膜，并在减压下在水蒸气气氛中氧化所述膜， 含硅和氧的绝缘膜。

公开(公告)号：US20080090988A1

公开(公告)日：2008-04-17

申请号：US11905049

申请日：2007-09-27

申请人： Keisuke Nakazawa ,  Katsuhiko Tachibana ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Atsuko Kawasaki ,  Osamu Arisumi

发明人： Keisuke Nakazawa ,  Katsuhiko Tachibana ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Atsuko Kawasaki ,  Osamu Arisumi

IPC分类号： C08G77/12 ,  H01L21/31

CPC分类号： H01L21/3125 ,  C08G77/62 ,  C09D183/16 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02337

摘要： A method for handling polysilazane or a polysilazane solution includes synthesizing polysilazane and preparing the polysilazane solution in a first space isolated from outside air. The first space is mainly supplied with air from which amine, basic substance, volatile organic compound and acidic substance are eliminated.

摘要翻译： 聚硅氮烷或聚硅氮烷溶液的处理方法包括合成聚硅氮烷并在与外部空气隔离的第一空间中制备聚硅氮烷溶液。 第一个空间主要供应有空气，从中除去胺，碱性物质，挥发性有机化合物和酸性物质。

公开(公告)号：US20070004170A1

公开(公告)日：2007-01-04

申请号：US11451519

申请日：2006-06-13

申请人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

发明人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

IPC分类号： H01L21/76

CPC分类号： H01L21/76229 ,  H01L21/76224

摘要： A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.

摘要翻译： 一种制造半导体器件的方法包括在包括半导体衬底的衬底的表面上形成用于隔离的沟槽，通过将溶液涂覆在衬底上，用含有全氢硅氮烷聚合物的溶液填充沟槽，将溶液转化为含有 通过加热溶液，将膜转化为二氧化硅膜，包括在含有蒸气的气氛中的第一温度下加热该膜，并且在第一温度下在比第一温度低的温度下加热第一温度的膜， 含有蒸汽或纯水的气氛。

公开(公告)号：US20060246684A1

公开(公告)日：2006-11-02

申请号：US11387854

申请日：2006-03-24

申请人： Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Atsuko Kawasaki

发明人： Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Atsuko Kawasaki

IPC分类号： H01L21/76 ,  H01L21/8242

CPC分类号： H01L21/76229 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/3165 ,  H01L27/115 ,  H01L27/11521

摘要： A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the film into an insulating film containing silicon and oxygen.

摘要翻译： 一种半导体装置的制造方法，其特征在于，在基材上涂布含有过羟硅氮烷聚合物的溶液，加热所述溶液，形成含有所述含水硅氮烷聚合物的膜，并在减压下在水蒸气气氛中氧化所述膜， 含硅和氧的绝缘膜。

公开(公告)号：US07407864B2

公开(公告)日：2008-08-05

申请号：US11175305

申请日：2005-07-07

申请人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

发明人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

IPC分类号： H01L21/76

CPC分类号： H01L21/3125 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31053 ,  H01L21/316 ,  H01L21/76224

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底中形成元件隔离沟槽，在其上形成元件隔离沟槽的半导体衬底上涂覆聚硅氮烷二次酐溶液以形成聚硅氮烷过渡膜，所述聚硅氮烷过硼酸盐溶液包含二丁基醚 具有30ppm以下的丁醇浓度，溶解在二丁基醚中的聚硅氮烷二烷基化钠，在含有水蒸汽的气氛中使聚硅氮烷二次酐膜氧化，形成二氧化硅膜，选择性地除去二氧化硅膜离开硅 元件隔离沟中的二氧化硅膜形成元件隔离绝缘膜。

公开(公告)号：US20060205165A1

公开(公告)日：2006-09-14

申请号：US11175305

申请日：2005-07-07

申请人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

发明人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

IPC分类号： H01L21/76

CPC分类号： H01L21/3125 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31053 ,  H01L21/316 ,  H01L21/76224

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底中形成元件隔离沟槽，在其上形成元件隔离沟槽的半导体衬底上涂覆聚硅氮烷二次酐溶液以形成聚硅氮烷过渡膜，所述聚硅氮烷过硼酸盐溶液包含二丁基醚 具有30ppm以下的丁醇浓度，溶解在二丁基醚中的聚硅氮烷二烷基化钠，在含有水蒸汽的气氛中使聚硅氮烷二次酐膜氧化，形成二氧化硅膜，选择性地除去二氧化硅膜离开硅 元件隔离沟中的二氧化硅膜形成元件隔离绝缘膜。

公开(公告)号：US20070224749A1

公开(公告)日：2007-09-27

申请号：US11798956

申请日：2007-05-18

申请人： Takeshi Hoshi ,  Masahiro Kiyotoshi

发明人： Takeshi Hoshi ,  Masahiro Kiyotoshi

IPC分类号： H01L21/336

CPC分类号： C23C18/125 ,  C23C18/06 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1275 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/3141 ,  H01L21/31612

摘要： According to the present invention, there is provided a semiconductor device fabrication method having: coating a semiconductor substrate with a silazane perhydride polymer solution prepared by dispersing a silazane perhydride polymer in a solvent containing carbon, thereby forming a coating film; forming a polysilazane film by volatilizing the solvent by heat-treating the coating film; and inserting the semiconductor substrate into a predetermined furnace, lowering a pressure in the furnace, and oxidizing the polysilazane film while the pressure in the furnace is raised by supplying steam into the furnace, thereby forming a silicon oxide film.

摘要翻译： 根据本发明，提供了一种半导体器件制造方法，其具有：通过将硅氮烷二酸酐聚合物分散在含有碳的溶剂中而制备的硅氮烷聚合物溶液涂覆半导体衬底，从而形成涂膜; 通过对涂膜进行热处理使溶剂挥发而形成聚硅氮烷膜; 并且将半导体衬底插入预定的炉中，降低炉中的压力，并且通过向炉中供应蒸汽来升高炉中的压力来氧化聚硅氮烷膜，由此形成氧化硅膜。

公开(公告)号：US07238587B2

公开(公告)日：2007-07-03

申请号：US11167233

申请日：2005-06-28

申请人： Takeshi Hoshi ,  Masahiro Kiyotoshi

发明人： Takeshi Hoshi ,  Masahiro Kiyotoshi

IPC分类号： H01L21/76

CPC分类号： C23C18/125 ,  C23C18/06 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1275 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/3141 ,  H01L21/31612

摘要： According to the present invention, there is provided a semiconductor device fabrication method that coats a semiconductor substrate with a silazane perhydride polymer solution prepared by dispersing a silazane perhydride polymer in a solvent containing carbon, thereby forming a coating film. A polysilazane film is formed by volatilizing the solvent by heat-treating the coating film. The semiconductor substrate is inserted into a predetermined furnace, where the pressure in the furnace is lowered. The polysilazane film is oxidized while the pressure in the furnace is raised by supplying steam into the furnace, thereby forming a silicon oxide film.

摘要翻译： 根据本发明，提供一种半导体器件的制造方法，该半导体器件制造方法通过将硅氮烷聚合物分散在含有碳的溶剂中而制备的硅氮烷聚合物溶液涂覆半导体衬底，从而形成涂膜。 通过对涂膜进行热处理使溶剂挥发而形成聚硅氮烷膜。 将半导体衬底插入预定的炉中，其中炉中的压力降低。 聚硅氮烷膜被氧化，同时通过向炉内供应蒸汽来升高炉中的压力，从而形成氧化硅膜。

公开(公告)号：US20060178020A1

公开(公告)日：2006-08-10

申请号：US11167233

申请日：2005-06-28

申请人： Takeshi Hoshi ,  Masahiro Kiyotoshi

发明人： Takeshi Hoshi ,  Masahiro Kiyotoshi

IPC分类号： H01L21/31

CPC分类号： C23C18/125 ,  C23C18/06 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1275 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/3141 ,  H01L21/31612

摘要： According to the present invention, there is provided a semiconductor device fabrication method having: coating a semiconductor substrate with a silazane perhydride polymer solution prepared by dispersing a silazane perhydride polymer in a solvent containing carbon, thereby forming a coating film; forming a polysilazane film by volatilizing the solvent by heat-treating the coating film; and inserting the semiconductor substrate into a predetermined furnace, lowering a pressure in the furnace, and oxidizing the polysilazane film while the pressure in the furnace is raised by supplying steam into the furnace, thereby forming a silicon oxide film.