公开(公告)号：US5972437A

公开(公告)日：1999-10-26

申请号：US799203

申请日：1997-02-13

申请人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Hiroshi Kuroki

发明人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Hiroshi Kuroki

IPC分类号： H01L21/318 ,  H01L21/28 ,  H01L21/326 ,  H01L21/336 ,  H01L29/51 ,  H01L29/786 ,  B05D3/06 ,  H01L29/78

CPC分类号： H01L21/28202 ,  H01L21/28158 ,  H01L21/326 ,  H01L29/518 ,  H01L29/66757

摘要： To promote the characteristic of an interface between a gate insulating film and a semiconductor and control the threshold voltage, in forming the insulating film, a surface on which the insulating film is to be formed is previously exposed to activated oxygen and thereafter, the insulating film is formed on the surface, or in steps of manufacturing a thin film transistor, the insulating film is formed with monosilane, dinitrogen monoxide and oxygen as raw materials.

摘要翻译： 为了提高栅极绝缘膜和半导体之间的界面的特性并控制阈值电压，在形成绝缘膜时，要形成绝缘膜的表面预先暴露于活性氧，此后，绝缘膜 形成在表面上，或者在制造薄膜晶体管的步骤中，以甲硅烷，一氧化二氮和氧为原料形成绝缘膜。

公开(公告)号：US06380562B1

公开(公告)日：2002-04-30

申请号：US09477172

申请日：2000-01-04

申请人： Michiko Takei ,  Tatsuya Ohori ,  Hongyong Zhang ,  Satomi Nagasawa

发明人： Michiko Takei ,  Tatsuya Ohori ,  Hongyong Zhang ,  Satomi Nagasawa

IPC分类号： H01L29786

CPC分类号： G02F1/136209

摘要： A number of parallel light-interrupting stripes are formed over the entire TFT substrate, and light-interrupting patterns that are isolated from each other are formed separately from the light-interrupting stripes. Light interruption along gate bus patterns is effected by the light-interrupting stripes, while light interruption along data bus patterns is effected by elongating branches from the gate bus patterns. Light interruption between the tip of each branch and a polysilicon drain is effected by the isolated light-interrupting pattern.

摘要翻译： 在整个TFT基板上形成多个平行的光中断条纹，并且彼此隔离的光中断图案与光中断条纹分开形成。 沿着栅极总线模式的光中断是通过光中断条纹实现的，而沿着数据总线模式的光中断通过从栅极总线图案延伸分支来实现。 每个分支的尖端与多晶硅漏极之间的光中断通过隔离的光中断模式来实现。

公开(公告)号：US5985701A

公开(公告)日：1999-11-16

申请号：US851219

申请日：1997-05-05

申请人： Michiko Takei ,  Tatsuya Ohori ,  Hongyong Zhang ,  Hideki Uochi

发明人： Michiko Takei ,  Tatsuya Ohori ,  Hongyong Zhang ,  Hideki Uochi

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/316 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L21/8238

CPC分类号： H01L29/78621 ,  H01L27/1214 ,  H01L29/66757

摘要： A process reduced in mask steps for use in the fabrication of a thin film transistor having an LDD structure, comprising anodically oxidizing a gate electrode of a thin film transistor and performing ion implantation using the thus formed anodic oxide film as the mask. Also claimed is a similar process for fabricating a p-channel transistor and an n-channel transistor on a single substrate, comprising performing ion implantation of an impurity of the first conductive type to both of the transistor regions by using the anodic oxide film as a mask, and then performing ion implantation of an impurity of the second conductive type while masking one of the transistor regions with a resist.

摘要翻译： 一种降低掩模步骤的方法，用于制造具有LDD结构的薄膜晶体管，其包括用薄膜晶体管的栅电极进行阳极氧化，并使用由此形成的阳极氧化膜作为掩模进行离子注入。 还要求保护的是在单个衬底上制造p沟道晶体管和n沟道晶体管的类似工艺，包括通过使用阳极氧化膜作为第一导电类型的杂质作为第一导电类型的杂质 掩模，然后进行第二导电类型的杂质的离子注入，同时用抗蚀剂掩蔽晶体管区域之一。

公开(公告)号：US06198517B1

公开(公告)日：2001-03-06

申请号：US09323559

申请日：1999-06-01

申请人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Hideomi Suzawa ,  Naoaki Yamaguchi

发明人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Hideomi Suzawa ,  Naoaki Yamaguchi

IPC分类号： G02F1136

CPC分类号： G02F1/136209

摘要： An active type liquid crystal display device, comprising an electrode being formed by using a transparent electrically conductive film constituting a pixel electrode, which allows the black matrix to be set as the common potential. Also claimed is an active type liquid crystal display device of the same type as above, comprising an electrode being formed on the same layer as that of the source line, which allows the black matrix to be set as the common potential.

公开(公告)号：US5929948A

公开(公告)日：1999-07-27

申请号：US808949

申请日：1997-02-19

申请人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Hideomi Suzawa ,  Naoaki Yamaguchi

发明人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Hideomi Suzawa ,  Naoaki Yamaguchi

IPC分类号： G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/136 ,  G02F1/1333 ,  G02F1/1345

CPC分类号： G02F1/136209

摘要： An active matrix liquid crystal display comprising a common electrode (#217), connected to a conductive black matrix (#302 and #303) through a coupling electrode (#227), which allows the black matrix to be set at the common potential. The common electrode is formed on the same layer as that of the source lines and data lines. The pixel electrode (#228) and the coupling electrode (#227) are comprised of the same transparent electrically conductive material.

摘要翻译： 一种有源矩阵液晶显示器，包括通过耦合电极（＃227）连接到导电黑矩阵（＃302和＃303）的公共电极（＃217），其允许将黑矩阵设置在公共电位。 公共电极形成在与源极线和数据线的层相同的层上。 像素电极（＃228）和耦合电极（＃227）由相同的透明导电材料构成。

公开(公告)号：US06181389B2

公开(公告)日：2001-01-30

申请号：US08842469

申请日：1997-05-05

申请人： Michiko Takei ,  Tatsuya Ohori ,  Hongyong Zhang ,  Satomi Nagasawa

发明人： Michiko Takei ,  Tatsuya Ohori ,  Hongyong Zhang ,  Satomi Nagasawa

IPC分类号： G02F11343

CPC分类号： G02F1/136209

摘要： A number of parallel light-interrupting stripes are formed over the entire TFT substrate, and light-interrupting patterns that are isolated from each other are formed separately from the light-interrupting stripes. Light interruption along gate bus patterns is effected by the light-interrupting stripes, while light interruption along data bus patterns is effected by elongating branches from the gate bus patterns. Light interruption between the tip of each branch and a polysilicon drain is effected by the isolated light-interrupting pattern.

摘要翻译： 在整个TFT基板上形成多个平行的光中断条纹，并且彼此隔离的光中断图案与光中断条纹分开形成。 沿着栅极总线模式的光中断是通过光中断条纹实现的，而沿着数据总线模式的光中断通过从栅极总线图案延伸分支来实现。 每个分支的尖端与多晶硅漏极之间的光中断通过隔离的光中断模式来实现。

公开(公告)号：US06982768B2

公开(公告)日：2006-01-03

申请号：US09797913

申请日：2001-03-01

申请人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Hideomi Suzawa ,  Naoaki Yamaguchi

发明人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Hideomi Suzawa ,  Naoaki Yamaguchi

IPC分类号： G02F1/136

CPC分类号： G02F1/136209

摘要： An active type liquid crystal display device, comprising an electrode being formed by using a transparent electrically conductive film constituting a pixel electrode, which allows the black matrix to be set as the common potential. Also claimed is an active type liquid crystal display device of the same type as above, comprising an electrode being formed on the same layer as that of the source line, which allows the black matrix to be set as the common potential.

摘要翻译： 一种主动型液晶显示装置，其特征在于，具有通过使用构成像素电极的透明导电膜形成的电极，其能够将黑矩阵设定为公共电位。 还要求保护的是与上述相同类型的有源型液晶显示装置，其包括形成在与源极线相同的层上的电极，其允许将黑矩阵设定为公共电位。

公开(公告)号：US06239850B1

公开(公告)日：2001-05-29

申请号：US08841849

申请日：1997-05-05

申请人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Jun Koyama

发明人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Jun Koyama

IPC分类号： G02F11333

CPC分类号： G02F1/136204

摘要： A process of fabricating a liquid crystal electro-optical (display) device. The device includes discharge accelerating patterns extending from associated gate bus patterns and provided with a unique geometry. The disclosed geometry minimizes the dielectric breakdown of a gate insulating film attributable to plasma discharge between gate and source/drain electrodes of the associated thin film transistors.

摘要翻译： 一种制造液晶电光（显示）装置的方法。 该装置包括从关联的栅极总线图案延伸并且具有独特几何形状的放电加速图案。 所公开的几何形状最小化归因于相关联的薄膜晶体管的栅极和源极/漏极之间的等离子体放电的栅极绝缘膜的介电击穿。

公开(公告)号：US6025607A

公开(公告)日：2000-02-15

申请号：US842301

申请日：1997-05-05

申请人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Yuugo Goto

发明人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Yuugo Goto

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/266 ,  H01L21/336 ,  H01L29/786 ,  H01L31/0392

CPC分类号： H01L29/66757

摘要： A polysilicon pattern constituting an active portion of a TFT is formed on a substrate so as to be curved to generally assume a U shape, and a gate pattern is formed as a straight conductor pattern. The gate pattern is so disposed as to cross the U-shaped polysilicon pattern plural times. The silicon pattern comprise a plurality of channel regions and impurity regions of which alignment is symmetrical.

摘要翻译： 构成TFT的有源部分的多晶硅图案形成在基板上，以弯曲成大致呈U字状，并且栅极图案形成为直导体图案。 栅极图案被设置成多次跨越U形多晶硅图案。 硅图案包括多个通道区域和其对准的对称的杂质区域。

公开(公告)号：US5844260A

公开(公告)日：1998-12-01

申请号：US937785

申请日：1997-09-24

申请人： Tatsuya Ohori

发明人： Tatsuya Ohori

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC分类号： H01L29/7783

摘要： A compound semiconductor device constructed on a heteroepitaxial substrate includes a silicon substrate, a first compound semiconductor layer of a first compound semiconductor material provided on the silicon substrate as a buffer layer, a second compound semiconductor layer of a second compound semiconductor material having a lattice constant larger than that of the first compound semiconductor layer, and an active device provided on the second compound semiconductor layer, wherein the second compound semiconductor layer has a thickness exceeding a critical thickness above which dislocations develop due to the misfit in the lattice constant between the first and second compound semiconductor layers.

摘要翻译： 构造在异质外延基板上的复合半导体器件包括硅衬底，设置在作为缓冲层的硅衬底上的第一化合物半导体材料的第一化合物半导体层，具有晶格常数的第二化合物半导体材料的第二化合物半导体层 大于第一化合物半导体层的有效元件，以及设置在第二化合物半导体层上的有源器件，其中第二化合物半导体层的厚度超过临界厚度，在该临界厚度之上，由于第一化合物半导体层之间的晶格常数的失配， 和第二化合物半导体层。