Liquid crystal electro-optical device
    2.
    发明授权
    Liquid crystal electro-optical device 有权
    液晶电光装置

    公开(公告)号:US06380562B1

    公开(公告)日:2002-04-30

    申请号:US09477172

    申请日:2000-01-04

    IPC分类号: H01L29786

    CPC分类号: G02F1/136209

    摘要: A number of parallel light-interrupting stripes are formed over the entire TFT substrate, and light-interrupting patterns that are isolated from each other are formed separately from the light-interrupting stripes. Light interruption along gate bus patterns is effected by the light-interrupting stripes, while light interruption along data bus patterns is effected by elongating branches from the gate bus patterns. Light interruption between the tip of each branch and a polysilicon drain is effected by the isolated light-interrupting pattern.

    摘要翻译: 在整个TFT基板上形成多个平行的光中断条纹,并且彼此隔离的光中断图案与光中断条纹分开形成。 沿着栅极总线模式的光中断是通过光中断条纹实现的,而沿着数据总线模式的光中断通过从栅极总线图案延伸分支来实现。 每个分支的尖端与多晶硅漏极之间的光中断通过隔离的光中断模式来实现。

    Process for fabricating liquid crystal electro-optical device comprising
complementary thin film field effect transistors
    3.
    发明授权
    Process for fabricating liquid crystal electro-optical device comprising complementary thin film field effect transistors 失效
    用于制造包括互补薄膜场效应晶体管的液晶电光器件的工艺

    公开(公告)号:US5985701A

    公开(公告)日:1999-11-16

    申请号:US851219

    申请日:1997-05-05

    摘要: A process reduced in mask steps for use in the fabrication of a thin film transistor having an LDD structure, comprising anodically oxidizing a gate electrode of a thin film transistor and performing ion implantation using the thus formed anodic oxide film as the mask. Also claimed is a similar process for fabricating a p-channel transistor and an n-channel transistor on a single substrate, comprising performing ion implantation of an impurity of the first conductive type to both of the transistor regions by using the anodic oxide film as a mask, and then performing ion implantation of an impurity of the second conductive type while masking one of the transistor regions with a resist.

    摘要翻译: 一种降低掩模步骤的方法,用于制造具有LDD结构的薄膜晶体管,其包括用薄膜晶体管的栅电极进行阳极氧化,并使用由此形成的阳极氧化膜作为掩模进行离子注入。 还要求保护的是在单个衬底上制造p沟道晶体管和n沟道晶体管的类似工艺,包括通过使用阳极氧化膜作为第一导电类型的杂质作为第一导电类型的杂质 掩模,然后进行第二导电类型的杂质的离子注入,同时用抗蚀剂掩蔽晶体管区域之一。

    TFT LCD device with gate/data lines in interrupting patterns
    6.
    发明授权
    TFT LCD device with gate/data lines in interrupting patterns 失效
    TFT LCD设备,具有中断模式的栅极/数据线

    公开(公告)号:US06181389B2

    公开(公告)日:2001-01-30

    申请号:US08842469

    申请日:1997-05-05

    IPC分类号: G02F11343

    CPC分类号: G02F1/136209

    摘要: A number of parallel light-interrupting stripes are formed over the entire TFT substrate, and light-interrupting patterns that are isolated from each other are formed separately from the light-interrupting stripes. Light interruption along gate bus patterns is effected by the light-interrupting stripes, while light interruption along data bus patterns is effected by elongating branches from the gate bus patterns. Light interruption between the tip of each branch and a polysilicon drain is effected by the isolated light-interrupting pattern.

    摘要翻译: 在整个TFT基板上形成多个平行的光中断条纹,并且彼此隔离的光中断图案与光中断条纹分开形成。 沿着栅极总线模式的光中断是通过光中断条纹实现的,而沿着数据总线模式的光中断通过从栅极总线图案延伸分支来实现。 每个分支的尖端与多晶硅漏极之间的光中断通过隔离的光中断模式来实现。

    Liquid crystal display device
    7.
    发明授权
    Liquid crystal display device 失效
    液晶显示装置

    公开(公告)号:US06982768B2

    公开(公告)日:2006-01-03

    申请号:US09797913

    申请日:2001-03-01

    IPC分类号: G02F1/136

    CPC分类号: G02F1/136209

    摘要: An active type liquid crystal display device, comprising an electrode being formed by using a transparent electrically conductive film constituting a pixel electrode, which allows the black matrix to be set as the common potential. Also claimed is an active type liquid crystal display device of the same type as above, comprising an electrode being formed on the same layer as that of the source line, which allows the black matrix to be set as the common potential.

    摘要翻译: 一种主动型液晶显示装置,其特征在于,具有通过使用构成像素电极的透明导电膜形成的电极,其能够将黑矩阵设定为公共电位。 还要求保护的是与上述相同类型的有源型液晶显示装置,其包括形成在与源极线相同的层上的电极,其允许将黑矩阵设定为公共电位。

    Compound semiconductor device constructed on a heteroepitaxial substrate
    10.
    发明授权
    Compound semiconductor device constructed on a heteroepitaxial substrate 失效
    在异质外延衬底上构造的复合半导体器件

    公开(公告)号:US5844260A

    公开(公告)日:1998-12-01

    申请号:US937785

    申请日:1997-09-24

    申请人: Tatsuya Ohori

    发明人: Tatsuya Ohori

    CPC分类号: H01L29/7783

    摘要: A compound semiconductor device constructed on a heteroepitaxial substrate includes a silicon substrate, a first compound semiconductor layer of a first compound semiconductor material provided on the silicon substrate as a buffer layer, a second compound semiconductor layer of a second compound semiconductor material having a lattice constant larger than that of the first compound semiconductor layer, and an active device provided on the second compound semiconductor layer, wherein the second compound semiconductor layer has a thickness exceeding a critical thickness above which dislocations develop due to the misfit in the lattice constant between the first and second compound semiconductor layers.

    摘要翻译: 构造在异质外延基板上的复合半导体器件包括硅衬底,设置在作为缓冲层的硅衬底上的第一化合物半导体材料的第一化合物半导体层,具有晶格常数的第二化合物半导体材料的第二化合物半导体层 大于第一化合物半导体层的有效元件,以及设置在第二化合物半导体层上的有源器件,其中第二化合物半导体层的厚度超过临界厚度,在该临界厚度之上,由于第一化合物半导体层之间的晶格常数的失配, 和第二化合物半导体层。