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公开(公告)号：US06835464B2
公开(公告)日：2004-12-28
申请号：US10251278
申请日：2002-09-19
申请人： Thomas F. Ambrose , Timothy John Klemmer , Rene Johannes Marinus van de Veerdonk , Gregory John Parker , James K. Howard
发明人： Thomas F. Ambrose , Timothy John Klemmer , Rene Johannes Marinus van de Veerdonk , Gregory John Parker , James K. Howard
IPC分类号： H01F100
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , H01F10/30 , H01F10/3218 , H01F10/3286 , H01F41/302 , Y10T428/1157 , Y10T428/1171 , Y10T428/12868 , Y10T428/1291 , Y10T428/32
摘要： A perpendicular exchange biased device comprises a layer of buffer material on a surface of a substrate, a layer of ferromagnetic material on a surface of the buffer layer, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material. A method of making a perpendicular exchange biased device comprising positioning a layer of buffer material on a surface of a substrate, positioning a layer of ferromagnetic material on a surface of the layer of buffer material, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and positioning a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material is also included.
摘要翻译： 垂直交换偏置装置包括在衬底的表面上的缓冲材料层，缓冲层表面上的铁磁材料层，其中铁磁层的磁化位于垂直于层的平面的方向 铁磁材料，以及在铁磁材料层的表面上的一层反铁磁材料。 一种制造垂直交换偏置装置的方法，包括将缓冲材料层定位在衬底的表面上，将铁磁材料层定位在缓冲材料层的表面上，其中铁磁层的磁化位于方向 垂直于铁磁材料层的平面，并且在铁磁材料层的表面上定位一层反铁磁材料。
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2.发明授权Ultrafast pulse field source utilizing optically induced magnetic transformation 有权利用光学诱导磁变换的超快脉冲场源公开(公告)号：US07271981B2
公开(公告)日：2007-09-18
申请号：US10718430
申请日：2003-11-20
IPC分类号： G11B5/127
CPC分类号： G11C11/1675 , G11B11/10534 , G11B2005/0008 , G11B2005/0021 , G11B2005/0034 , G11C11/161
摘要： A magnetic field transducer includes a phase transition material exhibiting a change from an antiferromagnetic phase to a ferromagnetic phase when heated above a critical temperature, means for applying a magnetic bias field to the phase transition material, and means for heating the phase transition material above the critical temperature. Magnetic recording heads that include the transducer and magnetic disc drives that include the magnetic recording heads are also described. A method of producing a magnetic field pulse including applying a magnetic bias field to a phase transition material, and heating the phase transition material to cause the phase transition material to change from an antiferromagnetic phase to a ferromagnetic phase, is also provided. The phase transition material can comprise a rare earth-transition metal alloy, where the alloy is heated above a compensation temperature.
摘要翻译： 磁场换能器包括在加热到高于临界温度时表现出从反铁磁相到铁磁相的变化的相变材料，用于向相变材料施加磁偏置场的装置，以及用于加热相转变材料上方的相变材料的装置 临界温度。 还描述了包括换能器和包括磁记录头的磁盘驱动器的磁记录头。 还提供了一种产生磁场脉冲的方法，包括对相变材料施加磁偏置场，并加热相变材料以使相变材料从反铁磁相变为铁磁相。 相变材料可以包括稀土 - 过渡金属合金，其中合金被加热到高于补偿温度。
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公开(公告)号：US11342491B2
公开(公告)日：2022-05-24
申请号：US17035147
申请日：2020-09-28
摘要： One example includes a magnetic Josephson junction (MJJ) system. The system includes a first superconducting material layer and a second superconducting material layer each configured respectively as a galvanic contacts. The system also includes a ferrimagnetic material layer arranged between the first and second superconducting material layers and that is configured to exhibit a fixed net magnetic moment at a predetermined operating temperature of the MJJ system. The system also includes a ferromagnetic material layer arranged between the first and second superconducting material layers and that is configured to exhibit a variable magnetic orientation in response to an applied magnetic field. The MJJ system can be configured to store a binary logical value based on a direction of the variable magnetic orientation of the ferromagnetic material layer. The system further includes a spacer layer arranged between the ferromagnetic and the ferrimagnetic material layers.
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公开(公告)号：US11024791B1
公开(公告)日：2021-06-01
申请号：US16773325
申请日：2020-01-27
摘要： A memory cell is provided that comprises a first superconductor electrode, a second superconductor electrode, and a magnetic Josephson junction (MJJ) stack disposed between the first superconductor electrode and the second superconductor electrode. The MJJ stack includes a magnetic reference layer and a magnetic storage layer. The memory cell further comprises a magnetically stabilizing structure disposed between the MJJ stack and the second superconductor electrode, wherein the magnetic stabilizing structure magnetically couples with the magnetic reference layer to strengthen the fixed state of the magnetic reference layer.
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5.发明授权Magnetic field sensor including multiple magnetoresistive sensing elements for patterned media 有权磁场传感器包括用于图案化介质的多个磁阻感测元件公开(公告)号：US08411392B2
公开(公告)日：2013-04-02
申请号：US12144901
申请日：2008-06-24
摘要： An apparatus for sensing magnetic domains in a patterned media that includes a first sensing element and a second sensing element in electrical communication with the first sensing element. The first sensing element has an output voltage lead and the second sensing element has an output voltage lead. The patterned media may be a bit patterned media or a track patterned media.
摘要翻译： 一种用于感测图案化介质中的磁畴的装置，其包括与第一感测元件电连通的第一感测元件和第二感测元件。 第一感测元件具有输出电压引线，并且第二感测元件具有输出电压引线。 图案化介质可以是位图案化介质或轨迹图案化介质。
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公开(公告)号：US10720572B1
公开(公告)日：2020-07-21
申请号：US16273777
申请日：2019-02-12
摘要： A memory device includes a memory stack formed on a substrate to program skyrmions within at least one layer of the stack. The skyrmions represent logic states of the memory device. The memory stack further includes a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack. A free layer stores a logic state of the skyrmions in response to the electrical current. A Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer induces skyrmions in the free layer. A tunnel barrier is interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current. At least one fixed magnetic (FM) layer is positioned within the memory stack to facilitate programming of the skyrmions within the free layer in response to the electrical current.
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公开(公告)号：US09324401B2
公开(公告)日：2016-04-26
申请号：US12881072
申请日：2010-09-13
CPC分类号： G11C11/165 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.
摘要翻译： 磁阻存储元件设置有读取模块，该读取模块具有可由从外部电路接收的读取电流读取的具有磁阻的第一固定层。 写入模块具有接收来自外部电路的写入电流的纳米接触，并且进而将自旋转矩赋予用作读取模块和写入模块的共享存储层的自由层。
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公开(公告)号：US11631797B2
公开(公告)日：2023-04-18
申请号：US17095379
申请日：2020-11-11
IPC分类号： H01L39/22 , G11B5/31 , G11C11/16 , G11C11/44 , H01F10/32 , H01F41/32 , H01L27/22 , H01L39/02 , H01L39/12 , H01L39/24 , H01L43/02 , H01L43/10 , H01L43/12
摘要： A buffer layer can be used to smooth the surface roughness of a galvanic contact layer (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered cubic (FCC) crystal structure material, such as copper, the at least four FCC material layers alternating with at least three layers of a body-centered cubic (BCC) crystal structure material, such as niobium, wherein each of the FCC material layers and BCC material layers is between about five and about ten angstroms thick. The buffer layer can provide the smoothing while still maintaining desirable transport properties of a device in which the buffer layer is used, such as a magnetic Josephson junction, and magnetics of an overlying magnetic layer in the device, thereby permitting for improved magnetic Josephson junctions (MJJs) and thus improved superconducting memory arrays and other devices.
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公开(公告)号：US11211117B2
公开(公告)日：2021-12-28
申请号：US16256547
申请日：2019-01-24
摘要： A magnetic Josephson junction (MJJ) device having a ferrimagnetic/ferromagnetic (FIM/FM) exchange-biased bilayer used as the magnetic hard layer improves switching performance by effectively sharpening the hysteresis curve of the device, thereby reducing error rate when the device is used in a Josephson magnetic random access memory (JMRAM) memory cell. Thus, the materials and devices described herein can be used to build a new type of MJJ, termed a ferrimagnetic Josephson junction (FIMJJ), for use in JMRAM, to construct a robust and reliable cryogenic computer memory that can be used for high-speed superconducting computing, e.g., with clock speeds in the microwave frequency range.
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公开(公告)号：US20100165508A1
公开(公告)日：2010-07-01
申请号：US12347141
申请日：2008-12-31
申请人： Erol Girt , Dieter K. Weller , Alexander Y. Dobin , Bogdan F. Valcu , Thomas F. Ambrose , Yingguo Peng , Yukiko A. Kubota , Abebe Hailu
发明人： Erol Girt , Dieter K. Weller , Alexander Y. Dobin , Bogdan F. Valcu , Thomas F. Ambrose , Yingguo Peng , Yukiko A. Kubota , Abebe Hailu
IPC分类号： G11B5/82
摘要： A perpendicular magnetic recording layer of a magnetic recording medium includes a plurality of bit-patterned magnetic islands, wherein each of the plurality of islands overlay a soft magnetic under-layer. Each of the magnetic islands includes a first magnetic sub-layer adjacent a second magnetic sub-layer, wherein the first sub-layer has a relatively high magnetic anisotropy that is greater than a magnetic anisotropy of the second sub-layer. The magnetic recording layer further includes a third sub-layer, which extends to connect each of the plurality of islands. The third sub-layer may have a magnetic anisotropy that is less than that of the second sub-layer of each of the magnetic islands and/or may serve as an interlayer, extending between the first sub-layer and the soft magnetic under-layer of the recording medium, and having a structure to help to produce the greater anisotropy first magnetic sub-layer.
摘要翻译： 磁记录介质的垂直磁记录层包括多个位图形磁岛，其中多个岛中的每一个覆盖软磁底层。 每个磁岛包括与第二磁性子层相邻的第一磁性子层，其中第一子层具有大于第二子层的磁各向异性的相对高的磁各向异性。 磁记录层还包括延伸以连接多个岛中的每一个的第三子层。 第三子层可以具有小于每个磁岛的第二子层的磁各向异性和/或可以用作在第一子层和软磁性底层之间延伸的中间层 并且具有有助于产生更大的各向异性的第一磁性子层的结构。
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