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公开(公告)号：US07426134B2
公开(公告)日：2008-09-16
申请号：US11361811
申请日：2006-02-24
IPC分类号： G11C11/00
CPC分类号： G11C7/062 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054 , G11C2211/5634
摘要： A memory includes a phase-change memory cell and a circuit. The phase-change memory cell can be set to at least three different states including a substantially crystalline state, a substantially amorphous state, and at least one partially crystalline and partially amorphous state. The circuit applies a first voltage across the memory cell to determine whether the memory cell is set at the substantially crystalline state and applies a second voltage across the memory cell to determine whether the memory cell is set at a partially crystalline and partially amorphous state.
摘要翻译： 存储器包括相变存储器单元和电路。 相变存储单元可以被设置为至少三种不同的状态，包括基本上为结晶状态，基本为非晶状态，以及至少一种部分结晶和部分非晶状态。 电路在存储器单元两端施加第一电压以确定存储器单元是否被设置在基本上为结晶状态，并且在该存储单元上施加第二电压以确定存储器单元是否被设置为部分结晶和部分非晶态。
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公开(公告)号：US20070201267A1
公开(公告)日：2007-08-30
申请号：US11361811
申请日：2006-02-24
IPC分类号： G11C11/00
CPC分类号： G11C7/062 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054 , G11C2211/5634
摘要： A memory includes a phase-change memory cell and a circuit. The phase-change memory cell can be set to at least three different states including a substantially crystalline state, a substantially amorphous state, and at least one partially crystalline and partially amorphous state. The circuit applies a first voltage across the memory cell to determine whether the memory cell is set at the substantially crystalline state and applies a second voltage across the memory cell to determine whether the memory cell is set at a partially crystalline and partially amorphous state.
摘要翻译： 存储器包括相变存储器单元和电路。 相变存储单元可以被设置为至少三种不同的状态，包括基本上为结晶状态，基本为非晶状态，以及至少一种部分结晶和部分非晶状态。 电路在存储器单元两端施加第一电压以确定存储器单元是否被设置在基本上为结晶状态，并且在该存储单元上施加第二电压以确定存储器单元是否被设置为部分结晶和部分非晶态。
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公开(公告)号：US20080179591A1
公开(公告)日：2008-07-31
申请号：US11668992
申请日：2007-01-30
CPC分类号： H01L45/144 , G11C13/0004 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A memory cell comprises a lower electrode, a phase change feature, a spacer feature, and a dielectric layer. The lower electrode comprises a first surface region as well as a second surface region that is raised in relation to the first surface region. The phase change feature is disposed on the second surface region of the lower electrode and has one or more sidewalls. The spacer feature is also disposed on the second surface region of the lower electrode and against the one or more sidewalls of the phase change feature. The dielectric layer is formed at least partially on top of the first surface region of the lower electrode and abutting the spacer feature.
摘要翻译： 存储单元包括下电极，相变特征，间隔物特征和介电层。 下电极包括第一表面区域以及相对于第一表面区域升高的第二表面区域。 相变特征设置在下电极的第二表面区域上并且具有一个或多个侧壁。 间隔件特征也设置在下电极的第二表面区域上并抵靠相变特征的一个或多个侧壁。 电介质层至少部分地形成在下电极的第一表面区域的顶部上并邻接间隔物特征。
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公开(公告)号：US07525176B2
公开(公告)日：2009-04-28
申请号：US11668992
申请日：2007-01-30
CPC分类号： H01L45/144 , G11C13/0004 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A memory cell comprises a lower electrode, a phase change feature, a spacer feature, and a dielectric layer. The lower electrode comprises a first surface region as well as a second surface region that is raised in relation to the first surface region. The phase change feature is disposed on the second surface region of the lower electrode and has one or more sidewalls. The spacer feature is also disposed on the second surface region of the lower electrode and against the one or more sidewalls of the phase change feature. The dielectric layer is formed at least partially on top of the first surface region of the lower electrode and abutting the spacer feature.
摘要翻译： 存储单元包括下电极，相变特征，间隔物特征和介电层。 下电极包括第一表面区域以及相对于第一表面区域升高的第二表面区域。 相变特征设置在下电极的第二表面区域上并且具有一个或多个侧壁。 间隔件特征也设置在下电极的第二表面区域上并抵靠相变特征的一个或多个侧壁。 电介质层至少部分地形成在下电极的第一表面区域的顶部上并邻接间隔物特征。
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公开(公告)号：US08742387B2
公开(公告)日：2014-06-03
申请号：US12145608
申请日：2008-06-25
申请人： Thomas Happ , Franz Kreupl , Jan Boris Philipp , Petra Majewski
发明人： Thomas Happ , Franz Kreupl , Jan Boris Philipp , Petra Majewski
CPC分类号： H01L45/1253 , G11C13/0004 , G11C2213/79 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/141 , H01L45/146
摘要： An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.
摘要翻译： 集成电路包括具有电阻变化存储元件的存储单元。 电阻变化存储元件包括第一电极，第二电极和设置在第一和第二电极之间的电阻率变化材料，其中电阻率变化材料被配置为响应于施加电压或电流而改变电阻状态 和第二电极。 此外，第一电极和第二电极中的至少一个包括绝缘体材料，其包括形成在绝缘体材料内的自组装导电元件。 形成在绝缘体材料内的自组装导电元件在将电阻率变化材料切换到不同电阻状态的整个操作期间保持稳定。
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6.发明申请SOLAR CELL ARRAY AND THIN-FILM SOLAR MODULE AND PRODUCTION METHOD THEREFOR 审中-公开太阳能电池阵列和薄膜太阳能电池组件及其制造方法公开(公告)号：US20120285512A1
公开(公告)日：2012-11-15
申请号：US13519578
申请日：2011-01-27
申请人： Jan Boris Philipp , Thomas Happ
发明人： Jan Boris Philipp , Thomas Happ
CPC分类号： H01L31/18 , H01L31/046 , H01L31/0749 , Y02E10/541
摘要： A solar cell array is described which can be designed in particular as a thin-film solar module. A production method for a solar cell array is further described.
摘要翻译： 描述了可以特别设计为薄膜太阳能模块的太阳能电池阵列。 进一步描述太阳能电池阵列的制造方法。
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公开(公告)号：US08250293B2
公开(公告)日：2012-08-21
申请号：US12687951
申请日：2010-01-15
申请人： Thomas Happ , Jan Boris Philipp
发明人： Thomas Happ , Jan Boris Philipp
CPC分类号： G11C11/16 , G11C11/1673 , G11C11/1675 , G11C13/0002 , G11C13/0035 , G11C13/0069
摘要： According to one embodiment of the present invention, a method of operating an integrated circuit including a plurality of resistance changing memory cells grouped into physical memory units is provided. The method includes: Monitoring writing access numbers assigned to the physical memory units, each writing access number reflecting the number of writing accesses to the physical memory unit to which the writing access number is assigned; if the value of a writing access number assigned to a first physical memory unit exceeds a writing access threshold value, a data exchange process is carried out during which the data content stored within the first physical memory unit is exchanged with the data content of a second physical memory unit having a writing access number of a lower value.
摘要翻译： 根据本发明的一个实施例，提供了一种操作集成电路的方法，该集成电路包括分组成物理存储器单元的多个电阻变化存储器单元。 该方法包括：监视分配给物理存储器单元的写入访问号码，每个写入访问号码反映写入访问次数到写入访问号码的物理存储单元; 如果分配给第一物理存储器单元的写访问号码的值超过写访问阈值，则执行数据交换处理，在该数据交换处理期间，存储在第一物理存储单元内的数据内容与第二物理存储单元的数据内容交换 物理存储单元具有较低值的写入访问号。
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8.发明授权Integrated circuit with memory having a step-like programming characteristic 有权具有阶梯状编程特性的具有存储器的集成电路公开(公告)号：US08084799B2
公开(公告)日：2011-12-27
申请号：US11488422
申请日：2006-07-18
申请人： Thomas Happ , Jan Boris Philipp
发明人： Thomas Happ , Jan Boris Philipp
IPC分类号： H01L27/108
CPC分类号： G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2013/009 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a via or trench memory cell.
摘要翻译： 存储单元包括在第一电极和第二电极之间的第一电极，第二电极和相变材料。 相变材料具有阶梯状编程特性。 第一电极，第二电极和相变材料形成通孔或沟槽存储单元。
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公开(公告)号：US08017930B2
公开(公告)日：2011-09-13
申请号：US11643438
申请日：2006-12-21
申请人： Jan Boris Philipp , Thomas Happ
发明人： Jan Boris Philipp , Thomas Happ
IPC分类号： H01L47/00
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： A memory cell includes a first electrode, a storage location, and a second electrode. The storage location includes a phase change material and contacts the first electrode. The storage location has a first cross-sectional width. The second electrode contacts the storage location and has a second cross-sectional width greater than the first cross-sectional width. The first electrode, the storage location, and the second electrode form a pillar phase change memory cell.
摘要翻译： 存储单元包括第一电极，存储位置和第二电极。 存储位置包括相变材料并与第一电极接触。 存储位置具有第一横截面宽度。 第二电极接触存储位置并且具有大于第一横截面宽度的第二横截面宽度。 第一电极，存储位置和第二电极形成柱状相变存储单元。
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公开(公告)号：US07906368B2
公开(公告)日：2011-03-15
申请号：US11771501
申请日：2007-06-29
IPC分类号： H01L21/06
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.
摘要翻译： 本发明的实施例包括形成非易失性相变存储器（PCM）单元的方法。 该方法包括形成至少一个底部电极; 在所述底部电极的上表面的至少一部分上形成至少一个相变材料层; 在所述相变材料层的上表面的至少一部分上形成至少一个加热层; 并且将加热器层成形为锥形，使得加热器层的上表面的横截面宽度大于与相变材料层接触的加热器层的底表面的横截面宽度。
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