公开(公告)号：US20210245077A1

公开(公告)日：2021-08-12

申请号：US16788619

申请日：2020-02-12

Applicant: Tokyo Electron Limited

Inventor： Corey Lemley

IPC: B01D24/38 ,  B01D24/08 ,  B01D29/88

Abstract: An apparatus includes a chemical filter fluidly coupled between a source for a processing solution and a nozzle to dispense the processing solution. The chemical filter is configured to filter the processing solution from the source. The apparatus may include a vacuum pump that is configured to apply a vacuum to the chemical filter. The apparatus may include a valve system configured to operate in a first operating state and a second operating state, where in the first operating state the valve system is configured to couple the source to the chemical filter and block the vacuum to the chemical filter, and where in the second operating state the valve system is configured to couple the vacuum to the chemical filter and block the source to the chemical filter.

公开(公告)号：US20230009688A1

公开(公告)日：2023-01-12

申请号：US17854930

申请日：2022-06-30

Applicant: Tokyo Electron Limited

Inventor： Dina H. Triyoso ,  Lior Huli ,  Corey Lemley ,  Robert D. Clark ,  Gerrit Leusink

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/687

Abstract: A method of processing a substrate that includes: loading the substrate in a processing system, the substrate including a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level; etching the metal to form a recessed metal surface below the dielectric material surface; selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process; and depositing a dielectric film including a second dielectric material on the dielectric material surface.

公开(公告)号：US11460775B2

公开(公告)日：2022-10-04

申请号：US16560776

申请日：2019-09-04

Applicant: Tokyo Electron Limited

Inventor： Hoyoung Kang ,  Anton J. Devilliers ,  Corey Lemley

IPC: G03F7/16 ,  B08B17/02

Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes forming a first material in a first annular region of the front side surface, resulting in the first annular being coated with the first material. The first annular region is immediately adjacent to a perimeter of the substrate. The first annular region has a first outer perimeter proximate to the perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate. The method also includes forming a second material in an interior region of the front side surface, the second material coating the front side surface without adhering to the annular region.

公开(公告)号：US20240149193A1

公开(公告)日：2024-05-09

申请号：US18411963

申请日：2024-01-12

Applicant: Tokyo Electron Limited

Inventor： Corey Lemley

IPC: B01D29/96 ,  B01D29/88 ,  B01D36/00

CPC classification number: B01D29/96 ,  B01D29/88 ,  B01D36/001 ,  B01D2201/165 ,  B01D2201/204 ,  B01D2201/54 ,  B01D2221/14

Abstract: A method of supplying a processing solution includes shutting off a feed line supplying the processing solution to a chemical filter, installing a dry chemical filter in a filter housing of the chemical filter, closing an output line from the filter housing to a nozzle configured to dispense the processing solution (either before or after installing the dry chemical filter), applying a vacuum to the filter housing while the feed line remains shut, and opening the feed line while locking in the vacuum within the filter housing. Shutting off the feed line and closing the output line may be accomplished by closing respective valves. Before installing the dry filter, a valve to the vacuum may be closed. The method may be performed by a processor executing a program stored in a non-transitory computer-readable medium.

公开(公告)号：US20220334485A1

公开(公告)日：2022-10-20

申请号：US17691886

申请日：2022-03-10

Applicant: Tokyo Electron Limited

Inventor： Lior Huli ,  Corey Lemley

IPC: G03F7/16 ,  H01L21/311 ,  G03F7/20

Abstract: A method of processing a wafer that includes: positioning the wafer within a processing chamber, the wafer including a film deposited over a surface of the wafer; rotating the wafer within the processing chamber; mixing a first fluid with a second fluid at a mixing ratio using a dispense nozzle assembly resulting in a fluid mixture; and while rotating the wafer, dispensing the fluid mixture from the dispense nozzle assembly over an edge portion of the wafer to remove a portion of the film on the edge portion of the wafer.

公开(公告)号：US11456185B2

公开(公告)日：2022-09-27

申请号：US16896655

申请日：2020-06-09

Applicant: Tokyo Electron Limited

Inventor： Ryan Burns ,  Mark Somervell ,  Corey Lemley

IPC: H01L21/321 ,  H01L21/467 ,  H01L21/02

Abstract: In certain embodiments, a method for processing a substrate includes applying a surface treatment to selected surfaces of the substrate. The substrate has a non-planar topography including structures defining recesses. The method further includes depositing a fill material on the substrate by spin-on deposition. The surface treatment directs the fill material to the recesses and away from the selected surfaces to fill the recesses with the fill material without adhering to the selected surfaces. The method further includes removing the surface treatment from the selected surfaces of the substrate and depositing a planarizing film on the substrate by spin-on deposition. The planarizing film is deposited on the selected surfaces and top surfaces of the fill material.

公开(公告)号：US10525416B2

公开(公告)日：2020-01-07

申请号：US15661551

申请日：2017-07-27

Applicant: Tokyo Electron Limited

Inventor： Hoyoung Kang ,  Anton deVilliers ,  Corey Lemley

IPC: B01D19/00 ,  B01D65/02 ,  B01D71/36 ,  B01D71/56 ,  B01D63/14 ,  B01D63/06 ,  B01D29/01 ,  B01D29/11 ,  B01D65/00

Abstract: A process is disclosed for wetting a filter cartridge used to treat a liquid solvent used in semiconductor manufacture. In the process, a filter cartridge having void spaces wherein the void spaces contain residual gas from the manufacturing process used to make the filter cartridge is connected to a source of purging gas. The purging gas is flowed through the filter cartridge to at least partially displace at least a portion of the residual gas from the manufacturing process used to make the filter cartridge. Next, liquid solvent is pumped through the filter cartridge so that the purging gas dissolves into the liquid solvent and to at least partially fill the void spaces to thereby at least partially wet out the filter cartridge with the liquid solvent.

公开(公告)号：US20190214256A1

公开(公告)日：2019-07-11

申请号：US16240310

申请日：2019-01-04

Applicant: Tokyo Electron Limited

Inventor： Anton J. deVilliers ,  Corey Lemley

IPC: H01L21/033 ,  H01L21/3105

Abstract: Techniques herein include a method of forming etch masks to form contact holes and other features. Techniques herein use a reversal method to create contact hole patterns with improved critical dimension uniformity and contact edge roughness as compared to traditional direct print photolithography methods. A pillar is printed as an initial structure. The initial structure is reshaped to change smoothness, uniformity, and/or dimensions. A conformal film is deposited on the pillar. The conformal film can include a metal-containing material. A planarization process is executed that removes pillars down to the working surface of the substrate leaving the conformal film on the working surface of the substrate. This conformal film can then be used as an etch mask for additional pattern transfer.

公开(公告)号：US11043378B2

公开(公告)日：2021-06-22

申请号：US16681634

申请日：2019-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Corey Lemley ,  Richard Farrell ,  Hoyoung Kang

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/04

Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.

公开(公告)号：US10734229B2

公开(公告)日：2020-08-04

申请号：US16240310

申请日：2019-01-04

Applicant: Tokyo Electron Limited

Inventor： Anton J. deVilliers ,  Corey Lemley

IPC: H01L21/033 ,  H01L21/3105

Abstract: Techniques herein include a method of forming etch masks to form contact holes and other features. Techniques herein use a reversal method to create contact hole patterns with improved critical dimension uniformity and contact edge roughness as compared to traditional direct print photolithography methods. A pillar is printed as an initial structure. The initial structure is reshaped to change smoothness, uniformity, and/or dimensions. A conformal film is deposited on the pillar. The conformal film can include a metal-containing material. A planarization process is executed that removes pillars down to the working surface of the substrate leaving the conformal film on the working surface of the substrate. This conformal film can then be used as an etch mask for additional pattern transfer.