公开(公告)号：US09558960B2

公开(公告)日：2017-01-31

申请号：US14757850

申请日：2015-12-24

Applicant: Tokyo Electron Limited

Inventor： Takahiro Shiozawa ,  Kenichi Ueda

IPC: H01L21/3105 ,  H01L21/027 ,  H01L21/67 ,  H05B3/00 ,  B05D3/02 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/31058 ,  B05D3/0254 ,  B05D3/0281 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/0273 ,  H01L21/3105 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/6875 ,  H05B3/0047

Abstract: A substrate processing method includes a coating step that applies a coating liquid to a substrate having a front surface on which a pattern is formed, thereby forming a coating film on the substrate, a film removing step that heats the substrate to gasify components of the coating film thereby to reduce a thickness of the film, and a film curing step that is performed after or simultaneously with the film removing step and that heats the substrate to cure the coating film through crosslinking reaction. The film removing step is performed under conditions ensuring that an average thickness of the cured coating film is not greater than 80% of an average thickness of the coating film before being subjected to the film removing step.

Abstract translation: 基板处理方法包括将涂布液涂布到具有图案的正面的基板上的涂布步骤，从而在基板上形成涂膜;膜移除步骤，其加热基板以使涂层的成分气化 膜，从而减小膜的厚度，以及在除膜步骤之后或同时进行的膜固化步骤，并且通过交联反应加热基板以固化涂膜。 膜去除步骤在确保固化涂膜的平均厚度不大于进行膜除去步骤之前的涂膜的平均厚度的80％的条件下进行。

公开(公告)号：US09695513B2

公开(公告)日：2017-07-04

申请号：US14837719

申请日：2015-08-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichi Ueda

IPC: C23C16/52 ,  H01L21/027 ,  H01L21/02 ,  C23C16/46 ,  C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  G03F7/16 ,  H01L21/67

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/463 ,  G03F7/16 ,  H01L21/02304 ,  H01L21/0231 ,  H01L21/0276 ,  H01L21/67109 ,  H01L21/67115

Abstract: A hydrophobization treatment apparatus includes a cooling device which cools a substrate, a light irradiation device which irradiates thermal radiation light from light sources onto front surface of the substrate, a gas supply device which supplies hydrophobization-treatment gas to the substrate, an exhaust device which exhausts the gas, a lifting device which moves the substrate such that the lifting device raises and lowers the substrate between the cooling device and light sources, and a control device which has circuitry to control the light irradiation device, the gas supply device, the exhaust device and the lifting device. The circuitry of the control device executes first gas supply control to discharge and exhaust the gas into and from the space between the gas container and substrate, and after the first control, second gas supply control to discharge and exhaust the gas into and from the space between the gas container and substrate.

公开(公告)号：US09552987B2

公开(公告)日：2017-01-24

申请号：US14297661

申请日：2014-06-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro Miyata ,  Keiichi Tanaka ,  Kenichi Ueda ,  Takahiro Shiozawa

IPC: H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  G03F7/42 ,  H01L21/768

CPC classification number: H01L21/0273 ,  G03F7/422 ,  H01L21/02065 ,  H01L21/31133 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/7684 ,  H01L2224/11916

Abstract: A substrate processing method is performed to improve surface roughness of a pattern mask formed on a substrate by being exposed and developed. The method includes supplying a first solvent in a gaseous state to a surface of the substrate to dissolve the pattern mask, and supplying a second solvent to the surface of the substrate, which is supplied with the first solvent, to dissolve the pattern mask, wherein a permeability of the second solvent is lower than a permeability of the first solvent.

Abstract translation: 进行基板处理方法，以通过曝光和显影来改善形成在基板上的图案掩模的表面粗糙度。 该方法包括将气态的第一溶剂供给到基板的表面以溶解图案掩模，并将第二溶剂供应到提供有第一溶剂的基板的表面以溶解图案掩模，其中 第二溶剂的渗透性低于第一溶剂的渗透性。

公开(公告)号：US20150361559A1

公开(公告)日：2015-12-17

申请号：US14837719

申请日：2015-08-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichi Ueda

IPC: C23C16/52 ,  H01L21/67 ,  C23C16/458 ,  C23C16/46 ,  C23C16/44 ,  H01L21/02 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/463 ,  G03F7/16 ,  H01L21/02304 ,  H01L21/0231 ,  H01L21/0276 ,  H01L21/67109 ,  H01L21/67115

Abstract: A hydrophobization treatment apparatus includes a cooling device which cools a substrate, a light irradiation device which irradiates thermal radiation light from light sources onto front surface of the substrate, a gas supply device which supplies hydrophobization-treatment gas to the substrate, an exhaust device which exhausts the gas, a lifting device which moves the substrate such that the lifting device raises and lowers the substrate between the cooling device and light sources, and a control device which has circuitry to control the light irradiation device, the gas supply device, the exhaust device and the lifting device. The circuitry of the control device executes first gas supply control to discharge and exhaust the gas into and from the space between the gas container and substrate, and after the first control, second gas supply control to discharge and exhaust the gas into and from the space between the gas container and substrate.

Abstract translation: 疏水化处理装置包括冷却基板的冷却装置，将来自光源的热辐射光照射到基板的前表面的光照射装置，向基板供给疏水化处理气体的气体供给装置，排气装置， 排出气体，提升装置使基板移动，使提升装置升高并降低冷却装置与光源之间的基板;以及控制装置，其具有控制光照射装置，气体供给装置，排气的电路 装置和提升装置。 控制装置的电路执行第一气体供给控制，以将气体排出和排出气体容器和基板之间的空间，并且在第一控制之后，第二气体供应控制将气体排出和排出空间 在气体容器和基底之间。

公开(公告)号：US20160189974A1

公开(公告)日：2016-06-30

申请号：US14757850

申请日：2015-12-24

Applicant: Tokyo Electron Limited

Inventor： Takahiro Shiozawa ,  Kenichi Ueda

IPC: H01L21/3105 ,  H01L21/67 ,  H05B3/00 ,  H01L21/027

CPC classification number: H01L21/31058 ,  B05D3/0254 ,  B05D3/0281 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/0273 ,  H01L21/3105 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/6875 ,  H05B3/0047

Abstract: A substrate processing method includes a coating step that applies a coating liquid to a substrate having a front surface on which a pattern is formed, thereby forming a coating film on the substrate, a film removing step that heats the substrate to gasify components of the coating film thereby to reduce a thickness of the film, and a film curing step that is performed after or simultaneously with the film removing step and that heats the substrate to cure the coating film through crosslinking reaction. The film removing step is performed under conditions ensuring that an average thickness of the cured coating film is not greater than 80% of an average thickness of the coating film before being subjected to the film removing step.

Abstract translation: 基板处理方法包括将涂布液涂布到具有图案的正面的基板上的涂布步骤，从而在基板上形成涂膜;膜移除步骤，其加热基板以使涂层的成分气化 膜，从而减小膜的厚度，以及在除膜步骤之后或同时进行的膜固化步骤，并且通过交联反应加热基板以固化涂膜。 膜去除步骤在确保固化涂膜的平均厚度不大于进行膜除去步骤之前的涂膜的平均厚度的80％的条件下进行。