公开(公告)号：US20250046615A1

公开(公告)日：2025-02-06

申请号：US18918152

申请日：2024-10-17

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20230215700A1

公开(公告)日：2023-07-06

申请号：US18121611

申请日：2023-03-15

Applicant: Tokyo Electron Limited

Inventor： Kae KUMAGAI ,  Motoi TAKAHASHI ,  Ryutaro SUDA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Takatoshi ORUI

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32798 ,  H01L21/02164 ,  H01L21/0217 ,  H01J37/32082 ,  H01J37/32458 ,  H01J2237/334

Abstract: A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CxHyFz gas.

公开(公告)号：US20230377850A1

公开(公告)日：2023-11-23

申请号：US18198736

申请日：2023-05-17

Applicant: Tokyo Electron Limited

Inventor： Satoshi OHUCHIDA ,  Masahito YAMAGUCHI ,  Takatoshi ORUI ,  Maju TOMURA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01L21/6831 ,  H01L21/3065 ,  H01J2237/3341

Abstract: The purpose of this disclosure is to provide an etching method. This method includes: (a) providing a substrate on a substrate support in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film, the silicon-containing film including silicon and nitrogen; (b) supplying a process gas to the chamber, the process gas containing a hydrogen fluoride gas and a chlorine-containing gas, where a flow rate of the chlorine-containing gas is 1.5 volume % or more of a total flow of the process gas excluding an inert gas; and (c) generating a plasma from the process gas to etch the silicon-containing film.

公开(公告)号：US20220157610A1

公开(公告)日：2022-05-19

申请号：US17666570

申请日：2022-02-08

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20250096006A1

公开(公告)日：2025-03-20

申请号：US18964049

申请日：2024-11-29

Applicant: Tokyo Electron Limited

Inventor： Rin SASAKI ,  Masanori HOSOYA ,  Yuki CHIBA ,  Shun ITOH ,  Daisuke NISHIDE ,  Takatoshi ORUI ,  Yuto SAITO

IPC: H01L21/311 ,  H01J37/305 ,  H01J37/32

Abstract: A disclosed etching method includes (a) preparing a substrate in a chamber, (b) forming a deposit on the substrate, (c) supplying ions from a plasma generated from the process gas to the deposit to modify the deposit, and (d) etching the dielectric film by using a plasma after (c). The substrate includes a dielectric film and a mask. The deposit is supplied from a plasma generated from a process gas containing a gas component containing fluorine and carbon. A power level of a source radio frequency power in (c) is not higher than a power level of the source radio frequency power in (b). An electric bias has a level in (c) higher than a level of the electric bias in (b), or is not supplied in (b). A level of the electric bias in (d) is higher than the level of the electric bias in (c).

公开(公告)号：US20210143016A1

公开(公告)日：2021-05-13

申请号：US16930483

申请日：2020-07-16

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.

公开(公告)号：US20230215691A1

公开(公告)日：2023-07-06

申请号：US18121608

申请日：2023-03-15

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Takatoshi ORUI ,  Kae KUMAGAI ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32798 ,  H01J2237/334

Abstract: A technique increases verticality in etching. An etching method is a method for etching a target film with a plasma processing apparatus including a chamber and a substrate support located in the chamber to support a substrate, the substrate support holding a substrate that includes the target film, the target film including a patterned mask film having at least one opening. The etching method includes supplying a process gas containing an HF gas into the chamber, and etching the target film by: generating plasma from the process gas in the chamber with radio-frequency power having a first frequency, and applying a pulsed voltage periodically to the substrate support at a second frequency lower than the first frequency.

公开(公告)号：US20230197458A1

公开(公告)日：2023-06-22

申请号：US18113078

申请日：2023-02-23

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20220148884A1

公开(公告)日：2022-05-12

申请号：US17517723

申请日：2021-11-03

Applicant: Tokyo Electron Limited

Inventor： Takatoshi ORUI ,  Ryutaro SUDA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: An etching method that is disclosed includes providing a substrate into a chamber. The substrate has a silicon-containing film including a silicon nitride film. The etching method includes generating plasma from a processing gas in the chamber to etch the silicon-containing film. The processing gas includes a fluorine-containing gas and a boron-containing gas. In the etching, a temperature of a substrate support supporting the substrate is set to a temperature of less than 0° C.

公开(公告)号：US20230307245A1

公开(公告)日：2023-09-28

申请号：US18125206

申请日：2023-03-23

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Atsushi TAKAHASHI ,  Takatoshi ORUI

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32449 ,  H01L21/31144 ,  H01L21/3065 ,  H01J2237/334

Abstract: A plasma processing method executed by a plasma processing apparatus having a chamber is provided. The method includes: (a) providing a substrate having a silicon containing film and a mask on the silicon containing film; and (b) etching the silicon containing film, the (b) including (b-1) etching the silicon containing film by using a plasma generated from a first processing gas containing a hydrogen fluoride gas and a tungsten containing gas, and (b-2) etching the silicon containing film by using a plasma generated from a second processing gas containing a hydrogen fluoride gas, the second processing gas not containing a tungsten containing gas, or containing a tungsten containing gas at a flow ratio smaller than a flow ratio of the tungsten containing gas in the first processing gas.