公开(公告)号：US09741540B2

公开(公告)日：2017-08-22

申请号：US15130188

申请日：2016-04-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke Aoki

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32091 ,  H01J37/32532 ,  H01J37/32559 ,  H01J37/32862

Abstract: In a method for surface treatment of an upper electrode, a first step is performed to roughen a facing surface of the upper electrode facing a lower electrode while depositing a CF-based deposit on the facing surface by using a plasma of a processing gas by supplying a first and second high frequency powers to the lower and upper electrode. A second step is performed to remove a part of the CF-based deposit by using a plasma of a processing gas by supplying the second high frequency power to the upper electrode only, and a third step is performed to remove the CF-based deposit remaining in the second step by using a plasma of a processing gas by supplying the first and second high frequency powers to the lower and upper electrode. Further, the first, second and third steps are repeated multiple times.

公开(公告)号：US11251048B2

公开(公告)日：2022-02-15

申请号：US16896304

申请日：2020-06-09

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Toshikatsu Tobana ,  Fumiya Takata ,  Shinya Morikita ,  Kazunobu Fujiwara ,  Jun Abe ,  Koichi Nagami

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  H05H1/24 ,  C23C16/44

Abstract: A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.

公开(公告)号：US11081351B2

公开(公告)日：2021-08-03

申请号：US16989810

申请日：2020-08-10

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Toshikatsu Tobana ,  Shinya Morikita ,  Satoru Nakamura

IPC: H01L21/027 ,  H01J37/32

Abstract: A disclosed method of processing a substrate includes (a) providing a substrate in a chamber of a plasma processing apparatus. The substrate has a patterned organic mask. The method further includes (b) generating plasma from a processing gas in the chamber in a state where the substrate is accommodated in the chamber. The method further includes (c) periodically applying a pulsed negative direct-current voltage to an upper electrode of the plasma processing apparatus, during execution of the generating plasma (that is, the above (b)). In the applying a pulsed negative direct-current voltage, ions from the plasma are supplied to the upper electrode, so that a silicon-containing material which is released from the upper electrode is deposited on the substrate.

公开(公告)号：US11664263B2

公开(公告)日：2023-05-30

申请号：US17408658

申请日：2021-08-23

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Ryusei Kashimura

IPC: H01L21/683 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01L21/68742

Abstract: A substrate processing method is provided. The method includes a) causing a substrate to be attracted to an electrostatic chuck, and b) processing the substrate. The method includes c) determining a charge removal temperature based on information preliminarily stored in a storage, thereby adjusting a surface temperature of the electrostatic chuck to be greater than or equal to the determined charge removal temperature, the information indicating a relationship between a maximum surface temperature of the electrostatic chuck, during substrate processing, and a residual charge amount for the processed substrate. The method includes d) removing a charge from the processed substrate.

公开(公告)号：US11062882B2

公开(公告)日：2021-07-13

申请号：US16743788

申请日：2020-01-15

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Shinya Morikita ,  Toshikatsu Tobana ,  Fumiya Takata

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a substrate support, an upper electrode, a radio frequency power source, and a direct-current power source device. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The radio frequency power source generates a plasma in the chamber. The direct-current power source device is electrically connected to the upper electrode. The direct-current power source device is configured to periodically generate a pulsed negative direct-current voltage. An output voltage of the direct-current power source device is alternately switched between a negative direct-current voltage and zero volts.

公开(公告)号：US11923229B2

公开(公告)日：2024-03-05

申请号：US17513425

申请日：2021-10-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke Aoki

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32183 ,  H01J37/32449

Abstract: A plasma processing method includes supplying a voltage to an electrode provided in an electrostatic chuck, thereby adsorbing a substrate onto an upper surface of the electrostatic chuck; after the voltage supplied to the electrode of the electrostatic chuck is stabilized, cutting off the supply of the voltage to the electrode, thereby bringing the electrode into a floating state; and after the voltage supplied to the electrode of the electrostatic chuck is stabilized, performing a predetermined processing with plasma on a surface of the substrate adsorbed onto the electrostatic chuck.

公开(公告)号：US11594398B2

公开(公告)日：2023-02-28

申请号：US16790028

申请日：2020-02-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke Aoki ,  Fumiya Takata ,  Toshikatsu Tobana ,  Shinya Morikita ,  Kazunobu Fujiwara ,  Jun Abe ,  Koichi Nagami

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  B08B5/00

Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.