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1.发明授权Electron device manufacturing method, a pattern forming method, and a photomask used for those methods 有权电子器件制造方法，图案形成方法和用于这些方法的光掩模公开(公告)号：US06750000B2
公开(公告)日：2004-06-15
申请号：US10671666
申请日：2003-09-29
IPC分类号： G03F700
CPC分类号： G03F1/30
摘要： A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.
摘要翻译： 公开了一种制造具有微小结构的电子器件的方法，例如使用投影曝光技术和相移掩模技术的半导体集成电路，保持高产率。 在根据本发明的电子器件制造方法中，通过使用具有预定厚度的移相器的掩模通过投影工具在设置在工件表面上的感光膜上印刷遮光膜图案来制造所需的电子器件 部分地形成在透明板的平坦表面上和具有预定图案并由非金属制成的遮光膜部分地设置有覆盖移位器的端部并显影感光膜的膜。 此外，具体地，使用由非金属制成的遮光膜在移位器的表面上部分地延伸的掩模和通过投影工具包括移位器的端部的透明板来打印上述图案。 根据本发明的电子器件制造方法，可以精确地制造具有微小结构的电子器件，保持高产率。
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2.发明授权Electron device manufacturing method, a pattern forming method, and a photomask used for those methods 有权电子器件制造方法，图案形成方法和用于这些方法的光掩模公开(公告)号：US06653052B2
公开(公告)日：2003-11-25
申请号：US09810194
申请日：2001-03-19
IPC分类号： G03F750
CPC分类号： G03F1/30
摘要： A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.
摘要翻译： 公开了一种制造具有微小结构的电子器件的方法，例如使用投影曝光技术和相移掩模技术的半导体集成电路，保持高产率。 在根据本发明的电子器件制造方法中，通过使用具有预定厚度的移相器的掩模通过投影工具在设置在工件表面上的感光膜上印刷遮光膜图案来制造所需的电子器件 部分地形成在透明板的平坦表面上和具有预定图案并由非金属制成的遮光膜部分地设置有覆盖移位器的端部并显影感光膜的膜。 此外，具体地，使用由非金属制成的遮光膜在移位器的表面上部分地延伸的掩模和通过投影工具包括移位器的端部的透明板来打印上述图案。 根据本发明的电子器件制造方法，可以精确地制造具有微小结构的电子器件，保持高产率。
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3.发明授权Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权光掩模，制造方法，图案化方法和半导体器件制造方法公开(公告)号：US06927002B2
公开(公告)日：2005-08-09
申请号：US10026973
申请日：2001-12-27
IPC分类号： G03F7/004 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/40 , G03F1/42 , G03F1/54 , G03F1/56 , G03F1/60 , G03F1/68 , G03F1/70 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译： 为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。 光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。 通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。 在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。
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4.发明授权Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权光掩模，制造方法，图案化方法和半导体器件制造方法公开(公告)号：US06703171B2
公开(公告)日：2004-03-09
申请号：US10072880
申请日：2002-02-12
IPC分类号： G03F900
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译： 为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。 光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。 通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。 在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。
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公开(公告)号：US4835089A
公开(公告)日：1989-05-30
申请号：US60323
申请日：1987-06-10
申请人： Takao Iwayanagi , Norio Hasegawa , Toshihiko Tanaka , Hiroshi Shiraishi , Takumi Ueno , Michiaki Hashimoto , Seiichiro Shirai , Kazuya Kadota
发明人： Takao Iwayanagi , Norio Hasegawa , Toshihiko Tanaka , Hiroshi Shiraishi , Takumi Ueno , Michiaki Hashimoto , Seiichiro Shirai , Kazuya Kadota
IPC分类号： G03F7/095
CPC分类号： G03F7/095
摘要： A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.
摘要翻译： 在其表面上具有表层水平的基底上形成含有芳族双叠氮化物和/或芳族磺酰基叠氮化合物的厚聚合物膜，以使所述表面变平，然后加热或将其整个表面曝光。 在聚合物膜上形成具有高于聚合物的耐干蚀刻性的掩模图案，通过干蚀刻除去聚合物膜的暴露部分，并除去待处理的膜的暴露部分以形成图案。
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公开(公告)号：US5328807A
公开(公告)日：1994-07-12
申请号：US711954
申请日：1991-06-07
申请人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
发明人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
CPC分类号： G03F1/34 , G03F7/2022
摘要： A comb-like or dot-like phase shifter pattern is added to a phase shifter used in phase shifting mask technology, which is then exposed onto a wafer. This enables the formation of extremely fine line patterns or space patterns having widths different from each other simultaneously. Further, when two reticles are disposed such that phase shifter patterns disposed therein intersect each other and are exposed consecutively onto a wafer, a fine hole pattern or dot pattern can be formed at a position where the phase shifter patterns intersect each other.
摘要翻译： 将梳状或点状移相器图案添加到用于相移掩模技术的移相器中，然后将其暴露在晶片上。 这使得能够同时形成彼此宽度不同的极细线图案或空间图案。 此外，当两个掩模版被布置成使得设置在其中的移相器图案彼此相交并且连续地暴露在晶片上时，可以在移相器图案彼此相交的位置处形成细孔图案或点图案。
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公开(公告)号：US06936406B2
公开(公告)日：2005-08-30
申请号：US10364702
申请日：2003-02-12
申请人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
发明人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
CPC分类号： G03F1/56 , G03F1/70 , G03F7/0035 , G03F7/70433 , G03F7/707 , H01L21/0274 , Y10S438/942 , Y10S438/945 , Y10S438/948 , Y10S438/95
摘要： In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
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公开(公告)号：US06667135B2
公开(公告)日：2003-12-23
申请号：US09953962
申请日：2001-09-18
IPC分类号： G03F900
摘要： After a shade pattern constituted by a resist film formed on a photomask is stripped, a new shade pattern constituted by a resist film is formed on the photomask to reclaim a photomask.
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公开(公告)号：USRE38296E1
公开(公告)日：2003-11-04
申请号：US08408788
申请日：1995-03-23
申请人： Noboru Moriuchi , Yoshiki Yamaguchi , Toshihiko Tanaka , Norio Hasegawa , Yoshifumi Kawamoto , Shin-ichiro Kimura , Toru Kaga , Tokuo Kure
发明人： Noboru Moriuchi , Yoshiki Yamaguchi , Toshihiko Tanaka , Norio Hasegawa , Yoshifumi Kawamoto , Shin-ichiro Kimura , Toru Kaga , Tokuo Kure
IPC分类号： H01L27108
CPC分类号： H01L27/10808 , H01L27/105 , H01L27/10852
摘要： A semiconductor memory wherein a memory cell region having a plurality of memory cells and a relatively high altitude above the surface of semiconductor substrate is formed at a recessed part of the semiconductor substrate having the recessed part and a projected part, and wherein a peripheral circuit region having a comparatively low altitude from the surface of the semiconductor substrate is formed at the projected part of the semiconductor substrate.
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公开(公告)号：US06617265B2
公开(公告)日：2003-09-09
申请号：US09927318
申请日：2001-08-13
申请人： Toshihiko Tanaka , Norio Hasegawa
发明人： Toshihiko Tanaka , Norio Hasegawa
IPC分类号： H01L2131
CPC分类号： G03F1/56 , H01L21/0276
摘要： A resist mask having a satisfactory resolution effect may be obtained even in the case of use of exposure light having a wavelength of 200 nm or more. An opaque pattern 2a comprising an organic layer for transferring a pattern is constituted by a multi-layer formed by a photo-absorptive organic layer 3a having an light shielding effect or a light attenuating effect even relative to exposure light having a wavelength of 200 nm or more, and a resist layer 4a for chiefly patterning this.
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