公开(公告)号：US09825039B1

公开(公告)日：2017-11-21

申请号：US15296922

申请日：2016-10-18

Applicant: United Microelectronics Corp.

Inventor： Po-Hsieh Lin ,  Yi-Chuen Eng ,  Szu-Hao Lai ,  Ming-Chih Chen

IPC: H01L29/66 ,  H01L27/108 ,  H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L21/8234

CPC classification number: H01L27/10802 ,  H01L21/823431 ,  H01L21/823487 ,  H01L27/088 ,  H01L27/10844 ,  H01L27/10873 ,  H01L29/78642

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor body, a first doped region, a second doped region, a gate and a dielectric layer. The semiconductor body is disposed on a dielectric substrate and has a protrusion portion, a first portion and a second portion. The first portion and the second portion are respectively disposed at two opposite sides of the protrusion portion. The first doped region is disposed in a top of the protrusion portion. The second doped region is disposed in an end of the first portion far away from the protrusion portion. The gate is disposed on the first portion and adjacent to the protrusion portion. The dielectric layer is disposed between the gate and the protrusion portion, and between the gate and the first portion.

公开(公告)号：US20140295629A1

公开(公告)日：2014-10-02

申请号：US13850887

申请日：2013-03-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsai-Yu Wen ,  Tsuo-Wen Lu ,  Yu-Ren Wang ,  Chin-Cheng Chien ,  Tien-Wei Yu ,  Hsin-Kuo Hsu ,  Yu-Shu Lin ,  Szu-Hao Lai ,  Ming-Hua Chang

IPC: H01L21/8238

CPC classification number: H01L21/823814 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  Y10S438/938

Abstract: A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.

Abstract translation: 公开了一种形成半导体器件的方法。 至少一个栅极结构设置在衬底上，其中栅极结构包括形成在栅极的侧壁上的第一间隔物。 在覆盖栅极结构的衬底上沉积第一一次性间隔物层。 第一一次性间隔物材料层被蚀刻以在第一间隔物上形成第一一次性间隔物。 在覆盖栅极结构的衬底上沉积第二一次性间隔物材料层。 蚀刻第二一次性间隔材料层以在第一一次性间隔件上形成第二一次性间隔件。 通过使用第一和第二一次性间隔件作为掩模来去除衬底的一部分，以在栅极结构旁边的衬底中形成两个凹部。 在凹部中形成应力诱导层。

公开(公告)号：US20150263170A1

公开(公告)日：2015-09-17

申请号：US14723447

申请日：2015-05-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Hua Chang ,  Chun-Yuan Wu ,  Chin-Cheng Chien ,  Tien-Wei Yu ,  Yu-Shu Lin ,  Szu-Hao Lai

IPC: H01L29/78 ,  H01L29/08 ,  H01L21/306 ,  H01L21/324 ,  H01L29/66 ,  H01L29/161

CPC classification number: H01L29/7848 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3003 ,  H01L21/30604 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636

Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

Abstract translation: 半导体工艺包括以下步骤。 在基板上形成两个栅极。 在栅极旁边的基板中形成凹部。 在凹部的表面上进行表面改性处理，以改变凹部的形状并改变表面的内容物。

公开(公告)号：US09263579B2

公开(公告)日：2016-02-16

申请号：US14723447

申请日：2015-05-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Hua Chang ,  Chun-Yuan Wu ,  Chin-Cheng Chien ,  Tien-Wei Yu ,  Yu-Shu Lin ,  Szu-Hao Lai

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/30 ,  H01L29/66 ,  H01L29/165 ,  H01L21/306 ,  H01L21/324 ,  H01L29/08 ,  H01L29/161

CPC classification number: H01L29/7848 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3003 ,  H01L21/30604 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636

Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

公开(公告)号：US09076652B2

公开(公告)日：2015-07-07

申请号：US13902870

申请日：2013-05-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Hua Chang ,  Chun-Yuan Wu ,  Chin-Cheng Chien ,  Tien-Wei Yu ,  Yu-Shu Lin ,  Szu-Hao Lai

IPC: H01L21/20 ,  H01L21/02

CPC classification number: H01L29/7848 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3003 ,  H01L21/30604 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636

Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

Abstract translation: 半导体工艺包括以下步骤。 在基板上形成两个栅极。 在栅极旁边的基板中形成凹部。 在凹部的表面上进行表面改性处理，以改变凹部的形状并改变表面的内容物。

公开(公告)号：US09034705B2

公开(公告)日：2015-05-19

申请号：US13850887

申请日：2013-03-26

Applicant: United Microelectronics Corp.

Inventor： Tsai-Yu Wen ,  Tsuo-Wen Lu ,  Yu-Ren Wang ,  Chin-Cheng Chien ,  Tien-Wei Yu ,  Hsin-Kuo Hsu ,  Yu-Shu Lin ,  Szu-Hao Lai ,  Ming-Hua Chang

IPC: H01L21/8238 ,  H01L21/8234

CPC classification number: H01L21/823814 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  Y10S438/938

Abstract: A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.

Abstract translation: 公开了一种形成半导体器件的方法。 至少一个栅极结构设置在衬底上，其中栅极结构包括形成在栅极的侧壁上的第一间隔物。 在覆盖栅极结构的衬底上沉积第一一次性间隔物层。 第一一次性间隔物材料层被蚀刻以在第一间隔物上形成第一一次性间隔物。 在覆盖栅极结构的衬底上沉积第二一次性间隔物材料层。 蚀刻第二一次性间隔材料层以在第一一次性间隔件上形成第二一次性间隔件。 通过使用第一和第二一次性间隔件作为掩模来去除衬底的一部分，以在栅极结构旁边的衬底中形成两个凹部。 在凹部中形成应力诱导层。

公开(公告)号：US20140349467A1

公开(公告)日：2014-11-27

申请号：US13902870

申请日：2013-05-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Hua Chang ,  Chun-Yuan Wu ,  Chin-Cheng Chien ,  Tien-Wei Yu ,  Yu-Shu Lin ,  Szu-Hao Lai

IPC: H01L21/02

CPC classification number: H01L29/7848 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3003 ,  H01L21/30604 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636

Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

Abstract translation: 半导体工艺包括以下步骤。 在基板上形成两个栅极。 在栅极旁边的基板中形成凹部。 在凹部的表面上进行表面改性处理，以改变凹部的形状并改变表面的内容物。

公开(公告)号：US08853060B1

公开(公告)日：2014-10-07

申请号：US13902862

申请日：2013-05-27

Applicant: United Microelectronics Corp.

Inventor： Szu-Hao Lai ,  Chun-Yuan Wu ,  Chin-Cheng Chien ,  Tien-Wei Yu ,  Ming-Hua Chang ,  Yu-Shu Lin ,  Tsai-Yu Wen ,  Hsin-Kuo Hsu

IPC: H01L21/20 ,  H01L21/02

CPC classification number: H01L21/02532 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

Abstract: An epitaxial process includes the following step. A recess is formed in a substrate. A seeding layer is formed to cover a surface of the recess. A buffer layer is formed on the seeding layer. An etching process is performed on the buffer layer to homogenize and shape the buffer layer. An epitaxial layer is formed on the homogenized flat bottom shape buffer layer.

Abstract translation: 外延工艺包括以下步骤。 在基板上形成凹部。 形成接合层以覆盖凹部的表面。 在接种层上形成缓冲层。 对缓冲层进行蚀刻处理，使缓冲层均匀化并形成。 在均质化的平底形状缓冲层上形成外延层。