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    MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
    1.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE 有权

    公开(公告)号：US20240387239A1

    公开(公告)日：2024-11-21

    申请号：US18209488

    申请日：2023-06-14

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Po-Tsang Chen ,  Chia-Ching Lin ,  Wen-Liang Huang

    IPC: H01L21/762 ,  H01L21/8234 ,  H01L29/66

    Abstract: A manufacturing method of a semiconductor structure includes the following steps. Fin-shaped structures are formed by patterning a first region of a semiconductor substrate. A first shallow trench is formed in a second region of the semiconductor substrate. A part of the semiconductor substrate is exposed by a bottom of the first shallow trench. A first etching process is performed. At least a part of one of the fin-shaped structures is removed by the first etching process, and the part of the semiconductor substrate exposed by the first shallow trench is partially removed by the first etching process for forming a first deep trench. The manufacturing method of the present invention may be used to achieve the purposes of process simplification and/or manufacturing cost reduction.

    Patterning method
    3.
    发明授权
    Patterning method 有权
    图案化方法

    公开(公告)号：US09136140B2

    公开(公告)日：2015-09-15

    申请号：US14025524

    申请日：2013-09-12

    Applicant: United Microelectronics Corp.

    Inventor： Wen-Liang Huang ,  Chia-Hung Lin ,  Chun-Chi Yu

    IPC: H01L21/00 ,  H01L21/308

    CPC classification number: H01L21/3086 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/3088

    Abstract: A patterning method is provided. First, a material layer is formed over a substrate. Thereafter, a plurality of directed self-assembly (DSA) patterns are formed on the material layer. Afterwards, a patterned photoresist layer is formed by using a single lithography process. The patterned photoresist layer covers a first portion of the DSA patterns and exposes a second portion of the DSA patterns. Further, the material layer is patterned by an etching process, using the patterned photoresist layer and the second portion of the DSA patterns as a mask.

    Abstract translation: 提供了图案化方法。 首先，在基板上形成材料层。 此后，在材料层上形成多个定向自组装（DSA）图案。 之后，通过使用单个光刻工艺形成图案化的光致抗蚀剂层。 图案化的光致抗蚀剂层覆盖DSA图案的第一部分并且暴露DSA图案的第二部分。 此外，通过蚀刻工艺，使用图案化的光致抗蚀剂层和DSA图案的第二部分作为掩模来对材料层进行图案化。

    OVERLAY MARK AND MEASUREMENT METHOD THEREOF
    6.
    发明申请
    OVERLAY MARK AND MEASUREMENT METHOD THEREOF 有权
    覆盖标记及其测量方法

    公开(公告)号：US20140132283A1

    公开(公告)日：2014-05-15

    申请号：US13674704

    申请日：2012-11-12

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Kuo-Chun Huang ,  Chien-Hao Chen ,  Wen-Liang Huang

    IPC: G01R27/26 ,  G01R27/02

    CPC classification number: G01R27/2605 ,  G01R27/02 ,  G03F1/38 ,  G03F1/42 ,  G03F7/70616 ,  G03F7/70633 ,  G06T2207/30148

    Abstract: An overlay mark including at least one first overlay mark and at least one second overlay mark is provided. The first overlay mark includes a plurality of first bars and a plurality of first spaces arranged alternately, and the first spaces are not constant. The second overlay mark includes a plurality of second bars and a plurality of second spaces arranged alternately, and the second spaces are constant. Besides, the second overlay mark partially overlaps with the first overlay mark.

    Abstract translation: 提供了包括至少一个第一重叠标记和至少一个第二重叠标记的重叠标记。 第一覆盖标记包括多个第一条和交替布置的多个第一空间，并且第一空间不是恒定的。 第二覆盖标记包括多个第二条和交替排列的多个第二空间，第二空间是恒定的。 此外，第二覆盖标记部分地与第一覆盖标记重叠。

    Photomask and fabrication method thereof
    7.
    发明授权
    Photomask and fabrication method thereof 有权
    光掩模及其制造方法

    公开(公告)号：US09304389B2

    公开(公告)日：2016-04-05

    申请号：US14067986

    申请日：2013-10-31

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： En-Chiuan Liou ,  Sho-Shen Lee ,  Wen-Liang Huang ,  Chang-Mao Wang ,  Kai-Lin Chuang

    IPC: G03F1/68 ,  G03F1/00

    CPC classification number: G03F1/00 ,  G03F1/50 ,  G03F1/68

    Abstract: A photomask including first opaque patterns and second opaque patterns is provided. The first opaque patterns are distributed in a first plane defined in the photomask, while the second opaque patterns are disposed above the first opaque patterns and spaced apart from the first opaque patterns. In other words, the first opaque pattern and second opaque pattern are not distributed in the same plane.

    Abstract translation: 提供包括第一不透明图案和第二不透明图案的光掩模。 第一不透明图案分布在光掩模中限定的第一平面中，而第二不透明图案设置在第一不透明图案之上并与第一不透明图案隔开。 换句话说，第一不透明图案和第二不透明图案不分布在同一平面中。

    PHOTOMASK AND FABRICATION METHOD THEREOF
    8.
    发明申请
    PHOTOMASK AND FABRICATION METHOD THEREOF 有权
    光电及其制造方法

    公开(公告)号：US20150118602A1

    公开(公告)日：2015-04-30

    申请号：US14067986

    申请日：2013-10-31

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： En-Chiuan Liou ,  Sho-Shen Lee ,  Wen-Liang Huang ,  Chang-Mao Wang ,  Kai-Lin Chuang

    IPC: G03F1/00 ,  G03F7/20 ,  G03F1/68

    CPC classification number: G03F1/00 ,  G03F1/50 ,  G03F1/68

    Abstract: A photomask including first opaque patterns and second opaque patterns is provided. The first opaque patterns are distributed in a first plane defined in the photomask, while the second opaque patterns are disposed above the first opaque patterns and spaced apart from the first opaque patterns. In other words, the first opaque pattern and second opaque pattern are not distributed in the same plane.

    Abstract translation: 提供包括第一不透明图案和第二不透明图案的光掩模。 第一不透明图案分布在光掩模中限定的第一平面中，而第二不透明图案设置在第一不透明图案之上并与第一不透明图案间隔开。 换句话说，第一不透明图案和第二不透明图案不分布在同一平面中。

    Calculation method for generating layout pattern in photomask
    9.
    发明授权
    Calculation method for generating layout pattern in photomask 有权
    在光掩模中生成布局图案的计算方法

    公开(公告)号：US08954919B1

    公开(公告)日：2015-02-10

    申请号：US14069391

    申请日：2013-11-01

    Applicant: United Microelectronics Corp.

    Inventor： En-Chiuan Liou ,  Sho-Shen Lee ,  Wen-Liang Huang ,  Chang-Mao Wang ,  Kai-Lin Chuang ,  Yu-Chin Huang

    IPC: G06F17/50

    CPC classification number: G03F1/70

    Abstract: A calculation method for generating a layout pattern in a photomask includes at least the following steps. A two-dimensional design layout including several geometric patterns distributed in a plane is provided to a computer system. The computer system is used to mark portions of the geometric patterns and generate at least one marked geometric pattern and at least one non-marked geometric pattern. The marked geometric pattern is then simulated and corrected by the computer system so as to generate a 3-D design layout. Through the simulation and correction, the marked geometric pattern and the non-marked geometric pattern are arranged alternately along an axis orthogonal to the plane. The 3-D design layout is outputted to a mask-making system afterwards.

    Abstract translation: 用于生成光掩模中的布局图案的计算方法至少包括以下步骤。 将包括分布在平面中的几个几何图案的二维设计布局提供给计算机系统。 计算机系统用于标记几何图案的部分并且生成至少一个标记的几何图案和至少一个未标记的几何图案。 然后通过计算机系统模拟和校正标记的几何图案，以生成3维设计布局。 通过模拟和校正，标记的几何图案和未标记的几何图案沿着与平面正交的轴线交替布置。 3-D设计布局随后输出到制版系统。

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