公开(公告)号：US09356190B2

公开(公告)日：2016-05-31

申请号：US14536713

申请日：2014-11-10

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jiansen Zheng ,  Suhui Lin ,  Kangwei Peng ,  Lingyuan Hong ,  Lingfeng Yin

IPC: H01L33/10 ,  H01L33/46 ,  H01L33/32 ,  H01L33/14

CPC classification number: H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/46

Abstract: A GaN-based LED includes: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution; and a second reflecting layer over the back side the substrate. The band-shaped or annular distribution can increase a probability light extraction of the LED sideways. By controlling the ratio of lights extracted upwards and sideways, the light-emitting distribution evenness can be adjusted and the uneven heat dissipation can be improved.

Abstract translation: GaN基LED包括：具有正面和背面的基板; 外延层，形成在所述基板的前侧，并且从上到下包括P型层，发光区域和N型层; 形成在P型层上的电流扩散层; 形成在电流扩展层上的P电极; 在所述电流扩展层和所述外延层之间的第一反射层，设置在所述外延层的外围区域的带状分布中; 以及在衬底的背侧上的第二反射层。 带状或环形分布可以增加侧向LED的概率光提取。 通过控制向上和向侧提取的光的比例，可以调节发光分布均匀性并且可以提高不均匀的散热。

公开(公告)号：US09190572B2

公开(公告)日：2015-11-17

申请号：US14718026

申请日：2015-05-20

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Lingfeng Yin ,  Suhui Lin ,  Jiansen Zheng ,  Lingyuan Hong ,  Chuangui Liu ,  Yide Ou ,  Gong Chen

IPC: H01L33/42 ,  C23C14/35 ,  H01L33/38 ,  H01L33/00 ,  C23C14/58 ,  C23C14/02

CPC classification number: H01L33/42 ,  C23C14/024 ,  C23C14/086 ,  C23C14/24 ,  C23C14/35 ,  C23C14/58 ,  C23C14/5806 ,  H01L33/005 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: A light emitting diode includes: a substrate; a light-emitting epitaxial layer, from bottom to up, laminated by semiconductor material layers of a first confinement layer, a light-emitting layer and a second confinement layer over the substrate; a current blocking layer over partial region of the light-emitting epitaxial layer; a transparent conducting structure over the current blocking layer that extends to the light-emitting epitaxial layer surface and is divided into a light-emitting region and a non-light-emitting region, in which, the non-light-emitting region corresponds to the current blocking layer with thickness larger than that of the light-emitting region, thus forming a good ohmic contact between this structure and the light-emitting epitaxial layer and reducing light absorption; and a P electrode over the non-light-emitting region of the transparent conducting structure, which guarantees current spreading performance and reduces working voltage and light absorption.

Abstract translation: 发光二极管包括：基板; 从底部到顶部的发光外延层，通过基板上的第一限制层，发光层和第二限制层的半导体材料层层叠; 在发光外延层的部分区域上的电流阻挡层; 在电流阻挡层上延伸到发光外延层表面并被分成发光区域和非发光区域的透明导电结构，其中非发光区域对应于 电流阻挡层的厚度大于发光区域的电流阻挡层，从而在该结构和发光外延层之间形成良好的欧姆接触并降低光吸收; 以及在透明导电结构的非发光区域上的P电极，其保证电流扩展性能并降低工作电压和光吸收。

公开(公告)号：US20190115511A1

公开(公告)日：2019-04-18

申请号：US16147604

申请日：2018-09-29

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Su-Hui Lin ,  Lingyuan Hong ,  SHENG-HSIEN HSU ,  Sihe CHEN ,  Dazhong CHEN ,  Gong CHEN ,  CHIA-HUNG CHANG ,  KANG-WEI PENG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L27/15

Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

公开(公告)号：US20240413291A1

公开(公告)日：2024-12-12

申请号：US18811718

申请日：2024-08-21

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Su-Hui Lin ,  Lingyuan Hong ,  SHENG-HSIEN HSU ,  Sihe CHEN ,  Dazhong CHEN ,  Gong CHEN ,  CHIA-HUNG CHANG ,  KANG-WEI PENG

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42

Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

公开(公告)号：US09190395B2

公开(公告)日：2015-11-17

申请号：US14536324

申请日：2014-11-07

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jiansen Zheng ,  Suhui Lin ,  Kangwei Peng ,  Lingyuan Hong ,  Anhe He

IPC: H01L25/13 ,  H01L33/10 ,  H01L33/40 ,  H01L33/60 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L25/13 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/405 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A GaN-based LED includes a substrate; an epitaxial layer over the substrate; a current spreading layer over a P-type layer; and a P electrode over the current spreading layer. The epitaxial layer includes the P-type layer, a light-emitting area, and an N-type layer. An annular reflecting layer and a metal reflecting layer are formed between the P electrode and the epitaxial layer. The geometric center vertically corresponds to the P electrode; the annular reflecting layer is formed between the current spreading layer and the P-type layer; the metal reflecting layer is formed between the current spreading layer and the P electrode; and a preset distance is arranged between the annular reflecting layer and the metal reflecting layer. The annular reflecting layer and the metal reflecting layer reduce light absorption of the P electrode and improve light extraction efficiency.

Abstract translation: GaN基LED包括基板; 衬底上的外延层; 在P型层上的电流扩散层; 以及在电流扩展层上的P电极。 外延层包括P型层，发光区域和N型层。 在P电极和外延层之间形成环形反射层和金属反射层。 几何中心垂直对应于P电极; 环形反射层形成在电流扩散层和P型层之间; 金属反射层形成在电流扩散层和P电极之间; 并且在环形反射层和金属反射层之间设置预设距离。 环形反射层和金属反射层减少了P电极的光吸收，提高了光提取效率。