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    Method of and system for exposing pattern on object by charged particle beam
    1.
    发明授权
    Method of and system for exposing pattern on object by charged particle beam 失效
    通过带电粒子束对物体曝光图案的方法和系统

    公开(公告)号：US5841145A

    公开(公告)日：1998-11-24

    申请号：US610350

    申请日：1996-03-04

    申请人： Takamasa Satoh ,  Yoshihisa Oae ,  Soichiro Arai ,  Kenichi Miyazawa ,  Hiroshi Yasuda ,  Manabu Ohno ,  Hitoshi Watanabe ,  Junichi Kai ,  Tomohiko Abe ,  Akio Yamada ,  Yasushi Takahashi

    发明人： Takamasa Satoh ,  Yoshihisa Oae ,  Soichiro Arai ,  Kenichi Miyazawa ,  Hiroshi Yasuda ,  Manabu Ohno ,  Hitoshi Watanabe ,  Junichi Kai ,  Tomohiko Abe ,  Akio Yamada ,  Yasushi Takahashi

    IPC分类号： H01J37/302

    CPC分类号： H01J37/3023 ,  H01J2237/3175

    摘要： By using a blanking aperture array BAA, the density of the bit map data in the portions where adjacent areas are linked is decreased toward the outside. On the lower surface of the holder of the BAA chip, a ball grid array wired to blanking electrodes is formed, to be pressed in contact against pads on a wiring base board. The registered bit map data for an isosceles right triangle are read out from address A=A0+�RA.multidot.i! (A0 and i are integers, � ! is an operator for integerizing), masked, and then shifted by bits to be deformed. From registered bit map data for proximity effect correction, the area which corresponds to the size of the object of correction and the required degree of proximity affect correction is extracted, and logic operation with the bit map data of the object of correction is performed to achieve proximity affect correction. Before figures data are expanded into bit map, a checksum is determined in units of bit map data corresponding to the range of one session of scanning over which continuous exposure is possible. A sine wave voltage is provided to an electrostatic deflector and during a one-shot exposure period, an electron beam is caused to scan for an integer number of times on a block of a mask and the positional misalignment of the electron beam at the lower aperture stop is corrected.

    摘要翻译： 通过使用消隐孔径阵列BAA，相邻区域连接的部分中的位图数据的密度朝向外部减小。 在BAA芯片的保持器的下表面上形成布线到消隐电极的球栅阵列，以与接线基板上的焊盘压接。 从地址A = A0 + [RAxi]（A0和i是整数，[]是整数化的运算符）读出等腰直角三角形的注册位图数据，被屏蔽，然后移位以变形。 从用于邻近效应校正的注册位图数据中，提取对应于校正对象的大小的区域和所需的邻近度影响校正程度，并且执行校正对象的位图数据的逻辑运算以实现 近距离影响校正。 在将图形数据扩展为位图之前，以对应于可能进行连续曝光的一次扫描会话的范围的位图数据为单位确定校验和。 向静电偏转器提供正弦波电压，并且在单次曝光期间，使电子束在掩模块上扫描整数次，并且使电子束在下孔处的位置偏移 停止更正。

    Electron beam exposure process for writing a pattern on an object by an electron beam with a compensation of the proximity effect
    5.
    发明授权
    Electron beam exposure process for writing a pattern on an object by an electron beam with a compensation of the proximity effect 失效
    电子束曝光过程，用于通过电子束在邻近效应的补偿上将图案写在物体上

    公开(公告)号：US5278419A

    公开(公告)日：1994-01-11

    申请号：US925110

    申请日：1992-08-06

    申请人： Yasushi Takahashi ,  Hiroshi Yasuda

    发明人： Yasushi Takahashi ,  Hiroshi Yasuda

    IPC分类号： G03F7/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30

    CPC分类号： H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31769

    摘要： A method for writing a pattern on an object by a charged particle beam comprises the steps of: dividing a pattern to be written on the object into a plurality of pattern blocks that cause a proximity effect with each other; determining a pattern density for each of said pattern blocks; selecting a specific pattern block as a reference pattern block; setting a dose level of exposure of the charged particle beam to a reference dose level such that the reference pattern block is exposed with a predetermined total dose level which includes the contribution of the exposure by the charged particle beam and the contribution of the exposure by the backscattered charged particles; exposing the plurality of pattern blocks including the reference pattern block by the charged particle beam with the reference dose level; and exposing those pattern blocks that have the pattern density smaller than the pattern density of the reference pattern block by a defocused charged particle beam with a total dose level set such that the total dose level for those pattern blocks is substantially identical with the total dose level of the reference pattern block.

    摘要翻译： 通过带电粒子束在物体上写入图案的方法包括以下步骤：将要写入对象的图案划分成彼此相互接近效应的多个图案块; 确定每个所述图案块的图形密度; 选择特定图案块作为参考图案块; 将带电粒子束的剂量水平设置为参考剂量水平，使得参考图案块以预定的总剂量水平曝光，该预定总剂量水平包括通过带电粒子束的曝光的贡献以及曝光的贡献 反向散射带电粒子; 通过具有参考剂量水平的带电粒子束曝光包括参考图案块的多个图案块; 并且将具有小于参考图案块的图案密度的图案密度的那些图案块通过设定为使得这些图案块的总剂量水平与总剂量水平基本相同的总剂量水平的散焦带电粒子束曝光 的参考图案块。

    Charged particle beam exposure apparatus and method of cleaning the same
    6.
    发明授权
    Charged particle beam exposure apparatus and method of cleaning the same 失效
    带电粒子束曝光装置及其清洗方法

    公开(公告)号：US5401974A

    公开(公告)日：1995-03-28

    申请号：US191458

    申请日：1994-02-03

    申请人： Yoshihisa Oae ,  Takamasa Satoh ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Hiroshi Yasuda ,  Soichiro Arai ,  Moritaka Nakamura

    发明人： Yoshihisa Oae ,  Takamasa Satoh ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Hiroshi Yasuda ,  Soichiro Arai ,  Moritaka Nakamura

    IPC分类号： H01J37/30 ,  H05H1/00

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3002 ,  H01J37/32082 ,  H01J37/32862 ,  H01J2237/022 ,  H01J2237/3175

    摘要： In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.

    摘要翻译： 在带电粒子束曝光装置中，带电粒子束投射到待暴露的构件上，从而在其上形成图案，设置有围绕带电粒子束的光轴设置的多个电极，第一单元， 将含有氧的气体作为主要成分引入到包括多个电极的带电粒子束曝光设备的内部，并将设备内部保持在0.1托和4托之间的真空度，以及用于选择性地将第二单元 将频率在100kHz和800kHz之间的高频信号或参考信号施加到多个电极中的每一个。 在装置的内部产生气体的等离子体自由基状态，从而可以消除装置中存在的沉积物。

    Blanking aperture array and charged particle beam exposure method
    7.
    发明授权
    Blanking aperture array and charged particle beam exposure method 失效
    消隐孔径阵列和带电粒子束曝光方法

    公开(公告)号：US5262341A

    公开(公告)日：1993-11-16

    申请号：US991718

    申请日：1992-12-16

    申请人： Shunsuke Fueki ,  Hiroshi Yasuda ,  Kiichi Sakamoto ,  Yasushi Takahashi

    发明人： Shunsuke Fueki ,  Hiroshi Yasuda ,  Kiichi Sakamoto ,  Yasushi Takahashi

    IPC分类号： H01J37/04 ,  H01J37/302 ,  H01L21/268

    CPC分类号： H01J37/045 ,  H01J37/3026

    摘要： A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is related to a pattern which is to be exposed using the blanking aperture array.

    摘要翻译： 用于带电粒子束曝光的消隐孔径阵列具有衬底，至少m行×n列的孔在衬底中二维布置，其中每个孔具有一对消隐电极，m和n是整数 大于1和n个m位移位寄存器，其设置在基板上，用于将第n列中的孔的m对对的图案数据施加电压，其中i = 1,2。 。 。 ，n。 图案数据与使用消隐孔径阵列曝光的图案有关。

    Method and apparatus for detecting alignment mark of semiconductor device
    10.
    发明授权
    Method and apparatus for detecting alignment mark of semiconductor device 失效
    用于检测半导体器件的对准标记的方法和装置

    公开(公告)号：US5004925A

    公开(公告)日：1991-04-02

    申请号：US489224

    申请日：1990-03-06

    申请人： Yasushi Takahashi ,  Hiroshi Yasuda

    发明人： Yasushi Takahashi ,  Hiroshi Yasuda

    IPC分类号： H01L21/027 ,  H01J37/304

    CPC分类号： H01J37/3045

    摘要： In a semiconductor device having a leveling metal layer for forming a flat surface on an alignment mark of a level-difference, charged particles are irradiated and scanned onto a region of the alignment mark, and information generated from the region of the alignment mark in accordance with the thickness of metal of a metal leveling-layer in the level-difference of the alignment mark is detected. Therefore, even when the alignment mark formed by the level-difference in the semiconductor device is buried under the leveling metal layer, the alignment mark can be detected exactly without adding excessive processes.