公开(公告)号：US07666766B2

公开(公告)日：2010-02-23

申请号：US11526097

申请日：2006-09-25

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： H01L21/20 ,  C23C16/54

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US07985664B2

公开(公告)日：2011-07-26

申请号：US12627473

申请日：2009-11-30

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： H01L21/20 ,  C23C16/54

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US08192545B2

公开(公告)日：2012-06-05

申请号：US13154503

申请日：2011-06-07

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： C23C16/00 ,  C23C16/50 ,  C23C16/458

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US20070123005A1

公开(公告)日：2007-05-31

申请号：US11526097

申请日：2006-09-25

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： C23C16/00 ,  H01L21/20 ,  H05H1/24

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US08872021B2

公开(公告)日：2014-10-28

申请号：US12564991

申请日：2009-09-23

申请人： Sho Kato ,  Yoshikazu Hiura ,  Akihisa Shimomura ,  Takashi Ohtsuki ,  Satoshi Toriumi ,  Yasuyuki Arai

发明人： Sho Kato ,  Yoshikazu Hiura ,  Akihisa Shimomura ,  Takashi Ohtsuki ,  Satoshi Toriumi ,  Yasuyuki Arai

IPC分类号： H01L31/20 ,  H01L31/18 ,  H01L31/0256 ,  H01L31/0236 ,  H01L21/02 ,  H01L31/075 ,  H01L31/036

CPC分类号： H01L31/077 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the buffer layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

摘要翻译： 目的在于提高光电转换装置的转换效率，而不增加制造步骤。 光电转换装置包括使用在支撑基板上形成的具有一种导电类型的单晶半导体形成的第一半导体层，包括单晶区域和非晶区域的缓冲层，包括单晶区域的第二半导体层 和非晶区域，并且设置在所述缓冲层上，以及设置在所述第二半导体层上的具有与所述一种导电类型相反的导电类型的第三半导体层。 单晶区域的比例高于第二半导体层中的第一半导体层侧的非晶区域的比例，并且非晶区域的比例高于第三半导体层侧的单晶区域的比例。

公开(公告)号：US20100071767A1

公开(公告)日：2010-03-25

申请号：US12564991

申请日：2009-09-23

申请人： Sho KATO ,  Yoshikazu Hiura ,  Akihisa Shimomura ,  Takashi Ohtsuki ,  Satoshi Toriumi ,  Yasuyuki Arai

发明人： Sho KATO ,  Yoshikazu Hiura ,  Akihisa Shimomura ,  Takashi Ohtsuki ,  Satoshi Toriumi ,  Yasuyuki Arai

IPC分类号： H01L31/0248 ,  H01L31/18

CPC分类号： H01L31/077 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the buffer layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

摘要翻译： 目的在于提高光电转换装置的转换效率，而不增加制造步骤。 光电转换装置包括使用在支撑基板上形成的具有一种导电类型的单晶半导体形成的第一半导体层，包括单晶区域和非晶区域的缓冲层，包括单晶区域的第二半导体层 和非晶区域，并且设置在所述缓冲层上，以及设置在所述第二半导体层上的具有与所述一种导电类型相反的导电类型的第三半导体层。 单晶区域的比例高于第二半导体层中的第一半导体层侧的非晶区域的比例，并且非晶区域的比例高于第三半导体层侧的单晶区域的比例。

公开(公告)号：US5035753A

公开(公告)日：1991-07-30

申请号：US453310

申请日：1989-12-22

申请人： Kunio Suzuki ,  Masayoshi Abe ,  Mikio Kinka ,  Yasuyuki Arai ,  Akemi Satake ,  Kazuo Nishi ,  Shuichi Kugawa ,  Noriya Ishida

发明人： Kunio Suzuki ,  Masayoshi Abe ,  Mikio Kinka ,  Yasuyuki Arai ,  Akemi Satake ,  Kazuo Nishi ,  Shuichi Kugawa ,  Noriya Ishida

IPC分类号： H01L31/04 ,  H01L27/142 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/046 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell comprises a plurality of series connected photoelectric conversion structures formed on a substrate. The conversion structure consists of a first semiconductor film on a P-type, an intrinsic semiconductor film formed on the first semiconductor film such that one end thereof extends beyond an end of the first semiconductor film and a second semiconductor film of a second, opposite conductivity type formed on the intrinsic semiconductor film such that one end thereof extends beyond the extended end of the intrinsic semiconductor film and makes direct electrical contact with an end of the first semiconductor film of the adjacent structure.

摘要翻译： 太阳能电池包括形成在基板上的多个串联连接的光电转换结构。 转换结构由P型的第一半导体膜，形成在第一半导体膜上的本征半导体膜，使得其一端延伸超过第一半导体膜的端部，第二半导体膜的第二相反电导率 形成在本征半导体膜上，使得其一端延伸超过本征半导体膜的延伸端并与相邻结构的第一半导体膜的端部直接电接触。

公开(公告)号：US20070034870A1

公开(公告)日：2007-02-15

申请号：US11582471

申请日：2006-10-17

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L31/00

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

摘要翻译： 在包括第一绝缘层，结晶半导体层和第二绝缘层的层叠体的半导体器件中，通过从应力平衡的角度来确定其结构，改善了器件的特性。 在包括在基板上具有拉伸应力的结晶半导体层的有源层的半导体器件中，对形成为与基板侧的半导体层的表面紧密接触的第一绝缘层施加拉伸应力，压缩应力 被赋予形成为与衬底侧相反的一侧与半导体层的表面紧密接触的第二绝缘层。

公开(公告)号：US07015505B2

公开(公告)日：2006-03-21

申请号：US10684936

申请日：2003-10-14

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

公开(公告)号：US06380558B1

公开(公告)日：2002-04-30

申请号：US09472137

申请日：1999-12-23

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L2904

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

摘要翻译： 在包括第一绝缘层，结晶半导体层和第二绝缘层的层叠体的半导体器件中，通过从应力平衡的角度来确定其结构，改善了器件的特性。 在包括在基板上具有拉伸应力的结晶半导体层的有源层的半导体器件中，对形成为与基板侧的半导体层的表面紧密接触的第一绝缘层施加拉伸应力，压缩应力 被赋予形成为与衬底侧相反的一侧与半导体层的表面紧密接触的第二绝缘层。