利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.03 秒)

    Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers
    4.
    发明授权
    Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers 有权
    制造包括外延Hf 3 Si 2层的半导体结构的方法

    公开(公告)号：US06852588B1

    公开(公告)日：2005-02-08

    申请号：US10883181

    申请日：2004-06-30

    申请人： Zhiyi Yu ,  Jay A. Curless ,  Yong Liang

    发明人： Zhiyi Yu ,  Jay A. Curless ,  Yong Liang

    IPC分类号： H01L21/285 ,  H01L21/8242

    CPC分类号： H01L21/28518

    摘要： Methods are provided for fabricating semiconductor structures and semiconductor device structures utilizing epitaxial Hf3Si2 layers. A process in accordance with one embodiment of the invention begins by disposing a silicon substrate in a processing chamber. The pressure within the processing chamber and a temperature of the silicon substrate in the range of approximately 250° C. to approximately 700° C. is established. A layer of Hf3Si2 then is grown overlying the silicon substrate at a rate in the range of about one (1) to about five (5) monolayers per minute.

    摘要翻译： 提供了用于制造使用外延Hf 3 Si 2层的半导体结构和半导体器件结构的方法。 根据本发明的一个实施例的方法开始于将硅衬底设置在处理室中。 处理室内的压力和硅衬底的温度在大约250℃至大约700℃的范围内。 然后以约1（1）至约5（5）单层/分钟的速率在硅衬底上生长一层Hf 3 Si 2。

    Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
    5.
    发明授权
    Method and apparatus for controlling anti-phase domains in semiconductor structures and devices 失效
    用于控制半导体结构和器件中的反相畴的方法和装置

    公开(公告)号：US06589856B2

    公开(公告)日：2003-07-08

    申请号：US09921905

    申请日：2001-08-06

    申请人： Jay A. Curless

    发明人： Jay A. Curless

    IPC分类号： H01L2136

    CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/22 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691

    摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer has a lattice registry to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The layers of the semiconductor structure may be manufactured in such a way as to control the formation of anti-phase domains so that the structure may operate without the deleterious effects associated with such defects. Such manufacture may include heat treating the substrate to essentially or completely eliminate single steps (anti-phase domains) by forming double steps that can transfer to the oxide interface layer and suppress the formation of anti-phase domains by forming double step therein, in preference to single steps.

    摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层具有与下面的硅晶片和上覆的单晶材料层两者的晶格对准。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 半导体结构的层可以以控制反相畴的形成的方式制造，使得结构可以在没有与这种缺陷相关联的有害影响的情况下运行。 这样的制造可以包括通过形成可以转移到氧化物界面层并且通过在其中形成双重步骤来抑制反相结构域的形成的双重步骤来热处理基材以基本上或完全消除单个步骤（反相畴） 单步。