公开(公告)号：US09075079B2

公开(公告)日：2015-07-07

申请号：US14297337

申请日：2014-06-05

Applicant: mCube Inc.

Inventor： Shingo Yoneoka ,  Sudheer Sridharamurthy ,  Wenhua Zhang ,  Te-Hsi Terrence Lee

IPC: G01P15/13 ,  G01C19/5762 ,  G01C19/5719 ,  G01P15/125 ,  G01P15/08 ,  G01C19/5712

CPC classification number: G01P15/131 ,  G01C19/5712 ,  G01C19/5719 ,  G01C19/5762 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/084 ,  G01P2015/0865

Abstract: An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

Abstract translation: 集成的MEMS惯性传感器装置。 该器件包括覆盖CMOS衬底的MEMS惯性传感器。 MEMS惯性传感器包括经由至少一个驱动弹簧耦合到表面区域的驱动框架，经由至少一个感测弹簧耦合到驱动框架的感测质量块和设置在感测质量块下方的感测电极。 该装置还包括设置在感测电极附近的至少一对正交消除电极，其中每对包括N电极和P电极。

公开(公告)号：US10322926B1

公开(公告)日：2019-06-18

申请号：US14887737

申请日：2015-10-20

Applicant: mCube, Inc.

Inventor： Sudheer Sridharamurthy ,  Te-Hsi Terrence Lee ,  Wenhua Zhang

IPC: G01C19/56 ,  B81B3/00 ,  B81C1/00

Abstract: A structure for a MEMS device includes a MEMS layer comprising a mass portion and a spring portion, a substrate coupled to the MEMS layer, wherein the substrate comprises a planar region and an stopper region, wherein the MEMS device and the substrate are oriented in a plurality of relative orientations in response to an external force, wherein the spring portion and the stopper region are configured to disengagingly impact when the external force exceeds a first threshold force, wherein the mass portion and the planar region are configured to disengagingly impact when the external force exceeds a second threshold force, and wherein the second threshold force exceeds the first threshold force.

公开(公告)号：US20140311247A1

公开(公告)日：2014-10-23

申请号：US14163789

申请日：2014-01-24

Applicant: mCube Inc.

Inventor： WENHUA ZHANG ,  Sudheer Sridharamurthy ,  Shingo Yoneoka ,  Terrence Lee

IPC: B81B3/00

CPC classification number: G01C19/574

Abstract: A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

Abstract translation: MEMS速率传感器装置。 在一个实施例中，传感器装置包括配置在CMOS衬底上的MEMS速率传感器。 MEMS速率传感器可以包括具有四个驱动器元件的驱动器组和具有六个感测元件的传感器组，用于三轴旋转感测。 该传感器结构允许驱动质量中的低阻尼和感测质量中的高阻尼，这对于MEMS速率传感器设计是理想的。 低驱动器阻尼有利于MEMS速率功耗和性能，具有低驱动电位以实现高振荡幅度。

公开(公告)号：US10132630B2

公开(公告)日：2018-11-20

申请号：US14162718

申请日：2014-01-23

Applicant: mCube Inc.

Inventor： Terrence Lee ,  Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka

IPC: G01C19/5783 ,  G01C19/56 ,  G01P1/00 ,  B81B7/00 ,  G01P15/18 ,  G01P15/02 ,  G01P15/08

Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially configured with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

公开(公告)号：US10036635B2

公开(公告)日：2018-07-31

申请号：US14163789

申请日：2014-01-24

Applicant: mCube Inc.

Inventor： Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka ,  Terrence Lee

IPC: B81B3/00 ,  G01C19/574

CPC classification number: G01C19/574

Abstract: A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

公开(公告)号：US09377487B2

公开(公告)日：2016-06-28

申请号：US13922539

申请日：2013-06-20

Applicant: mCube Inc.

Inventor： Daniel N. Koury, Jr. ,  Sudheer Sridharamurthy

IPC: H01G7/00 ,  G01R3/00 ,  G01P15/125 ,  B81B3/00 ,  G01C19/5783 ,  G01P15/08

CPC classification number: G01R3/00 ,  B81B3/0072 ,  B81B2203/0163 ,  B81B2203/0307 ,  G01C19/5783 ,  G01P15/125 ,  G01P2015/0857 ,  Y10T29/49007

Abstract: An improved MEMS transducer apparatus and method is provided. The apparatus has a movable base structure including an outer surface region and at least one portion removed to form at least one inner surface region. At least one intermediate anchor structure is disposed within the inner surface region. The apparatus includes an intermediate spring structure operably coupled to the central anchor structure, and at least one portion of the inner surface region. A capacitor element is disposed within the inner surface region.

公开(公告)号：US20140361348A1

公开(公告)日：2014-12-11

申请号：US14297337

申请日：2014-06-05

Applicant: MCube Inc.

Inventor： SHINGO YONEOKA ,  Sudheer Sridharamurthy ,  Wenhua Zhang ,  Te-Hsi Terrence Yoneoka

IPC: G01P15/13 ,  G01P15/08

CPC classification number: G01P15/131 ,  G01C19/5712 ,  G01C19/5719 ,  G01C19/5762 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/084 ,  G01P2015/0865

Abstract: An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

Abstract translation: 集成的MEMS惯性传感器装置。 该器件包括覆盖CMOS衬底的MEMS惯性传感器。 MEMS惯性传感器包括经由至少一个驱动弹簧耦合到表面区域的驱动框架，经由至少一个感测弹簧耦合到驱动框架的感测质量块和设置在感测质量块下方的感测电极。 该装置还包括设置在感测电极附近的至少一对正交消除电极，其中每对包括N电极和P电极。