中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.012 seconds)

    MEMS device with reduced dynamic stress and methods
    3.
    发明授权
    MEMS device with reduced dynamic stress and methods 有权

    公开(公告)号：US10322926B1

    公开(公告)日：2019-06-18

    申请号：US14887737

    申请日：2015-10-20

    Applicant: mCube, Inc.

    Inventor： Sudheer Sridharamurthy ,  Te-Hsi Terrence Lee ,  Wenhua Zhang

    IPC: G01C19/56 ,  B81B3/00 ,  B81C1/00

    Abstract: A structure for a MEMS device includes a MEMS layer comprising a mass portion and a spring portion, a substrate coupled to the MEMS layer, wherein the substrate comprises a planar region and an stopper region, wherein the MEMS device and the substrate are oriented in a plurality of relative orientations in response to an external force, wherein the spring portion and the stopper region are configured to disengagingly impact when the external force exceeds a first threshold force, wherein the mass portion and the planar region are configured to disengagingly impact when the external force exceeds a second threshold force, and wherein the second threshold force exceeds the first threshold force.

    Method to test the quality factor of a MEMS gyroscope at chip probe
    4.
    发明授权
    Method to test the quality factor of a MEMS gyroscope at chip probe 有权

    公开(公告)号：US10267636B1

    公开(公告)日：2019-04-23

    申请号：US14987685

    申请日：2016-01-04

    Applicant: mCube, Inc.

    Inventor： Sudheer S. Sridharamurthy ,  Tony Maraldo ,  Zheng-Yao Sun ,  Wenhua Zhang ,  Te-Hsi Terrence Lee ,  Sanjay Bhandari ,  Joseph Rastegar

    IPC: G01C19/5684 ,  B81C99/00

    Abstract: A method for a MEMS device comprises determining in a computer system, a first driving signal for the MEMS device in response to a first time delay and to a base driving signal, applying the first driving signal to the MEMS device to induce the MEMS device to operate at a first frequency, determining a second driving signal for the MEMS device in response to a second time delay and to the base driving signal, applying the second driving signal to the MEMS device to induce the MEMS device to operate at a second frequency, determining a first quality factor associated with the MEMS device in response to the first frequency and the second frequency, determining a quality factor associated with the MEMS device in response to the first quality factor, and determining whether the quality factor associated with the MEMS device, exceeds a threshold quality factor.

    Method to package multiple mems sensors and actuators at different gases and cavity pressures
    5.
    发明授权
    Method to package multiple mems sensors and actuators at different gases and cavity pressures 有权

    公开(公告)号：US10183860B2

    公开(公告)日：2019-01-22

    申请号：US14887622

    申请日：2015-10-20

    Applicant: mCube Inc.

    Inventor： Wenhua Zhang ,  Shingo Yoneoka

    IPC: B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  H01L21/56 ,  H01L41/113

    Abstract: A method for fabricating a multiple MEMS device includes providing a semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel. The first MEMS is encapsulated within the first cavity and the second MEMS device is encapsulated within the second cavity. These devices is encapsulated within a first encapsulation environment at a first air pressure, and encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity is then subjected to a second encapsulating environment at a second air pressure via the channel of the second cavity.

    Multi-axis integrated MEMS inertial sensing device on single packaged chip
    6.
    发明授权
    Multi-axis integrated MEMS inertial sensing device on single packaged chip 有权

    公开(公告)号：US10132630B2

    公开(公告)日：2018-11-20

    申请号：US14162718

    申请日：2014-01-23

    Applicant: mCube Inc.

    Inventor： Terrence Lee ,  Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka

    IPC: G01C19/5783 ,  G01C19/56 ,  G01P1/00 ,  B81B7/00 ,  G01P15/18 ,  G01P15/02 ,  G01P15/08

    Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially configured with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

    Multi-axis MEMS rate sensor device
    7.
    发明授权
    Multi-axis MEMS rate sensor device 有权

    公开(公告)号：US10036635B2

    公开(公告)日：2018-07-31

    申请号：US14163789

    申请日：2014-01-24

    Applicant: mCube Inc.

    Inventor： Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka ,  Terrence Lee

    IPC: B81B3/00 ,  G01C19/574

    CPC classification number: G01C19/574

    Abstract: A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

    MEMS STRUCTURE WITH IMPROVED SHIELDING AND METHOD
    8.
    发明申请
    MEMS STRUCTURE WITH IMPROVED SHIELDING AND METHOD 审中-公开
    具有改进的屏蔽和方法的MEMS结构

    公开(公告)号：US20140370638A1

    公开(公告)日：2014-12-18

    申请号：US14302385

    申请日：2014-06-11

    Applicant: mCube Inc.

    Inventor： TE-HSI "TERRENCE" LEE ,  Sudheer S. Sridharamurthy ,  Shingo Yoneoka ,  Wenhua Zhang

    IPC: B81C1/00

    CPC classification number: B81B7/0022 ,  B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/11 ,  B81C1/00246 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00801 ,  B81C2201/053

    Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

    Abstract translation: 一种用于制造集成MEMS-CMOS器件的方法。 该方法可以包括提供具有表面区域的衬底构件，并形成具有覆盖在表面区域上的至少一个CMOS器件的CMOS IC层。 可以形成覆盖CMOS IC层的底部隔离层，并且可以形成覆盖在底部隔离层的一部分上的屏蔽层和顶部隔离层。 底部隔离层可以包括顶部隔离层和屏蔽层之间的隔离区域。 覆盖顶部隔离层，屏蔽层和底部隔离层的MEMS层，并且可被蚀刻以形成具有至少一个可移动结构和至少一个锚定结构的至少一个MEMS结构。

    MEMS structure with improved shielding and method
    9.
    发明授权
    MEMS structure with improved shielding and method 有权

    公开(公告)号：US10046964B2

    公开(公告)日：2018-08-14

    申请号：US14302385

    申请日：2014-06-11

    Applicant: mCube Inc.

    Inventor： Te-Hsi “Terrence” Lee ,  Sudheer S. Sridharamurthy ,  Shingo Yoneoka ,  Wenhua Zhang

    IPC: B81B7/00 ,  B81C1/00 ,  B81B3/00

    Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

Patent Agency Ranking