公开(公告)号：US10267636B1

公开(公告)日：2019-04-23

申请号：US14987685

申请日：2016-01-04

Applicant: mCube, Inc.

Inventor： Sudheer S. Sridharamurthy ,  Tony Maraldo ,  Zheng-Yao Sun ,  Wenhua Zhang ,  Te-Hsi Terrence Lee ,  Sanjay Bhandari ,  Joseph Rastegar

IPC: G01C19/5684 ,  B81C99/00

Abstract: A method for a MEMS device comprises determining in a computer system, a first driving signal for the MEMS device in response to a first time delay and to a base driving signal, applying the first driving signal to the MEMS device to induce the MEMS device to operate at a first frequency, determining a second driving signal for the MEMS device in response to a second time delay and to the base driving signal, applying the second driving signal to the MEMS device to induce the MEMS device to operate at a second frequency, determining a first quality factor associated with the MEMS device in response to the first frequency and the second frequency, determining a quality factor associated with the MEMS device in response to the first quality factor, and determining whether the quality factor associated with the MEMS device, exceeds a threshold quality factor.

公开(公告)号：US10322926B1

公开(公告)日：2019-06-18

申请号：US14887737

申请日：2015-10-20

Applicant: mCube, Inc.

Inventor： Sudheer Sridharamurthy ,  Te-Hsi Terrence Lee ,  Wenhua Zhang

IPC: G01C19/56 ,  B81B3/00 ,  B81C1/00

Abstract: A structure for a MEMS device includes a MEMS layer comprising a mass portion and a spring portion, a substrate coupled to the MEMS layer, wherein the substrate comprises a planar region and an stopper region, wherein the MEMS device and the substrate are oriented in a plurality of relative orientations in response to an external force, wherein the spring portion and the stopper region are configured to disengagingly impact when the external force exceeds a first threshold force, wherein the mass portion and the planar region are configured to disengagingly impact when the external force exceeds a second threshold force, and wherein the second threshold force exceeds the first threshold force.

公开(公告)号：US09379733B1

公开(公告)日：2016-06-28

申请号：US14794722

申请日：2015-07-08

Applicant: mCube, Inc.

Inventor： Te-Hsi Terrence Lee

IPC: H03M3/00 ,  H03H9/24 ,  G01C19/5776

CPC classification number: H03M3/30 ,  G01C19/5776 ,  G01P15/097 ,  H03H9/2426

Abstract: A Synchronous Modulation Resonator (SMR) device, the device includes a resonator having coupled to a Vd source and a Vr source, wherein the Vd is DC biased, wherein the Vr is AC, wherein the resonator provides a resonator output in response to Vd and Vr, a Sigma Delta Modulator (SDM) coupled to the resonator and to the Vr source, wherein the SDM provides a signal output in response to the resonator output and to the Vr, and a digital output block coupled to the SDM, wherein the digital output block is configured to provide a digital signal representation of the resonator output, in response to the signal output.

Abstract translation: 一种同步调制谐振器（SMR）器件，该器件包括耦合到Vd源和Vr源的谐振器，其中Vd是DC偏置的，其中Vr是AC，其中谐振器提供响应于Vd的谐振器输出和 Vr，耦合到谐振器和Vr源的Sigma Delta调制器（SDM），其中SDM响应于谐振器输出和Vr而提供信号输出，以及耦合到SDM的数字输出块，其中数字 输出块被配置为响应于信号输出提供谐振器输出的数字信号表示。

公开(公告)号：US09075079B2

公开(公告)日：2015-07-07

申请号：US14297337

申请日：2014-06-05

Applicant: mCube Inc.

Inventor： Shingo Yoneoka ,  Sudheer Sridharamurthy ,  Wenhua Zhang ,  Te-Hsi Terrence Lee

IPC: G01P15/13 ,  G01C19/5762 ,  G01C19/5719 ,  G01P15/125 ,  G01P15/08 ,  G01C19/5712

CPC classification number: G01P15/131 ,  G01C19/5712 ,  G01C19/5719 ,  G01C19/5762 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/084 ,  G01P2015/0865

Abstract: An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

Abstract translation: 集成的MEMS惯性传感器装置。 该器件包括覆盖CMOS衬底的MEMS惯性传感器。 MEMS惯性传感器包括经由至少一个驱动弹簧耦合到表面区域的驱动框架，经由至少一个感测弹簧耦合到驱动框架的感测质量块和设置在感测质量块下方的感测电极。 该装置还包括设置在感测电极附近的至少一对正交消除电极，其中每对包括N电极和P电极。