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公开(公告)号：US10017380B1
公开(公告)日：2018-07-10
申请号：US15676457
申请日：2017-08-14
Applicant: Robert Bosch GmbH
Inventor： Jan-Peter Stadler , Jochen Reinmuth
CPC classification number: B81C1/00047 , B81B1/004 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2203/0315 , B81B2207/012 , B81C1/00293 , B81C2201/0116 , B81C2201/0132 , B81C2201/0143 , B81C2201/0198 , B81C2203/0145
Abstract: A micromechanical device that includes a first substrate, at least one first cavity, and a sealed inlet to the first cavity, the inlet extending through the first substrate. The inlet includes a laser-drilled first subsection and a plasma-etched second subsection, the plasma-etched second subsection having an opening to the first cavity, and the inlet in the first subsection being sealed by a molten seal made of molten mass of at least the first substrate. A combined laser drilling and plasma etching method for manufacturing micromechanical devices is also described.
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公开(公告)号：US20180065845A1
公开(公告)日：2018-03-08
申请号：US15694589
申请日：2017-09-01
Applicant: Robert Bosch GmbH
Inventor： Benjamin Steuer , Stefan Pinter
CPC classification number: B81C1/00626 , B81B7/0058 , B81B2201/042 , B81B2203/0384 , B81C1/00317 , B81C2201/0116 , G02B26/0833 , G02B27/0006
Abstract: A manufacturing method for a micromechanical device including an inclined optical window and a corresponding micromechanical device. The method includes: providing a first substrate having front and back sides and a recess; applying a second substrate on the front side, the second substrate being thermally deformable and having a first through hole above the recess which has a smaller lateral extension than the recess; forming a flap area on the second substrate above/below the first through hole which is situated in a first position with respect to the first substrate; thermally deforming the second substrate, the flap area being moved into a second position within the recess which is inclined with respect to the first position and optionally subsided into the recess; removing the flap area from the second substrate; and attaching the optical window on the second substrate above/below the first through hole in the second inclined position.
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公开(公告)号：US20170253477A1
公开(公告)日：2017-09-07
申请号：US15602760
申请日：2017-05-23
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Lorenzo BALDO , Enri DUQI , Flavio Francesco VILLA
CPC classification number: B81B7/0045 , B81B3/0072 , B81B2201/0228 , B81B2201/025 , B81B2203/0127 , B81B2203/0163 , B81B2203/0315 , B81B2207/012 , B81C1/00182 , B81C1/00325 , B81C2201/0116 , B81C2201/0173 , B81C2203/0785 , G02B26/0858
Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.
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4.发明授权Semiconductor manufacturing and semiconductor device with semiconductor structure 有权具有半导体结构的半导体制造和半导体器件公开(公告)号：US08481400B2
公开(公告)日：2013-07-09
申请号：US12885336
申请日：2010-09-17
Applicant: Thoralf Kautzsch , Boris Binder , Frank Hoffmann , Uwe Rudolph
Inventor： Thoralf Kautzsch , Boris Binder , Frank Hoffmann , Uwe Rudolph
IPC: H01L21/76
CPC classification number: B81C1/00626 , B81B3/0021 , B81B2203/0109 , B81B2203/0315 , B81C1/00182 , B81C2201/0116
Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.
Abstract translation: 描述和描述了与半导体制造有关的实施例和具有半导体结构的半导体器件
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5.发明授权Manufacturing method of a gas sensor integrated on a semiconductor substrate 有权集成在半导体衬底上的气体传感器的制造方法公开(公告)号：US08101448B2
公开(公告)日：2012-01-24
申请号：US12413346
申请日：2009-03-27
Applicant: Crocifisso Marco Antonio Renna , Alessandro Auditore , Alessio Romano , Sebastiano Ravesi
IPC: H01L21/00
CPC classification number: G01N27/128 , B81B2201/0214 , B81C1/00158 , B81C2201/0116 , H01L21/3247
Abstract: A method manufactures a gas sensor integrated on a semiconductor substrate. The method includes: realizing a first plurality of openings in the semiconductor substrate; realizing a crystalline silicon membrane suspended on the semiconductor substrate, forming an insulating cavity buried in the substrate; realizing a second plurality of openings in the semiconductor substrate, so as to totally suspend on the semiconductor substrate the crystalline silicon membrane; realizing, through a thermal oxidation process of the totally suspended crystalline silicon membrane, a suspended dielectric membrane; realizing, through selective photolithography, a heating element; realizing, through selective photolithography, electrodes and a pair of electric contacts; and selectively realizing, above the electrodes, a sensitive element by compacting layers of metallic oxide through a sintering process generated in the gas sensor by connecting the electrodes to a voltage generator.
Abstract translation: 一种制造集成在半导体衬底上的气体传感器的方法。 该方法包括：实现半导体衬底中的第一多个开口; 实现悬浮在半导体衬底上的结晶硅膜，形成埋在衬底中的绝缘腔; 在半导体衬底中实现第二多个开口，以便在半导体衬底上完全悬挂晶体硅膜; 通过完全悬浮的结晶硅膜的热氧化工艺实现悬浮介电膜; 通过选择性光刻实现加热元件; 通过选择性光刻实现电极和一对电触点; 并且通过在气体传感器中产生的烧结过程，通过将电极连接到电压发生器来压实金属氧化物层，从而在电极之上选择性地实现敏感元件。
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Patent Agency Ranking
公开(公告)号：US06495389B2
公开(公告)日：2002-12-17
申请号：US09924559
申请日：2001-08-09
Applicant: Seiichiro Ishio , Inao Toyoda , Yasutoshi Suzuki
Inventor： Seiichiro Ishio , Inao Toyoda , Yasutoshi Suzuki
IPC: H01L2100
CPC classification number: B81C1/00833 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00047 , B81C2201/0116 , B81C2201/019
Abstract: In a method for manufacturing a semiconductor pressure sensor, after a reference pressure chamber is formed inside a semiconductor substrate and a diaphragm is formed from a part of the semiconductor substrate, a heat treatment is performed to form an insulation film, an element, or the like on the semiconductor substrate. At that time, a heat treatment temperature is controlled to be lower than (−430P0+1430)° C. where P0 is an internal pressure (atm) of the reference pressure chamber at a room temperature. Accordingly, crystal defects can be prevented from being produced in the diaphragm.
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公开(公告)号：US20180346322A1
公开(公告)日：2018-12-06
申请号：US15989259
申请日：2018-05-25
Applicant: ROHM CO., LTD.
Inventor： Masahiro SAKURAGI
CPC classification number: B81C1/00047 , B81B3/0021 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81B2207/012 , B81C2201/0116 , B81C2201/053 , G01L19/0069 , G01L19/143
Abstract: A method for manufacturing a MEMS device includes a hole forming step of forming a plurality of holes concaved from a principal surface in a substrate material including a semiconductor, a connecting-hollow-portion forming step of forming a connecting hollow portion that connects the plurality of holes together, and a movable-portion forming step of, by partially moving the semiconductor of the substrate material so as to close at least one part of the plurality of holes, forming a hollow portion that exists inside the substrate material and a movable portion that coincides with the hollow portion when viewed in a thickness direction of the substrate material.
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公开(公告)号：US09711393B2
公开(公告)日：2017-07-18
申请号：US14819520
申请日：2015-08-06
Applicant: Infineon Technologies Dresden GMBH
Inventor： Thoralf Kautzsch , Alessia Scire , Steffen Bieselt
IPC: H01L29/06 , H01L21/764 , H01L21/762 , H01L27/12 , H01L21/324 , H01L29/78 , B81C1/00
CPC classification number: H01L21/764 , B81B2203/0315 , B81C1/00047 , B81C2201/0116 , H01L21/3247 , H01L21/7624 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/7833
Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.
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9.发明申请公开(公告)号：US20170144881A1
公开(公告)日：2017-05-25
申请号：US15191160
申请日：2016-06-23
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Lorenzo Baldo , Enri Duqi , Flavio Francesco Villa
CPC classification number: B81B7/0045 , B81B3/0072 , B81B2201/0228 , B81B2201/025 , B81B2203/0127 , B81B2203/0163 , B81B2203/0315 , B81B2207/012 , B81C1/00182 , B81C1/00325 , B81C2201/0116 , B81C2201/0173 , B81C2203/0785 , G02B26/0858
Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.
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公开(公告)号：US20150340268A1
公开(公告)日：2015-11-26
申请号：US14819520
申请日：2015-08-06
Applicant: Infineon Technologies Dresden GMBH
Inventor： Thoralf Kautzsch , Alessia Scire , Steffen Bieselt
IPC: H01L21/764 , H01L29/06 , H01L27/12 , H01L21/762
CPC classification number: H01L21/764 , B81B2203/0315 , B81C1/00047 , B81C2201/0116 , H01L21/3247 , H01L21/7624 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/7833
Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.
Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在衬底内形成第一空腔。 第一空腔设置在基板的一部分下方。 该方法还包括在第一腔内形成第一支柱以支撑衬底的该部分。
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