公开(公告)号：US20240355693A1

公开(公告)日：2024-10-24

申请号：US18630859

申请日：2024-04-09

申请人： Kabushiki Kaisha Toshiba

发明人： Shogo MINAMI ,  Tomohiro IGUCHI ,  Katsuya SATO ,  Keiichiro MATSUO

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L23/26 ,  H01L23/29

CPC分类号： H01L23/3135 ,  H01L23/26 ,  H01L23/296 ,  H01L24/48 ,  H01L2224/48175 ,  H01L2224/48458 ,  H01L2924/1811 ,  H01L2924/186 ,  H01L2924/3511

摘要： According to one embodiment, a semiconductor device includes a semiconductor element on a substrate. A first surface of the semiconductor element faces away from the substrate and a second surface faces the substrate. A first surface electrode is on the first surface of the semiconductor element. A bonding wire is connected to the first surface electrode at a bonding portion. A first sealing member covers the bonding portion. A second sealing member covers a portion of the first surface electrode outside the bonding portion. A third sealing member covers the first sealing member and the second sealing member.

公开(公告)号：US11948847B2

公开(公告)日：2024-04-02

申请号：US17829185

申请日：2022-05-31

申请人： ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

发明人： Rajesh Katkar ,  Liang Wang

IPC分类号： H01L23/26 ,  B81B7/00 ,  B81C3/00 ,  H01L21/322 ,  H01L23/00 ,  H01L23/04 ,  H01L23/10

CPC分类号： H01L23/26 ,  B81B7/0038 ,  B81C3/001 ,  H01L21/3221 ,  H01L23/04 ,  H01L23/10 ,  H01L24/03 ,  H01L24/09

摘要： A bonded structure is disclosed. The bonded structure can include a first element that has a first bonding surface. The bonded structure can further include a second element that has a second bonding surface. The first and second bonding surfaces are bonded to one another along a bonding interface. The bonded structure can also include an integrated device that is coupled to or formed with the first element or the second element. The bonded structure can further include a channel that is disposed along the bonding interface around the integrated device to define an effectively closed profile The bonded structure can also include a getter material that is disposed in the channel. The getter material is configured to reduce the diffusion of gas into an interior region of the bonded structure.

公开(公告)号：US11524271B2

公开(公告)日：2022-12-13

申请号：US16642935

申请日：2017-08-28

申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS

发明人： Yongho Choa ,  Hyoryoung Lim ,  Nusia Eom

IPC分类号： C23C14/16 ,  C23C14/34 ,  C23C14/58 ,  B01J20/02 ,  B01J20/32 ,  B01D53/02 ,  C01B3/00 ,  B81B7/00 ,  H01L23/26

摘要： A thin film getter is provided. The thin film getter comprises a substrate and an absorption layer on the substrate, wherein the absorption layer comprises a getter material for absorbing target gas and an auxiliary material for providing a moving path of the target gas, and the getter material can be divided into a plurality of getter regions by the auxiliary material.

公开(公告)号：US11380597B2

公开(公告)日：2022-07-05

申请号：US16011525

申请日：2018-06-18

申请人： Invensas Bonding Technologies, Inc.

发明人： Rajesh Katkar ,  Liang Wang

IPC分类号： H01L23/26 ,  H01L21/322 ,  H01L23/10 ,  B81C3/00 ,  H01L23/00 ,  B81B7/00 ,  H01L23/04

摘要： A bonded structure is disclosed. The bonded structure can include a first element that has a first bonding surface. The bonded structure can further include a second element that has a second bonding surface. The first and second bonding surfaces are bonded to one another along a bonding interface. The bonded structure can also include an integrated device that is coupled to or formed with the first element or the second element. The bonded structure can further include a channel that is disposed along the bonding interface around the integrated device to define an effectively closed profile The bonded structure can also include a getter material that is disposed in the channel. The getter material is configured to reduce the diffusion of gas into an interior region of the bonded structure.

公开(公告)号：US11331647B2

公开(公告)日：2022-05-17

申请号：US17440826

申请日：2021-02-09

申请人： SAES GETTERS S.P.A.

发明人： Miriam Riva ,  Paolo Vacca

IPC分类号： B01J20/06 ,  B01J20/26 ,  B01J20/28 ,  B01D53/02 ,  B01D53/26 ,  B01D53/28 ,  B01J20/18 ,  H01L23/26

摘要： High-capacity dispensable moisture and hydrogen getter to be used as sealant and/or to control the level of these substances in electronic or optoelectronic sensitive devices, its use for the hermetic sealing or semi-hermetic sealing of such electronic or optoelectronic sensitive devices and a method to control the level of contaminants within them.

公开(公告)号：US11285453B2

公开(公告)日：2022-03-29

申请号：US17073063

申请日：2020-10-16

申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS

发明人： Yongho Choa ,  Nusia Eom ,  Hyoryoung Lim

IPC分类号： H01L23/26 ,  B01J20/10 ,  B01J21/08 ,  B01J35/00 ,  H01J7/18 ,  B01J37/34 ,  B01J20/02 ,  B01J20/30 ,  B01J35/02 ,  B01J20/06 ,  B01J20/32 ,  B01J23/42 ,  B01J23/44 ,  B01J37/00 ,  B01J37/02 ,  G01J5/04 ,  B01J23/50 ,  G01J1/02

摘要： A moisture and hydrogen adsorption getter is provided. The moisture and hydrogen adsorption getter includes a silicon substrate including a concave portion and a convex portion, a silicon oxide layer conformally provided along a surface of the concave portion and a surface of the convex portion and configured to adsorb moisture, and a hydrogen adsorption pattern disposed on the silicon oxide layer. A portion of the silicon oxide layer is exposed between portions of the hydrogen adsorption pattern.

公开(公告)号：US20210028077A1

公开(公告)日：2021-01-28

申请号：US17043561

申请日：2018-04-03

申请人： CORNING INCORPORATED

发明人： Robert Alan Bellman ,  Jin Su Kim

IPC分类号： H01L23/04 ,  C03C15/00 ,  B32B17/06 ,  B32B3/30 ,  H01L27/146 ,  H01L31/0203 ,  H01L31/18 ,  H01L33/48 ,  B81B7/00 ,  B81C1/00 ,  H01L23/26 ,  H01L21/52

摘要： Wafer level encapsulated packages includes a wafer, a glass substrate hermetically sealed to the wafer, and an electronic component. The glass substrate includes a glass cladding layer fused to a glass core layer and a cavity formed in the glass substrate. The electronic component is encapsulated within the cavity. In various embodiments, the floor of the cavity is planar and substantially parallel to a plane defined by a top surface of the glass cladding layer. The glass cladding layer has a higher etch rate in an etchant than the glass core layer. In various embodiments, the wafer level encapsulated package is substantially optically transparent. Methods for forming the wafer level encapsulated package and electronic devices formed from the wafer level encapsulated package are also described.

公开(公告)号：US20200273815A1

公开(公告)日：2020-08-27

申请号：US16553365

申请日：2019-08-28

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Chengyuan Luo

IPC分类号： H01L23/00 ,  H01L27/12 ,  H01L23/34 ,  H01L23/427 ,  H01L23/26

摘要： The disclosure relates to an array substrate and a method for fabricating an array substrate. The array substrate includes a base substrate, a cover layer on the base substrate, an opening at least partially passing through the cover layer, a stress buffer structure adjacent to the opening and on a side of the cover layer facing the base substrate, wherein the stress buffer structure includes a phase change material, wherein a height of a portion of the cover layer on the phase change material is lower than a height of a portion of the cover layer adjacent to the phase change material.

公开(公告)号：US10752755B2

公开(公告)日：2020-08-25

申请号：US16081430

申请日：2017-02-28

申请人： JNC CORPORATION ,  OSAKA RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Takeshi Fujiwara ,  Takayuki Hattori ,  Jyunichi Inagaki ,  Takafumi Kuninobu ,  Kazuhiro Takizawa ,  Yasuyuki Agari ,  Hiroshi Hirano ,  Joji Kadota ,  Akinori Okada

IPC分类号： C08K9/06 ,  C08L63/00 ,  C08L83/04 ,  C08G59/32 ,  C09K5/14 ,  C08L83/06 ,  C08K9/04 ,  H01L23/26 ,  C09C3/12 ,  C08K3/04 ,  C08G77/04 ,  C08K3/14 ,  C08K3/22 ,  C08K3/28 ,  C08K3/34 ,  C08K3/38 ,  H01L23/373

摘要： This invention is a composition capable of forming a heat-dissipating member that has high heat resistance and high thermal conductivity. This composition for a heat-dissipating member comprises a thermally conductive first inorganic filler bonded to one end of a first coupling agent, and a thermally conductive second inorganic filler bonded to one end of a second coupling agent, the composition being characterized in that: the other end of the first coupling agent and the other end of the second coupling agent are each bonded to a bifunctional or higher silsesquioxane by a curing treatment, as illustrated in FIG. 2; or at least one of the first coupling agent and the second coupling agent includes, in the structure thereof, a silsesquioxane, and the other end of the first coupling agent and the other end of the second coupling agent are bonded together as illustrated in FIG. 3.

公开(公告)号：US20190341321A1

公开(公告)日：2019-11-07

申请号：US16512146

申请日：2019-07-15

申请人： Micron Technology, Inc.

发明人： Michael Tan ,  Cheng P. Pour

IPC分类号： H01L23/26 ,  H01L21/322 ,  H01L23/31 ,  H01L21/56

摘要： Disclosed embodiments include external gettering provided by electronic packaging. An external gettering element for a semiconductor substrate, which may be incorporated as part of an electronic packaging for the structure, is disclosed. Semiconductor structures and stacked semiconductor structures including an external gettering element are also disclosed. An encapsulation mold compound providing external gettering is also disclosed. Methods of fabricating such devices are also disclosed.