公开(公告)号：US5892254A

公开(公告)日：1999-04-06

申请号：US940258

申请日：1997-09-30

申请人： Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

发明人： Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92 ,  H01L29/76 ,  H01L23/48 ,  H01L23/52 ,  H01L29/94

CPC分类号： H01L21/7687 ,  H01L21/76841 ,  H01L21/76849 ,  H01L21/76855 ,  H01L28/60 ,  H01L28/75 ,  H01L21/28568 ,  H01L28/55

摘要： A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.

摘要翻译： 在集成电路电容器中包括阻挡层，在导电插塞和下电容器电极之间。 阻挡层包括难熔金属和晶界填充材料。 晶界填充材料优选为Ce，Zr，Y，Th，Hf，La，Al和/或其氧化物，优选小于阻挡层的20原子％。 阻挡层可以减少并优选地防止氧的扩散，从而可以减小集成电路电容器的漏电流和氧化。

公开(公告)号：US5784170A

公开(公告)日：1998-07-21

申请号：US646121

申请日：1996-05-07

申请人： Chang Soo Park ,  Dong Ho Lee

发明人： Chang Soo Park ,  Dong Ho Lee

IPC分类号： H04J14/00 ,  H04B10/50 ,  H04B10/572 ,  H04J14/02

CPC分类号： H04J14/0224 ,  H04B10/505 ,  H04B10/506 ,  H04B10/572

摘要： The present invention relates to an apparatus for generating quasi equally spaced multi-channel frequencies using a frequency shifter. The optical multi-channel transmission system using OFDM or WDM can be provided with quasi equally spaced(unequally sequential spaced) frequencies on the basis of the functional relation among the frequency differences(n.sub.ij =n.sub.i -n.sub.j (i=j=1,2,3, . . . n)) of any two neighboring channels. Namely, after generating equally spaced frequencies by using a reference resonator, such as a Fiber Fabry Perot(FFP) resonator, each of the equally spaced frequencies is sequentially shifted by a frequency shifter, which generates and controls the quasi equally spaced(unequally sequential spaced) frequencies in order to effectively avoid crosstalk due to FFWM, and fully make use of the transmission bandwidth belonging to the low dispersion region of the optical fiber. the effect of the present invention will be apparent as follows: by easily generating and controlling quasi equally spaced frequencies having a functional relation between two adjacent channels, crosstalk due to Fiber Four Wave Mixing(FFWM) is effectively avoided, and the transmission bandwidth in the region of the low dispersion is fully utilized. Furthermore, the compatibility is easily accomplished.

摘要翻译： 本发明涉及一种使用移频器产生准等距多声道频率的装置。 基于频差之间的功能关系，可以使用OFDM或WDM的光多通道传输系统提供准等间隔（不等间隔的）频率（nij = ni-nj（i = j = 1,2， 3，...，n））。 也就是说，在通过使用参考谐振器（例如光纤法布里珀罗（FFP））谐振器产生等间隔的频率之后，每个等间隔的频率被移频器顺序移位，该移频器产生并控制准等距间隔（不等间隔的 ）频率，以便有效地避免由于FFWM引起的串扰，并充分利用属于光纤低色散区域的传输带宽。 本发明的效果将显而易见：通过容易地产生和控制具有两个相邻通道之间的功能关系的准等间隔的频率，有效地避免了由于光纤四波混频（FFWM）引起的串扰，并且传输带宽 低分散的区域被充分利用。 此外，容易实现兼容性。

公开(公告)号：US5589713A

公开(公告)日：1996-12-31

申请号：US456732

申请日：1995-06-01

申请人： Sang-in Lee ,  Chang-soo Park

发明人： Sang-in Lee ,  Chang-soo Park

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/54

CPC分类号： H01L21/76865 ,  H01L21/3105 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76858 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002

摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via), a reactive spacer formed on the sidewall of the opening or a reactive layer formed on the sidewall and on the bottom surface of the opening and a first conductive layer formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer is formed on the sidewall of the opening, when the first conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer improves the reflow of the first conductive layer during a heat-treating step for filling the opening at a high temperature below a melting temperature. Thus, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 .mu.m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.

摘要翻译： 公开了具有新型接触结构的半导体器件的布线层。 半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层，形成在开口的侧壁上的反应性间隔物或形成在开口的侧壁和底表面上的反应层，第一 形成在绝缘层上的完全填充开口的导电层。 由于反应性间隔物或层形成在开口的侧壁上，所以当沉积第一导电层材料时，将形成大的岛形成溅射的Al膜的大颗粒。 此外，提供反应间隔物或层在用于在低于熔融温度的高温下填充开口的热处理步骤期间改善了第一导电层的回流。 因此，可以确保用溅射的Al完全填充开口。 尺寸小于1μm并且具有大于1.0的纵横比的所有接触孔可以完全填充Al，从而提高半导体器件的布线的可靠性。

公开(公告)号：US5534463A

公开(公告)日：1996-07-09

申请号：US8775

申请日：1993-01-25

申请人： Sang-in Lee ,  Chang-soo Park

发明人： Sang-in Lee ,  Chang-soo Park

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L21/76865 ,  H01L21/3105 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76858 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002

摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via), a reactive spacer formed on the sidewall of the opening or a reactive layer formed on the sidewall and on the bottom surface of the opening and a first conductive layer formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer is formed on the sidewall of the opening, when the first conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer improves the reflow of the first conductive layer during a heat-treating step for filling the opening at a high temperature below a melting temperature. Thus, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 .mu.m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.

摘要翻译： 公开了具有新型接触结构的半导体器件的布线层。 半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层，形成在开口的侧壁上的反应性间隔物或形成在开口的侧壁和底表面上的反应层，第一 形成在绝缘层上的完全填充开口的导电层。 由于反应性间隔物或层形成在开口的侧壁上，所以当沉积第一导电层材料时，将形成大的岛形成溅射的Al膜的大颗粒。 此外，提供反应间隔物或层在用于在低于熔融温度的高温下填充开口的热处理步骤期间改善了第一导电层的回流。 因此，可以确保用溅射的Al完全填充开口。 尺寸小于1μm并且具有大于1.0的纵横比的所有接触孔可以完全填充Al，从而提高半导体器件的布线的可靠性。

公开(公告)号：US5318923A

公开(公告)日：1994-06-07

申请号：US897294

申请日：1992-06-11

申请人： Chang-soo Park

发明人： Chang-soo Park

IPC分类号： H01L21/3205 ,  C23C14/04 ,  C23C14/16 ,  C23C14/58 ,  H01L21/321 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

CPC分类号： C23C14/165 ,  C23C14/046 ,  C23C14/58 ,  C23C14/5806 ,  C23C14/584 ,  H01L21/32115 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002

摘要： A method for forming a metal layer in a semiconductor device is disclosed. The method includes a first process for depositing a metal at an optional temperature after forming the pattern of a contact hole on the semiconductor substrate on which the stepped portion is formed, and a second process for annealing the deposited metal in a sputtering reaction chamber to fill up the contact hole with said metal. According to the invention, it is possible to completely fill up a contact hole having a high aspect ratio.

摘要翻译： 公开了一种在半导体器件中形成金属层的方法。 该方法包括在形成阶梯部分的半导体衬底上形成接触孔的图案之后在任选温度下沉积金属的第一工艺和用于在溅射反应室中退火沉积的金属的第二工艺以填充 与所述金属接触所述接触孔。 根据本发明，可以完全填充高纵横比的接触孔。