公开(公告)号：US06243939B1

公开(公告)日：2001-06-12

申请号：US09412630

申请日：1999-10-04

Applicant: Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng-Teh Wu ,  Jei-Wei Chang

Inventor： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng-Teh Wu ,  Jei-Wei Chang

IPC: G11B542

CPC classification number: G11B5/3967 ,  G11B5/3163 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A method of manufacturing a magnetic transducer structure using a special pole etch using an IBE preferably with Kr or Xe, and a write gap material with a high IBE etch rate such as Ta, NiCu alloys, Pd, Pd—Cu alloys. A first layer of pole material and a write gap insulating layer are formed over the substrate. The write gap layer is composed of a material having a high ion beam etch rate compared to the first and second layers of pole material. The write gap insulating layer is preferably composed of Ni—Cu alloy, Pd, Pd—Cu alloys. Next, a second layer of pole material is formed on the first insulating layer. In a key step, we ion beam etch (IBE) the second pole; the write gap insulating layer and the first layer; the second pole serving as an etch mask during the ion beam etching to form a head. In a second preferred embodiment of the invention, the ion beam etching performed using a gas of Kr or Xe. The invention teaches a high IBE etch selectivity from the write gap dielectric to the upper pole (NeFe) for partial pole trim (PPT) applications by three embodiments: (a) selecting high IBE rate gap dielectric materials (e.g., NiCu alloys, Pd, and Pd—Cu alloys, (b) using an IBE gas Kr or Xr or both, instead of Ar, and (c) both (a) and (b).

Abstract translation: 使用优选用Kr或Xe的IBE制造使用特殊极蚀刻的磁换能器结构的方法以及具有高IBE蚀刻速率的写间隙材料，例如Ta，NiCu合金，Pd，Pd-Cu合金。 第一层极材料层和写间隙绝缘层形成在衬底上。 写间隙层由与第一和第二极材料层相比具有高离子束蚀刻速率的材料组成。 写间隙绝缘层优选由Ni-Cu合金，Pd，Pd-Cu合金构成。 接下来，在第一绝缘层上形成第二极极材料层。 在关键的一步中，我们离子束蚀刻（IBE）是第二极; 写间隙绝缘层和第一层; 第二极在离子束蚀刻期间用作蚀刻掩模以形成头部。 在本发明的第二优选实施例中，使用Kr或Xe的气体进行离子束蚀刻。 本发明通过三个实施例教导了从写间隙电介质到上极（NeFe）的高IBE蚀刻选择性：（a）选择高IBE速率间隙电介质材料（例如，NiCu合金，Pd， 和Pd-Cu合金，（b）使用IBE气体Kr或Xr或两者代替Ar，和（c）（a）和（b）两者。

公开(公告)号：US5920980A

公开(公告)日：1999-07-13

申请号：US810060

申请日：1997-03-05

Applicant: Cherng-Chyi Han ,  Mao-Min Chen ,  Chien-Li Lin ,  Kochan Ju ,  Cheng Tzong Horng

Inventor： Cherng-Chyi Han ,  Mao-Min Chen ,  Chien-Li Lin ,  Kochan Ju ,  Cheng Tzong Horng

IPC: G01R33/09 ,  G11B5/39 ,  G11B5/42

CPC classification number: B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/399 ,  G11B5/3932 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is then formed over the substrate a soft adjacent layer (SAL). There is then formed upon the soft adjacent layer (SAL) a dielectric layer. There is then formed at least in part contacting the dielectric layer a magnetoresistive (MR) layer, where the soft adjacent layer (SAL) and the dielectric layer are planar. The method contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method.

Abstract translation: 软相邻层（SAL）磁阻（MR）传感器元件和用于制造软相邻层（SAL）磁阻（MR）传感器元件的方法。 为了实践该方法，首先提供了一种衬底。 然后在衬底上形成软相邻层（SAL）。 然后在软相邻层（SAL）上形成介电层。 然后形成至少部分地使电介质层与磁阻（MR）层接触，其中软相邻层（SAL）和电介质层是平面的。 该方法考虑了通过该方法形成的软相邻层（SAL）磁阻（MR）传感器元件。

公开(公告)号：US08842389B2

公开(公告)日：2014-09-23

申请号：US12589597

申请日：2009-10-26

Applicant: Zhigang Bai ,  Yan Wu ,  Moris Dovek ,  Cherng Chyi Han

Inventor： Zhigang Bai ,  Yan Wu ,  Moris Dovek ,  Cherng Chyi Han

IPC: G11B5/11 ,  G11B5/31 ,  G11B5/127

CPC classification number: G11B5/6082 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/315 ,  G11B5/3163 ,  Y10T428/1171

Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a main pole shielded laterally by a pair of side shields, shielded above by a trailing shield and shielded optionally below by a leading shield. The shields and the seed layers on which they are formed are formed of materials having substantially the same physical characteristics including the same material composition, the same hardness, the same response to processes such as ion beam etching (IBE), chemical mechanical polishing (CMP), mechanical lapping, such as the slider ABS lapping, the same coefficient of thermal expansion (CTE) as well as the same Bs. Optionally, the trailing shield may be formed on a high Bs seed layer to provide the write head with improved down-track performance.

Abstract translation: 垂直磁记录（PMR）头被制造成具有由一对侧屏蔽横向屏蔽的主极，屏蔽在后面并由屏蔽罩屏蔽并且被前屏蔽罩屏蔽。 其形成的屏蔽层和种子层由具有相同物理特性的材料形成，包括相同的材料组成，相同的硬度，对离子束蚀刻（IBE），化学机械抛光（CMP） ），机械研磨，如滑块ABS研磨，相同的热膨胀系数（CTE）以及相同的Bs。 可选地，后屏蔽可以形成在高Bs种子层上，以向写头提供改进的下行轨迹性能。

公开(公告)号：US08305711B2

公开(公告)日：2012-11-06

申请号：US12660819

申请日：2010-03-03

Applicant: Min Li ,  Cherng-Chyi Han ,  Kenichi Takano ,  Joe Smyth

Inventor： Min Li ,  Cherng-Chyi Han ,  Kenichi Takano ,  Joe Smyth

IPC: G11B5/187 ,  G11B5/127 ,  G11B5/02

CPC classification number: G11B5/314 ,  G11B5/1278 ,  G11B2005/0024

Abstract: A microwave assisted magnetic recording writer is disclosed with an octagonal write pole having a top portion including a trailing edge that is self aligned to a spin transfer oscillator (STO). Leading and trailing edges are connected by two sidewalls each having three sections. A first section on each side is coplanar with the STO sidewalls and is connected to a sloped second section at a first corner. Each second section is connected to a third section at a second corner where the distance between second corners is greater than the distance between first corners. A method of forming the writer begins with a trapezoidal shaped write pole in an insulation layer. Two ion beam etch (IBE) steps are used to shape top and middle portions of the write pole and narrow the pole width to

Abstract translation: 公开了一种具有八角写磁极的微波辅助磁记录装置，其具有包括与自旋转移振荡器（STO）自对准的后沿的顶部。 前缘和后缘由具有三个部分的两个侧壁连接。 每侧的第一部分与STO侧壁共面，并且在第一角处连接到倾斜的第二部分。 每个第二部分连接到第二角处的第三部分，其中第二角之间的距离大于第一角之间的距离。 一种形成写入器的方法从绝缘层中的梯形写入极开始。 使用两个离子束蚀刻（IBE）步骤来形成写入极的顶部和中间部分，并将极宽度窄化到<50nm而不会破裂。 最后，在STO上形成一个后挡板。

公开(公告)号：US08184399B2

公开(公告)日：2012-05-22

申请号：US12924416

申请日：2010-09-27

Applicant: Yan Wu ,  Moris Dovek ,  Zhigang Bai ,  Cherng-Chyi Han ,  Jiun-Ting Lee ,  Po-Kang Wang

Inventor： Yan Wu ,  Moris Dovek ,  Zhigang Bai ,  Cherng-Chyi Han ,  Jiun-Ting Lee ,  Po-Kang Wang

IPC: G11B5/127

CPC classification number: G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.

Abstract translation: 制造具有可变厚度的锥形主极的垂直磁记录（PMR）头。 极的锥形部分在ABS尖端处，并且其可以由前缘或后缘处的斜面或两者形成。 锥形终止形成最大厚度的区域t1，其向近处延伸一定距离。 超过该最大厚度的区域t1，然后将极减小到恒定的最小厚度t2。 磁轭连接到恒定最小厚度的区域。 这个极设计需要更少的通量，因为它附着在磁轭上的磁极的较薄区域，而刚好在锥形ABS之前较厚的区域提供额外的磁通来驱动刚好在ABS之前的极点，因此高清晰度和场增益是 实现了，但边缘明显减少。

公开(公告)号：US08118990B2

公开(公告)日：2012-02-21

申请号：US11431261

申请日：2006-05-10

Applicant: Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

Inventor： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

IPC: C25D3/56

CPC classification number: C25D3/562 ,  C25D5/18 ,  G11B5/3163 ,  H01F41/26

Abstract: A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.

Abstract translation: 描述了通过电沉积制造FexCoyNiz（x = 60-71，y = 25-35，z = 0-5）膜的方法，其具有以其沉积形式的至少24个饱和磁化强度 kG，矫顽力小于0.3 Oe。 一个关键的特征是在适当的种子层的同时向镀浴中加入芳基亚硫酸盐。

公开(公告)号：US07898773B2

公开(公告)日：2011-03-01

申请号：US11345892

申请日：2006-02-02

Applicant: Cherng-Chyi Han ,  Min Li ,  Fenglin Liu ,  Jiun-Ting Lee

Inventor： Cherng-Chyi Han ,  Min Li ,  Fenglin Liu ,  Jiun-Ting Lee

IPC: G11B5/127

CPC classification number: G11B5/3163 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of side shields and shielded from above by an upper shield. The side shields are formed by a RIE process using specific gases applied to a shield layer through a masking layer formed of material that has a slower etch rate than the shield material. A masking layer of Ta, Ru/Ta, TaN or Ti, formed on a shield layer of NiFe and using RIE gases of CH3OH, CO or NH3 or their combinations, produces the desired result. The differential in etch rates maintains the opening dimension within the mask and allows the formation of a wedge-shaped trench within the shield layer that separates the layer into two shields. The pole tip is then plated within the trench and, being aligned by the trench, acquires the wedge-shaped cross-section of the trench. An upper shield is then formed above the side shields and pole.

Abstract translation: 垂直磁记录（PMR）头被制造成具有通过分离的一对侧屏蔽横向屏蔽的极尖并且被上屏蔽从上面屏蔽。 侧面屏蔽是通过RIE工艺形成的，其使用通过掩模层施加到屏蔽层上的特定气体，该屏蔽层由具有比屏蔽材料更慢的蚀刻速率的材料形成。 形成在NiFe的屏蔽层上并使用CH 3 OH，CO或NH 3的RIE气体或其组合的Ta，Ru / Ta，TaN或Ti的掩蔽层产生期望的结果。 蚀刻速率的差异保持了掩模内的开口尺寸，并且允许在屏蔽层内形成将该层分成两个屏蔽层的楔形沟槽。 然后将磁极尖端电镀在沟槽内，并且通过沟槽对准，获得沟槽的楔形横截面。 然后在侧屏和极上方形成上屏蔽。

公开(公告)号：US07657992B2

公开(公告)日：2010-02-09

申请号：US12001429

申请日：2007-12-11

Applicant: Cherng-Chyi Han ,  Kenichi Takano

Inventor： Cherng-Chyi Han ,  Kenichi Takano

IPC: G11B5/11 ,  G11B5/17

CPC classification number: G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

Abstract: A method of making a perpendicular magnetic recording (PMR) head with single or double coil layers and with a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

Abstract translation: 一种制造具有单线圈或双线圈层的垂直磁记录（PMR）头和缝合在主写屏蔽上的小写保护层的方法。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

公开(公告)号：US07646568B2

公开(公告)日：2010-01-12

申请号：US11317598

申请日：2005-12-23

Applicant: Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Yu-Hsia Chen ,  Min Li ,  Cherng-Chyi Han

Inventor： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Yu-Hsia Chen ,  Min Li ,  Cherng-Chyi Han

IPC: G11B5/127

CPC classification number: G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  Y10T29/49021

Abstract: Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.

Abstract translation: 已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。 虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。 这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

公开(公告)号：US20090116145A1

公开(公告)日：2009-05-07

申请号：US11982597

申请日：2007-11-02

Applicant: Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

Inventor： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

IPC: G11B5/127

CPC classification number: G11B5/3116 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3163

Abstract: A PMR writer with a tapered main pole layer and tapered non-magnetic top-shaping layer is disclosed that minimizes trailing shield saturation. A second non-magnetic top shaping layer may be employed to reduce the effective TH size while the bulk of the trailing shield is thicker to allow a larger process window for back end processing. A sloped surface with one end at the ABS and a second end 0.05 to 0.3 microns from the ABS is formed at a 10 to 80 degree angle to the ABS and includes a sloped surface on the upper portion of the main pole layer and on the non-magnetic top shaping layer. An end is formed on the second non-magnetic top shaping layer at the second end of the sloped surface followed by forming a conformal write gap layer and then depositing the trailing shield on the write gap layer and along the ABS.

Abstract translation: 公开了一种具有锥形主极层和锥形非磁性顶部成形层的PMR写入器，其使拖尾屏蔽饱和度最小化。 可以采用第二非磁性顶部成形层来减小有效的TH尺寸，同时尾部屏蔽的大部分较厚以允许用于后端处理的较大的工艺窗口。 在ABS处具有一端的倾斜表面和距离ABS的0.05至0.3微米的第二端与ABS形成10至80度的角度，并且包括在主极层的上部上的非倾斜表面， 磁顶成型层。 在倾斜表面的第二端处在第二非磁性顶部成形层上形成端部，随后形成共形写入间隙层，然后将后部屏蔽层沉积在写入间隙层上并沿着ABS。