公开(公告)号：US07618862B2

公开(公告)日：2009-11-17

申请号：US11847668

申请日：2007-08-30

Applicant: Joo-Hyeon Lee

Inventor： Joo-Hyeon Lee

IPC: H01L21/336 ,  H01L21/3205 ,  H01L21/28

CPC classification number: H01L29/7881 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/6656

Abstract: A method for manufacturing a flash memory device includes: a) forming a stack gate pattern composed of a tunnel oxide layer, a floating gate, ONO layers, and a control gate on a semiconductor substrate; b) conformably forming a first sidewall oxide layer made of a silicon oxide layer along both sidewalls of the stack gate pattern; c) performing a plasma nitride process for forming a nitride barrier layer in the first sidewall oxide layer; d) forming a sidewall nitride layer on the first sidewall oxide layer; e) conformably forming a second sidewall oxide layer on the sidewall nitride layer; and f) performing an etching process for forming a spacer which includes the first sidewall oxide layer, the nitride barrier layer, the sidewall nitride layer, and the second sidewall oxide layer. The flash memory device prevents data from being lost via the spacer equipped with a nitride barrier layer, resulting in increased reliability of a desired flash memory device.

Abstract translation: 一种闪存器件的制造方法，包括：a）在半导体衬底上形成由隧道氧化物层，浮栅，ONO层和控制栅极构成的堆叠栅极图案; b）沿堆叠栅极图案的两个侧壁顺应地形成由氧化硅层制成的第一侧壁氧化物层; c）执行用于在所述第一侧壁氧化物层中形成氮化物阻挡层的等离子体氮化物工艺; d）在第一侧壁氧化物层上形成侧壁氮化物层; e）在侧壁氮化物层上顺应地形成第二侧壁氧化物层; 以及f）执行用于形成包括所述第一侧壁氧化物层，所述氮化物阻挡层，所述侧壁氮化物层和所述第二侧壁氧化物层的间隔物的蚀刻工艺。 闪存器件防止通过配备有氮化物阻挡层的间隔件丢失数据，导致期望的闪存器件的可靠性增加。

公开(公告)号：US20090261354A1

公开(公告)日：2009-10-22

申请号：US12404871

申请日：2009-03-16

Applicant: Jae-Kook HA ,  Chang-Woong Chu ,  Joo Hyeon Lee

Inventor： Jae-Kook HA ,  Chang-Woong Chu ,  Joo Hyeon Lee

IPC: H01L33/00

CPC classification number: H01L51/5278 ,  H01L27/322 ,  H01L51/5036 ,  H01L51/5052 ,  H01L51/5088 ,  H01L51/5092

Abstract: The present invention relates to an organic light emitting element and an organic light emitting device including the same. An impurity layer close to an electrode is doped with a small amount, and an impurity layer for a p-n junction is doped with a large amount, such that a high current may flow under a low voltage.

Abstract translation: 本发明涉及一种有机发光元件和包括该有机发光元件的有机发光器件。 在电极附近的杂质层被掺杂少量，并且掺杂大量用于p-n结的杂质层，使得高电流可能在低电压下流动。

公开(公告)号：US07564060B2

公开(公告)日：2009-07-21

申请号：US11675832

申请日：2007-02-16

Applicant: Un-Cheol Sung ,  Joo-Hyeon Lee ,  Sang-Pil Lee

Inventor： Un-Cheol Sung ,  Joo-Hyeon Lee ,  Sang-Pil Lee

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC classification number: H01L27/3276

Abstract: A display includes a substrate, a plurality of first and second signal lines formed on the substrate and insulated from each other, a plurality of driving voltage lines formed with a same layer as the first signal lines, at least one driving voltage connection formed with a same layer as the second signal lines, at least one connecting member electrically connecting the driving voltage lines and the driving voltage connection, at least one first thin film transistor connected to the first and second signal lines, at least one second thin film transistor connected to the first thin film transistor and the driving voltage lines, at least one first electrode connected to the second thin film transistors, at least one second electrode opposing the first electrode, at least one organic light emitting member formed between the first electrode and the second electrode, and at least one assistant member formed between the connecting member and the second electrode.

Abstract translation: 显示器包括基板，形成在基板上并彼此绝缘的多个第一和第二信号线，形成有与第一信号线相同层的多个驱动电压线，形成有至少一个驱动电压连接的驱动电压连接 与第二信号线相同的层，至少一个电连接驱动电压线和驱动电压连接的连接构件，连接到第一和第二信号线的至少一个第一薄膜晶体管，至少一个第二薄膜晶体管，连接到 第一薄膜晶体管和驱动电压线，连接到第二薄膜晶体管的至少一个第一电极，与第一电极相对的至少一个第二电极，形成在第一电极和第二电极之间的至少一个有机发光部件 以及形成在连接构件和第二电极之间的至少一个辅助构件。

公开(公告)号：US07473497B2

公开(公告)日：2009-01-06

申请号：US11084327

申请日：2005-03-18

Applicant: In-sung Kim ,  Jung-hyeon Lee ,  Sung-gon Jung

Inventor： In-sung Kim ,  Jung-hyeon Lee ,  Sung-gon Jung

IPC: G03F1/00

CPC classification number: G03F1/32 ,  G03F1/36

Abstract: A phase shifting mask (PSM) for manufacturing a semiconductor device and a method of fabricating the same includes a transparent substrate, a main pattern formed on the transparent substrate and comprising a first phase shifting layer having a first optical transmittance greater than 0, and at least one assistant pattern formed on the transparent substrate proximal to the main pattern for phase-shifting by the same degree as the main pattern and having a second optical transmittance, which is less than the first optical transmittance.

公开(公告)号：US20080296151A1

公开(公告)日：2008-12-04

申请号：US11889540

申请日：2007-08-14

Applicant: Jong-Hyeon Lee ,  Young-Ho Kang ,  Sung-Chan Hwang ,  Han-Soo Lee ,  Eung-Ho Kim ,  Seong-Won Park

Inventor： Jong-Hyeon Lee ,  Young-Ho Kang ,  Sung-Chan Hwang ,  Han-Soo Lee ,  Eung-Ho Kim ,  Seong-Won Park

IPC: C25C7/00

CPC classification number: C25C7/005 ,  C25C3/34

Abstract: Disclosed herein is a continuous electrolytic refining device for metal uranium, the device comprising a cathode section fixed to the lower side of the heat radiation plate, and having a plurality of graphite cathodes; an anode section encompassing the cathode section to face the cathode section, rotatably fixed to the lower side of the heat radiation plate, and receiving the used nuclear fuel; an electrolytic cell receiving the cathode section and the anode section and filled with electrolytes so as to sink the cathode section and the anode section; an uranium collecting section collecting metal uranium deposited on and detached from the graphite cathode in the lower side of the cathode section inside the electrolytic cell and withdrawing the collected metal uranium to the outside of the electrolytic cell; and a transition metal collecting section coupled with the lower side of the electrolytic cell to withdraw the transition metal particles released from the anode section and collected in the lower side of the electrolytic cell, in order to collect high pure uranium deposits and metal transition elements created in an electrolysis process without stopping an electrolysis process, not including a scrapping process.

Abstract translation: 本文公开了一种用于金属铀的连续电解精炼装置，该装置包括固定到散热板的下侧的阴极部分，并具有多个石墨阴极; 阳极部分，其包围阴极部分以面对阴极部分，可旋转地固定到散热板的下侧，并且接收使用的核燃料; 接收阴极部分和阳极部分并充满电解质以使阴极部分和阳极部分沉降的电解池; 收集沉积在电解槽内的阴极部分下侧的石墨阴极上分离的金属铀并将收集的金属铀抽出到电解池外部的铀收集部分; 以及与电解槽的下侧连接的过渡金属收集部，以将从阳极部释放的过渡金属粒子收集在电解槽的下侧，以收集高纯铀沉积物和金属过渡元素 在电解过程中不停止电解过程，不包括报废过程。

公开(公告)号：US07457058B2

公开(公告)日：2008-11-25

申请号：US11451580

申请日：2006-06-13

Applicant: Woo-Seok Shim ,  Jung-Hyeon Lee ,  Young-Koog Han ,  Kwang-Sub Yoon ,  Si-Hyeung Lee

Inventor： Woo-Seok Shim ,  Jung-Hyeon Lee ,  Young-Koog Han ,  Kwang-Sub Yoon ,  Si-Hyeung Lee

IPC: G02B26/02

CPC classification number: G02B7/00 ,  G03F7/701 ,  G03F7/70825

Abstract: In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.

Abstract translation: 在具有该光学构件保持器和投影曝光设备的光学构件保持器和投影曝光设备中，从光源辐射的光束可以通过选择多个光学元件之一形成具有所需形状的光。 光学元件保持器可以包括用于支撑多个光学元件的支撑构件，用于移动或旋转支撑构件以选择一个光学元件的第一驱动部分和第二驱动部分，以旋转所选择的光学元件以调整 排列方向。 由所选择的光学元件形成的光可以被引导通过掩模版。

公开(公告)号：US20080171132A1

公开(公告)日：2008-07-17

申请号：US11938093

申请日：2007-11-09

Applicant: Joo-hyeon LEE ,  Chang-mo Park ,  Jin-koo Chung

Inventor： Joo-hyeon LEE ,  Chang-mo Park ,  Jin-koo Chung

IPC: C23C14/54

CPC classification number: C23C14/12 ,  C23C14/543

Abstract: An evaporation apparatus that is capable of determining the amount of organic material that is used for deposition of an organic layer (e.g. in an OLED) is presented. The apparatus evaporates an organic material through multiple stages and and includes: an evaporation source that evaporates the organic material and includes a heat source, a substrate supporter that supports a substrate, a sensor that senses a degree of evaporation of the organic material, a controller that calculates a deposition thickness of the organic material that is deposited during the stabilization stage, the deposition stage and the cooling stage by using the degree of evaporation sensed by the sensor, and a usage amount calculator that calculates a usage amount of the organic material by using a conversion factor between the deposition thickness of the organic material and the usage amount of the organic material, and the deposition thickness calculated by the controller.

Abstract translation: 提出了能够确定用于沉积有机层（例如在OLED中）的有机材料的量的蒸发装置。 该设备通过多个阶段蒸发有机材料，并且包括：蒸发有机材料并包括热源的蒸发源，支撑衬底的衬底支撑体，感测有机材料的蒸发程度的传感器，控制器 其计算通过使用由传感器感测到的蒸发度在稳定阶段，沉积阶段和冷却阶段期间沉积的有机材料的沉积厚度，以及使用量计算器，其通过以下步骤计算有机材料的使用量： 使用有机材料的沉积厚度与有机材料的使用量之间的转换因子以及由控制器计算的沉积厚度。

公开(公告)号：US20080118630A1

公开(公告)日：2008-05-22

申请号：US11937237

申请日：2007-11-08

Applicant: Chang-Mo PARK ,  Jin-Koo Chung ,  Joo-Hyeon Lee

Inventor： Chang-Mo PARK ,  Jin-Koo Chung ,  Joo-Hyeon Lee

IPC: C23C14/54

CPC classification number: C23C14/547 ,  C23C14/24

Abstract: Apparatus and a method for forming a thin film including a vacuum chamber, a substrate holder located on the inner upper side of the vacuum chamber to secure a substrate, an evaporation source located on the inner lower side of the vacuum chamber to evaporate a deposition material, an evaporation source shutter substantially confining the deposition material evaporated to the evaporation source, a sensor located within the vacuum chamber to detect the thickness of the deposition material deposited on itself, and a calculation portion calculating the thickness of the deposition material deposited on the evaporation source shutter using data detected by the sensor.

Abstract translation: 用于形成薄膜的装置和方法，所述薄膜包括真空室，位于所述真空室的内上侧以固定基板的基板保持器，位于所述真空室的内下侧以蒸发沉积材料的蒸发源 ，蒸发源快门，其基本上限制蒸发到蒸发源的沉积材料，位于真空室内的传感器，以检测沉积在其上的沉积材料的厚度，以及计算部分，其计算沉积在蒸发上的沉积材料的厚度 源快门使用由传感器检测到的数据。

公开(公告)号：US20080088583A1

公开(公告)日：2008-04-17

申请号：US11907711

申请日：2007-10-16

Applicant: Sung-jung Cho ,  Chang-kyu Choi ,  Yeun-bae Kim ,  Kwang-hyeon Lee ,  Young-hun Sung

Inventor： Sung-jung Cho ,  Chang-kyu Choi ,  Yeun-bae Kim ,  Kwang-hyeon Lee ,  Young-hun Sung

IPC: G09G5/00 ,  G06F3/14

CPC classification number: G06F1/1613 ,  G06F1/1694 ,  G06F3/017 ,  G06F3/0482 ,  G06F3/0485 ,  G06F2200/1637

Abstract: Provided are an apparatus and method for moving a list on a picture plane. The apparatus for moving a list on a picture plane includes a centripetal acceleration control module providing acceleration in the direction in which an image moves, with respect to an amount of movement of the center of the image relative to the center of a picture plane of a digital device, a movement resistance control module calculating a resistance corresponding to the provided acceleration, and applying the resistance to the image, a picture plane movement parameter control module calculating the movement speed of the image displayed on the picture plane and the distance moved by the center of the image, based on at least one of a current input tilt angle, the acceleration value, and the resistance value, thereby updating the movement speed and the distance moved by the center of the image.

Abstract translation: 提供了用于在画面上移动列表的装置和方法。 用于在画面上移动列表的装置包括：向心加速度控制模块，其相对于图像中心相对于图像平面的中心的移动量，在图像移动的方向上提供加速度 数字装置，计算对应于所提供的加速度的电阻的运动阻力控制模块，以及对图像施加电阻;计算显示在图像平面上的图像的移动速度的图像平面移动参数控制模块， 基于当前输入倾斜角度，加速度值和电阻值中的至少一个，从而更新移动速度和由图像中心移动的距离的图像中心。

公开(公告)号：US07262103B2

公开(公告)日：2007-08-28

申请号：US10740136

申请日：2003-12-18

Applicant: Joon Hyeon Lee ,  Woon Yong Kim

Inventor： Joon Hyeon Lee ,  Woon Yong Kim

IPC: H01L21/336

CPC classification number: H01L29/665 ,  H01L21/28518 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823462 ,  H01L29/6656 ,  Y10S438/954 ,  Y10S438/981

Abstract: Disclosed is a method for forming salicide in a semiconductor device. The method comprises the steps of: forming a first and a second gate oxide film and in a non-salicide region and a salicide region, the first gate oxide film being thicker than the second gate oxide film; forming a conductive layer and a nitride based hard mask layer, and then selectively removing the conductive layer, the hard mask layer, the first gate oxide film, and the second gate oxide film, thereby forming gate electrodes and simultaneously exposing an active region of the salicide region; forming a spacer oxide film on an upper surface, except for the hard mask layer, of a second resultant structure; selectively removing the spacer oxide film, thereby forming a spacer and simultaneously exposing the active region of the salicide region; removing the hard mask layer; and forming a salicide film on the upper surfaces of the gate electrodes and on the surface of the active region in the salicide region. Therefore, a non-salicide region and a salicide region can be formed selectively and simultaneously in a one-chip semiconductor device, so that the number of steps for a salicide forming process can be reduced.

Abstract translation: 公开了一种在半导体器件中形成硅化物的方法。 该方法包括以下步骤：形成第一和第二栅极氧化膜，并且在非自对准硅化物区域和自对准硅化物区域中，所述第一栅极氧化物膜比所述第二栅极氧化物膜厚; 形成导电层和氮化物基硬掩模层，然后选择性地去除导电层，硬掩模层，第一栅极氧化膜和第二栅极氧化物膜，由此形成栅电极并同时曝光 自杀地区; 在除了硬掩模层之外的上表面上形成第二结构结构的间隔氧化膜; 选择性地去除间隔氧化膜，从而形成间隔物并同时暴露自对准区域的活性区域; 去除硬掩模层; 以及在所述栅电极的上表面和所述自对准区域中的有源区的表面上形成自对准硅膜。 因此，可以在单芯片半导体器件中选择性和同时地形成非自对准硅化物区域和自对准硅化物区域，从而可以减少用于硅化物形成工艺的步骤数量。