公开(公告)号：US07362124B2

公开(公告)日：2008-04-22

申请号：US11541577

申请日：2006-10-03

Applicant: Jong Dam Kim ,  Hyun Kyu Lee ,  Yong Jin Cho ,  See Hwa Jeong

Inventor： Jong Dam Kim ,  Hyun Kyu Lee ,  Yong Jin Cho ,  See Hwa Jeong

IPC: G01R31/00

CPC classification number: G09G3/006

Abstract: A method and apparatus are provided for inspecting an electrical defectiveness of a liquid crystal display substrate. The method includes shorting ESD protection devices with a conductive shorting bar to form a current path on each of signal wirings of the substrate, supplying a current to the signal wirings, and determining a defectiveness of the signal wirings depending on the current flowing on the signal wirings.

Abstract translation: 提供了一种用于检查液晶显示基板的电气缺陷性的方法和装置。 该方法包括用导电短路棒短路ESD保护装置，以在基板的每个信号布线上形成电流路径，向信号布线提供电流，以及根据在信号上流动的电流来确定信号布线的缺陷 布线。

公开(公告)号：US20080088371A1

公开(公告)日：2008-04-17

申请号：US11889419

申请日：2007-08-13

Applicant: Seung-Bin You ,  Yong-JIn Cho

Inventor： Seung-Bin You ,  Yong-JIn Cho

IPC: H03F3/217

CPC classification number: H03F3/2171

Abstract: A digital amplifier, a reference voltage generator for reducing a DC component of an amplified pulse width modulated signal of a digital amplifier, and a method of reducing a DC component of an amplified pulse width modulated signal applied to an input node of a load are described in this disclosure. The digital amplifier includes a pulse width modulation signal generator receiving an input signal and generating an amplified pulse width modulated signal, a filter filtering the amplified pulse width modulated signal and providing the filtered amplified pulse width modulated signal to an input node of a load, and a reference voltage generator providing a reference voltage to a reference node of the load to reduce a DC component of the filtered amplified pulse width modulated signal provided to the input node of the load.

Abstract translation: 描述数字放大器，用于减小数字放大器的放大的脉宽调制信号的DC分量的参考电压发生器以及减小施加到负载的输入节点的经放大的脉宽调制信号的DC分量的方法 在本公开中。 数字放大器包括接收输入信号并产生放大的脉宽调制信号的脉冲宽度调制信号发生器，对经放大的脉宽调制信号进行滤波的滤波器，并将滤波后的放大脉宽调制信号提供给负载的输入节点，以及 参考电压发生器，将参考电压提供给负载的参考节点，以减小提供给负载的输入节点的滤波后的放大脉宽调制信号的直流分量。

公开(公告)号：US20080087887A1

公开(公告)日：2008-04-17

申请号：US11905178

申请日：2007-09-27

Applicant: Gyou-Jin Cho ,  Jeong-Ju Kim ,  Eun-Jung Choi ,  Nam-Young Kim ,  Chan-Seok Park ,  Hoe-Taek Yang

Inventor： Gyou-Jin Cho ,  Jeong-Ju Kim ,  Eun-Jung Choi ,  Nam-Young Kim ,  Chan-Seok Park ,  Hoe-Taek Yang

IPC: H01L51/00 ,  C08G77/26

CPC classification number: H01L51/005 ,  B82Y10/00 ,  C07D257/02 ,  H01L51/0005 ,  H01L51/0068 ,  H01L51/0077 ,  H01L51/0591 ,  H01L51/0595

Abstract: Disclosed are a compound which works as electronic materials such as a molecular memory, a molecular switch, a molecular rectifier, a molecular wire, and so on, and a molecular electronic device including the same. The compound for molecular electronic device has the structure of following Formula 1, (MnRM)n   wherein, R is a single molecule having an electrical conductivity, M is independently a repeating unit constituting a polymer having an electrical conductivity, and n is independently an integer ranging from 100 to 500.

Abstract translation: 公开了作为电子材料如分子记忆，分子开关，分子整流器，分子线等的化合物和包括其的分子电子器件。 分子电子器件用化合物具有以下结构：式（1）其中，R是具有导电性的单分子，M独立地是构成聚合物的重复单元 具有导电性，n独立地为100-500的整数。

公开(公告)号：US20080081411A1

公开(公告)日：2008-04-03

申请号：US11616582

申请日：2006-12-27

Applicant: Hye-Jin Cho ,  Kyu-Charn Park ,  Choong-Ho Lee ,  Byung-Yong Choi

Inventor： Hye-Jin Cho ,  Kyu-Charn Park ,  Choong-Ho Lee ,  Byung-Yong Choi

IPC: H01L21/336

CPC classification number: H01L27/115 ,  H01L27/11521

Abstract: In a method of manufacturing a non-volatile memory device, a conductive structure is formed on a substrate. The conductive structure includes a tunnel oxide pattern, a first conductive pattern, a pad oxide pattern and a hard mask pattern. A trench is formed on the substrate using the conductive structure as an etching mask. An inner oxide layer is formed on an inner wall of the trench and sidewalls of the tunnel oxide pattern and the first conductive pattern. The inner oxide layer is cured, thereby forming a silicon nitride layer on the inner oxide layer. A device isolation pattern is formed in the trench, and the hard mask pattern and the pad oxide pattern are removed from the substrate. A dielectric layer and a second conductive pattern are formed on the substrate. Accordingly, the silicon nitride layer prevents-hydrogen (H) atoms from leaking into the device isolation pattern.

Abstract translation: 在制造非易失性存储器件的方法中，在衬底上形成导电结构。 导电结构包括隧道氧化物图案，第一导电图案，衬垫氧化物图案和硬掩模图案。 使用导电结构作为蚀刻掩模在衬底上形成沟槽。 在沟槽的内壁和隧道氧化物图案的侧壁和第一导电图案上形成内部氧化物层。 内部氧化物层被固化，从而在内部氧化物层上形成氮化硅层。 在沟槽中形成器件隔离图案，并且从衬底去除硬掩模图案和衬垫氧化物图案。 在基板上形成电介质层和第二导电图案。 因此，氮化硅层防止氢（H）原子泄漏到器件隔离图案中。

公开(公告)号：US20080049049A1

公开(公告)日：2008-02-28

申请号：US11763058

申请日：2007-06-14

Applicant: Ji-yong PARK ,  Sang-kyun IM ,  Myung-jin CHO ,  Alexander ANUFRIENKO

Inventor： Ji-yong PARK ,  Sang-kyun IM ,  Myung-jin CHO ,  Alexander ANUFRIENKO

IPC: H04N5/335

CPC classification number: G09G3/20 ,  G09G2320/0233 ,  G09G2320/0271 ,  G09G2320/0626 ,  G09G2360/16 ,  H04N5/20 ,  H04N17/04

Abstract: A control method and a display apparatus are provided. The control method includes dividing a display part into sections; detecting output luminance levels which correspond to grayscale levels of an input video signal on a section by section basis; converting the output luminance levels by calculating calibration coefficients on a section by section basis and applying the calculated calibration coefficients to the respective detected output luminance levels to control respective maximum luminance levels of the detected output luminance levels to be a permitted luminance level; and setting up a calibration table based on the respective converted luminance levels and a reference luminance level. The display apparatus includes a display part which comprises a plurality of sections; a signal processing part; and a controller which detects output luminance levels on a section by section basis, converts the output luminance levels, and sets up a calibration table.

Abstract translation: 提供了一种控制方法和显示装置。 控制方法包括将显示部分分割成多个部分; 检测对应于输入视频信号的灰度级的输出亮度级; 通过逐段计算校准系数来转换输出亮度水平，并将所计算的校准系数应用于各个检测的输出亮度水平，以将检测的输出亮度水平的各个最大亮度水平控制为允许的亮度水平; 以及基于相应的转换的亮度水平和参考亮度水平设置校准表。 显示装置包括显示部分，其包括多个部分; 信号处理部; 以及基于逐段检测输出亮度水平的控制器，转换输出亮度水平，并设置校准表。

公开(公告)号：US20080039610A1

公开(公告)日：2008-02-14

申请号：US11682806

申请日：2007-03-06

Applicant: Jin KIM ,  Jin Cho ,  Keun Lee ,  Jae Kim

Inventor： Jin KIM ,  Jin Cho ,  Keun Lee ,  Jae Kim

IPC: C08G67/02 ,  C07D303/08

CPC classification number: C08G65/22 ,  C07D303/24 ,  C08G65/2609

Abstract: Disclosed are novel compounds that can be used as an energetic binder used for improving the performance and the properties of a high explosive, and a preparation method thereof. More specifically, provided are glycidyl dinitropropyl formal of chemical formula IV having a nitro group (—NO2) as an energy group and having no hydrogen bonding to carbon to which the nitro group is binding, poly(glycidyl dinitropropyl formal) of chemical formula V polymerized using the glycidyl dinitropropyl formal as a monomer, and a preparation method thereof.

Abstract translation: 公开了可用作提高高爆炸性能和性能的能量粘合剂的新型化合物及其制备方法。 更具体地，提供具有硝基（-NO 2 2 N）作为能量基并且与硝基结合的碳没有氢键的化学式IV的缩水甘油基二硝基丙基甲醛，聚（缩水甘油基 使用缩水甘油基二硝基丙基甲缩醛作为单体聚合的化学式V的二硝基丙基甲醛及其制备方法。

公开(公告)号：US07329581B2

公开(公告)日：2008-02-12

申请号：US11080731

申请日：2005-03-16

Applicant: Hee-soo Kang ,  Dong-gun Park ,  Choong-ho Lee ,  Hye-jin Cho ,  Young-joon Ahn

Inventor： Hee-soo Kang ,  Dong-gun Park ,  Choong-ho Lee ,  Hye-jin Cho ,  Young-joon Ahn

IPC: H01L21/8234

CPC classification number: H01L27/11 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1104 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7851

Abstract: In one aspect, a semiconductor substrate is provided having a cell area and a peripheral circuit area, and a mask layer is formed over the cell area and the peripheral circuit area of the semiconductor substrate. A FinFET gate is fabricated by forming a first opening in the mask layer to expose a first gate region in the cell area of the semiconductor substrate, and then forming a FinFET gate electrode in the first opening using a damascene process. A MOSFET gate fabricated by forming a second opening in the mask layer to expose a second gate region in the peripheral circuit area of the semiconductor substrate, and then forming a MOSFET gate electrode in the second opening using a damascene process.

Abstract translation: 一方面，提供具有单元区域和外围电路区域的半导体基板，并且在半导体基板的单元区域和外围电路区域上形成掩模层。 通过在掩模层中形成第一开口以暴露半导体衬底的单元区域中的第一栅极区域，然后使用镶嵌工艺在第一开口中形成FinFET栅电极来制造FinFET栅极。 通过在掩模层中形成第二开口以暴露半导体衬底的外围电路区域中的第二栅极区域，然后使用镶嵌工艺在第二开口中形成MOSFET栅电极来制造MOSFET栅极。

公开(公告)号：US07326389B2

公开(公告)日：2008-02-05

申请号：US11021628

申请日：2004-12-23

Applicant: Hyun Jong Shin ,  Yeon Shick Yoo ,  Byung Yul Choi ,  Young Hyun Choi ,  Young Jin Cho ,  Duk Ki Kim ,  Joo Yeon Park ,  Kwang Ho Park

Inventor： Hyun Jong Shin ,  Yeon Shick Yoo ,  Byung Yul Choi ,  Young Hyun Choi ,  Young Jin Cho ,  Duk Ki Kim ,  Joo Yeon Park ,  Kwang Ho Park

IPC: B01J8/04 ,  B01J8/02 ,  B01J19/00 ,  B01J21/00 ,  F28D7/00

CPC classification number: C07C51/252 ,  B01J8/0453 ,  B01J8/067 ,  B01J23/002 ,  B01J23/8876 ,  B01J23/8885 ,  B01J35/0006 ,  B01J35/023 ,  B01J2208/025 ,  B01J2523/00 ,  C07C45/34 ,  C07C45/35 ,  C07C47/22 ,  C07C57/04 ,  B01J2523/17 ,  B01J2523/24 ,  B01J2523/55 ,  B01J2523/56 ,  B01J2523/68 ,  B01J2523/69 ,  B01J2523/13 ,  B01J2523/3712 ,  B01J2523/54 ,  B01J2523/842 ,  B01J2523/845 ,  B01J2523/847

Abstract: Disclosed is a shell-and-tube reactor that may be used in a method for producing unsaturated aldehydes and/or unsaturated acids from olefins by means of fixed-bed catalytic partial oxidation. The reactor includes at least one reaction zone of a first-step reaction zone for producing unsaturated aldehydes as a main product and a second-step reaction zone for producing unsaturated acids as a main product, and at least one reaction zone of the reaction zones comprises two or more catalytic layers, each of the catalytic layers being packed with a formed product of catalyst as secondary particles, wherein the secondary particles in each catalytic layer are formed of primary particles of a catalytically active component having a different particle size, and the particle size of primary particles of the catalytically active component is controlled so that it decreases from an inlet of the reactor to an outlet of the reactor. A method for producing unsaturated aldehydes and/or unsaturated fatty acids from olefins using the same reactor is also disclosed. According to the present invention, it is possible to control the temperature efficiently at a hot spot, thereby permitting a catalyst to be used stably, and to produce unsaturated aldehydes and/or unsaturated fatty acids with high yield.

Abstract translation: 公开了一种可用于通过固定床催化部分氧化从烯烃生产不饱和醛和/或不饱和酸的方法中的管壳式反应器。 反应器包括用于产生不饱和醛作为主要产物的第一步反应区和用于生产不饱和酸作为主要产物的第二步反应区的至少一个反应区，反应区的至少一个反应区包括 两个或更多个催化剂层，每个催化层填充有作为二次颗粒的催化剂的成形产物，其中每个催化剂层中的二次颗粒由具有不同粒度的催化活性组分的初级颗粒形成，并且颗粒 控制催化活性组分的初级颗粒的尺寸，使其从反应器的入口减少到反应器的出口。 还公开了使用相同的反应器由烯烃生产不饱和醛和/或不饱和脂肪酸的方法。 根据本发明，可以在热点有效地控制温度，从而允许稳定地使用催化剂，并以高产率生产不饱和醛和/或不饱和脂肪酸。

公开(公告)号：US20070264770A1

公开(公告)日：2007-11-15

申请号：US11618796

申请日：2006-12-30

Applicant: Keum Bum Lee ,  Hai Won Kim ,  Ho Jin Cho ,  Jun Soo Chang ,  Eun A. Lee ,  Dong Su Park

Inventor： Keum Bum Lee ,  Hai Won Kim ,  Ho Jin Cho ,  Jun Soo Chang ,  Eun A. Lee ,  Dong Su Park

IPC: H01L21/8242 ,  H01L29/92

CPC classification number: H01L21/3141 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0234 ,  H01L27/10852 ,  H01L28/91

Abstract: A method for forming a capacitor includes forming a concave mold over a semiconductor substrate. A storage node is formed on the concave mold. A dielectric layer including a zirconium oxide (ZrO2) layer is deposited over the storage node at a first temperature. A radical pile-up treatment on the dielectric layer is performed in an atmosphere including radicals at a second temperature higher than the first temperature to induce crystallization of the dielectric layer. A plate node is formed over the dielectric layer.

Abstract translation: 形成电容器的方法包括在半导体衬底上形成凹模。 存储节点形成在凹模上。 包含氧化锆（ZrO 2）层的电介质层在第一温度下沉积在存储节点上。 在包括自由基的气氛中，在高于第一温度的第二温度下进行介电层上的自由基堆积处理，以诱导电介质层的结晶。 在该电介质层上形成一个平板节点。

公开(公告)号：US20070237545A1

公开(公告)日：2007-10-11

申请号：US11520941

申请日：2006-09-13

Applicant: Myung-Lae Cho ,  Michael Han ,  Han-Shik Kim ,  Seong-Jin Cho ,  Jun-Ho Jeon

Inventor： Myung-Lae Cho ,  Michael Han ,  Han-Shik Kim ,  Seong-Jin Cho ,  Jun-Ho Jeon

IPC: G03G15/00

CPC classification number: F16D1/10 ,  G03G15/751

Abstract: A photosensitive drum for a printer cartridge, which can be easily mounted on a printer cartridge of which the positions of drum connectors are fixed, is disclosed. The photosensitive drum for a printer cartridge comprises a cylindrical drum having a photosensitive layer on a cylindrical surface thereof; and a pair of rotation shafts which is respectively mounted on the sides of the cylindrical drum for rotating and supporting the cylindrical drum, wherein at least one of the rotation shafts is insert-fitted to the side of the cylindrical drum.

Abstract translation: 公开了一种用于打印机墨盒的感光鼓，其可以容易地安装在其中鼓式连接器的位置被固定的打印机墨盒上。 用于打印机墨盒的感光鼓包括在其圆柱形表面上具有感光层的圆柱形滚筒; 以及一对旋转轴，其分别安装在圆筒形滚筒的侧面上，用于旋转和支撑圆柱形滚筒，其中至少一个旋转轴嵌入到圆筒形滚筒的侧面。