摘要:
A voltage-controlled oscillator includes an oscillating unit configured to output first and second output clock signals at first and second nodes, respectively, the first and second output clock signals having a frequency that is variable in response to a control voltage. An active element unit connected to the oscillating unit is configured to maintain oscillation of the oscillating unit. A bias current generating unit connected to the active element unit at a bias node provides a bias current to the bias node and is adapted to adjust the bias current in response to a control code. First and second capacitor blocks connected to the oscillating unit and the active element unit provide first and second load capacitances, respectively, to the first and second nodes, respectively, in response to the control code.
摘要:
A data transmission/reception system can lessen a skew between data and clock signal by substantially reducing a data reception error. The data transmission/reception system using a first clock signal and a second clock signal having a phase difference corresponding to a half of data bit period as compared with the first clock signal includes a skew information extracting unit and a timing control unit. The skew information extracting unit obtains and outputs skew edge information data necessary for a skew removal by sampling data transmitted in a training operating mode as one of the first and second clock signals in a receiving side. The timing control unit receives the skew edge information data through a transmitting side, and compares its phase with a phase of the transmitted data and controls a timing between transmission data and a transmission sampling clock signal applied to a transmission output unit according to the phase comparison result. Time taken in a training operation can be relatively shortened, and circuits of the receiving side can be simplified and power consumption can be relatively reduced.
摘要:
A semiconductor memory device includes a memory cell array, an address control unit and a logic circuit. The memory cell array includes a plurality of banks which are divided into a first bank block and a second bank block. The address control unit accesses the memory cell array. The logic circuit controls the address control unit based on a command and an address signal such that the first and second bank blocks commonly operate in a first operation mode, and the first and second bank blocks individually operate in a second operation mode.
摘要:
A clock and data recovery (CDR) circuit comprises a data sampling unit which latches serial data input in response to data clock signals, and outputs a plurality of sampling data, the data clock signals maintaining a constant phase difference and having mutually different phases, an edge sampling unit which outputs an edge sampling signal generated by sampling edge information of the serial data in response to a selection edge clock signal, the selection edge clock signal being randomly selected from among a plurality of edge clock signals, a data selection unit which selects at least two consecutive sampling data from among the plurality of sampling data, and a decoding unit which performs a logical operation of the sampling data selected by the data selection unit and the edge sampling signal.
摘要:
A circuit for eliminating a skew between data and a clock signal in an interface between a semiconductor memory device and a memory controller includes an edge information storage unit which stores edge information output from the semiconductor memory device, a pseudo data pattern generating unit which outputs pseudo data including a pattern similar to actually transmitted data, a phase detecting unit which receives the edge information from the edge information storage unit and the pseudo data from the pseudo data pattern generating unit to detect a phase difference between the data and the clock signal and generate a corresponding detection result, and a phase control unit which controls a phase of the clock signal according to the corresponding detection result from the phase detecting unit, so as to eliminate a per-data input/output pin skew in a data write and read operation of the semiconductor memory device.
摘要:
A memory device is configured to operate in first and second data input/output modes. The memory device includes a first electrode pad, a second electrode pad, a clock signal line, a first switching unit, and a second switching unit. The clock signal line is configured to transmit a clock to an integrated circuit inside the memory device. The first switching unit switches to electrically connect the first electrode pad and the clock signal line in response to a control signal occurring for the first data input/output mode. The second switching unit switches to electrically connect the second electrode pad and the clock signal line in response to an inverse signal of the control signal occurring for the second data input/output mode.
摘要:
A circuit for eliminating a skew between data and a clock signal in an interface between a semiconductor memory device and a memory controller includes an edge information storage unit which stores edge information output from the semiconductor memory device, a pseudo data pattern generating unit which outputs pseudo data including a pattern similar to actually transmitted data, a phase detecting unit which receives the edge information from the edge information storage unit and the pseudo data from the pseudo data pattern generating unit to detect a phase difference between the data and the clock signal and generate a corresponding detection result, and a phase control unit which controls a phase of the clock signal according to the corresponding detection result from the phase detecting unit, so as to eliminate a per-data input/output pin skew in a data write and read operation of the semiconductor memory device.
摘要:
DC balance encoded data is transmitted by transmitting a preamble of dummy data that is configured to provide an intermediate number of bits of a given logic value that is at least one bit of the given logic value but less than a maximum number of bits of the given logic value in the DC balance encoded data, to thereby reduce the simultaneous switching noise that is caused by transmission of a first word of DC balance encoded data. The preamble may contain one or more words of fixed and/or variable dummy data.
摘要:
A phase-locked loop (PLL) having a bias generator capable of reducing noise is provided. In the PLL, a voltage controlled oscillator is driven using a regulator. The bias generator, which applies a bias voltage to the regulator, is configured to have opposite power noise characteristics to the power noise characteristics of the regulator, such that the occurrence of jitter in the PLL is reduced.
摘要:
The invention is directed to data receivers such as those used in semiconductor devices. Embodiments of the invention provide a loop unrolling DFE receiver that uses analog control signals from each equalizer to avoid timing delays associated with the use of latched digital control signals in the conventional art. In addition, embodiments of the invention implement each equalizer with a single sense amplifier based flip flop (SAFF) to reduce circuit size and power consumption.