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    Fuel cell system
    91.
    发明申请
    Fuel cell system 有权
    燃料电池系统

    公开(公告)号：US20070202368A1

    公开(公告)日：2007-08-30

    申请号：US11711010

    申请日：2007-02-27

    Applicant: Ju-Yong Kim ,  Sung-Chul Lee ,  Chan-Ho Lee ,  Jin-Goo Ahn ,  Jin-Kwang Kim

    Inventor： Ju-Yong Kim ,  Sung-Chul Lee ,  Chan-Ho Lee ,  Jin-Goo Ahn ,  Jin-Kwang Kim

    IPC: H01M8/06

    CPC classification number: H01M8/0618 ,  H01M8/04014 ,  H01M8/1004 ,  H01M8/2475 ,  H01M2008/1095 ,  H01M2250/30 ,  Y02B90/18

    Abstract: A fuel cell system includes a fuel cell body to generate electrical energy using a reaction of hydrogen and oxygen; a reformer to generate a reformed gas containing hydrogen by reforming fuel and to supply the reformed gas to the fuel cell body; a fuel tank to store the fuel in a partially liquefied state and to supply the fuel to the reformer; a case to encase the fuel cell body and the reformer; and a refrigeration unit attached to the case to store ambient air of the fuel tank, the ambient air of the fuel tank being cooled by latent heat of vaporization of the fuel.

    Abstract translation: 燃料电池系统包括使用氢和氧的反应产生电能的燃料电池体; 重整器，通过重整燃料生成含氢气的重整气体，并向燃料电池体供给重整气体; 燃料箱，用于储存处于部分液化状态的燃料并将燃料供应至重整器; 封装燃料电池体和重整器的情况; 以及附接到壳体以储存燃料箱的环境空气的制冷单元，燃料箱的环境空气被燃料的蒸发潜热所冷却。

    Perpendicular magnetic recording medium
    92.
    发明申请
    Perpendicular magnetic recording medium 审中-公开
    垂直磁记录介质

    公开(公告)号：US20070196697A1

    公开(公告)日：2007-08-23

    申请号：US11581326

    申请日：2006-10-17

    Applicant: Taek-dong Lee ,  Young-wook Tahk ,  Sung-chul Lee

    Inventor： Taek-dong Lee ,  Young-wook Tahk ,  Sung-chul Lee

    IPC: G11B5/66

    CPC classification number: G11B5/667 ,  G11B5/7325

    Abstract: A perpendicular magnetic recording medium is provided, the perpendicular magnetic recording medium including: a substrate; a first soft magnetic underlayer formed on the substrate; a perpendicular anisotropic middle layer that is formed on the first soft magnetic underlayer and has perpendicular magnetic anisotropy; a second soft magnetic underlayer formed on the perpendicular anisotropic middle layer; and a perpendicular magnetic recording layer formed on the second soft magnetic underlayer.

    Abstract translation: 提供垂直磁记录介质，垂直磁记录介质包括：基板; 形成在所述基板上的第一软磁性底层; 垂直各向异性中间层，形成在第一软磁性底层上，具有垂直的磁各向异性; 形成在垂直各向异性中间层上的第二软磁性底层; 以及形成在第二软磁性底层上的垂直磁记录层。

    Semiconductor memory device and fabrication method thereof
    94.
    发明授权
    Semiconductor memory device and fabrication method thereof 有权
    半导体存储器件及其制造方法

    公开(公告)号：US06479346B1

    公开(公告)日：2002-11-12

    申请号：US09544214

    申请日：2000-04-07

    Applicant: Sang-Bai Yi ,  Jae-Min Yu ,  Sung-Chul Lee

    Inventor： Sang-Bai Yi ,  Jae-Min Yu ,  Sung-Chul Lee

    IPC: H01L21336

    CPC classification number: H01L27/11526 ,  H01L27/105 ,  H01L27/11539 ,  Y10S257/903

    Abstract: In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.

    Abstract translation: 在包括存储单元和外围电路单元的半导体存储器件中，存储单元具有形成在半导体衬底上的第一栅极结构; 第一导电类型的第一杂质区域形成在栅极结构的第一侧上的衬底中; 以及形成在所述栅极结构的第二侧上的所述衬底中的第二杂质区域，所述第二杂质区域包括：第一导电类型的第三杂质区域，第三杂质区域和第三杂质区域之间的第一导电类型的第四杂质区域， 栅极结构的第二侧和与第四杂质区相邻形成的第二导电类型的晕圈离子区。

    Method for fabricating flash memory device and peripheral area
    95.
    发明授权
    Method for fabricating flash memory device and peripheral area 有权
    制造闪存器件和周边区域的方法

    公开(公告)号：US06235585B1

    公开(公告)日：2001-05-22

    申请号：US09306436

    申请日：1999-05-06

    Applicant: Sung Chul Lee ,  Jae Seung Choi

    Inventor： Sung Chul Lee ,  Jae Seung Choi

    IPC: H01L218247

    CPC classification number: H01L27/11526 ,  H01L27/11536 ,  Y10S438/981

    Abstract: Methods for fabricating a flash memory device which improves both charge retaining characteristics and characteristics of a gate insulating film are disclosed. The methods include the steps of respectively forming a tunneling oxide film and a peripheral oxide film on a cell and peripheral areas of a semiconductor substrate; forming a floating gate line on the tunneling oxide film; forming a first insulating film on a surface of the floating gate line; forming a second insulating film on an entire surface of the semiconductor substrate; forming a third insulating film on the second insulating film so that the third insulating film is thicker than the peripheral oxide film; removing the third insulating film and the second insulating film from the peripheral area by wet etching processes; removing the peripheral oxide film by a wet etching process; forming a gate insulating film on the surface of the semiconductor substrate in the peripheral area; depositing a conductive layer on the entire surface of the semiconductor substrate; selectively removing portions of the conductive layer, the third insulating film, the second insulating film, the first insulating film, and the floating gate line to form a control gate and a floating gate in the cell area, and a gate electrode of a thin film transistor in the peripheral area; and forming source/drain impurity areas within the surface of the semiconductor substrate at both sides of the control gate and floating gate and at both sides of the gate electrode.

    Abstract translation: 公开了一种提高栅极绝缘膜的电荷保持特性和特性的闪存器件的制造方法。 这些方法包括在半导体衬底的单元和外围区域上分别形成隧穿氧化物膜和周围氧化膜的步骤; 在隧道氧化膜上形成浮栅; 在所述浮栅线的表面上形成第一绝缘膜; 在所述半导体衬底的整个表面上形成第二绝缘膜; 在所述第二绝缘膜上形成第三绝缘膜，使得所述第三绝缘膜比所述周边氧化膜厚; 通过湿法蚀刻工艺从周边区域去除第三绝缘膜和第二绝缘膜; 通过湿蚀刻工艺去除周围氧化膜; 在周边区域的半导体衬底的表面上形成栅极绝缘膜; 在所述半导体衬底的整个表面上沉积导电层; 选择性地去除所述导电层，所述第三绝缘膜，所述第二绝缘膜，所述第一绝缘膜和所述浮栅的部分，以在所述单元区域中形成控制栅极和浮置栅极，以及薄膜的栅电极 晶体管在周边区域; 以及在所述半导体衬底的所述表面内的所述控制栅极和浮置栅极的两侧以及所述栅电极的两侧处形成源极/漏极杂质区域。

    Magnetic memory device
    97.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US10090458B2

    公开(公告)日：2018-10-02

    申请号：US15617012

    申请日：2017-06-08

    Applicant: Sung Chul Lee ,  Ki Woong Kim ,  Sang Hwan Park ,  Sechung Oh

    Inventor： Sung Chul Lee ,  Ki Woong Kim ,  Sang Hwan Park ,  Sechung Oh

    IPC: H01L27/00 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32 ,  H01F10/12

    Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.

    Magnetic memory devices
    98.
    发明授权
    Magnetic memory devices 有权
    磁存储器件

    公开(公告)号：US09437654B2

    公开(公告)日：2016-09-06

    申请号：US14715633

    申请日：2015-05-19

    Applicant: Sung-Chul Lee ,  Kwang-Seok Kim ,  Kee-Won Kim ,  Young-Man Jang ,  Ung-Hwan Pi

    Inventor： Sung-Chul Lee ,  Kwang-Seok Kim ,  Kee-Won Kim ,  Young-Man Jang ,  Ung-Hwan Pi

    IPC: H01L27/22 ,  H01L43/10

    CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.

    Abstract translation: 磁存储器件可以包括衬底，衬底上的电路器件，电连接到电路器件的多个下电极，通常设置在多个下电极上的磁隧道结（MTJ）结构，以及多个上电极 MTJ结构上的电极。 MTJ结构可以包括多个磁性材料图案和将磁性材料图案彼此分开的多个绝缘材料图案。

    MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE INCLUDING THE SAME
    99.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE INCLUDING THE SAME 审中-公开
    包括其中的磁性元件和存储器件

    公开(公告)号：US20140339660A1

    公开(公告)日：2014-11-20

    申请号：US14247245

    申请日：2014-04-07

    Applicant: Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

    Inventor： Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

    IPC: H01L43/02 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: Provided are magnetoresistive elements, memory devices including the same, and an operation methods thereof. A magnetoresistive element may include a free layer, and the free layer may include a plurality of regions (layers) having different properties. The free layer may include a plurality of regions (layers) having different Curie temperatures. The Curie temperature of the free layer may change regionally or gradually away from the pinned layer. The free layer may include a first region having ferromagnetic characteristics at a first temperature and a second region having paramagnetic characteristics at the first temperature. The first region and the second region both may have ferromagnetic characteristics at a second temperature lower than the first temperature. The effective thickness of the free layer may change with temperature.

    Abstract translation: 提供了磁阻元件，包括其的存储器件及其操作方法。 磁阻元件可以包括自由层，并且自由层可以包括具有不同特性的多个区域（层）。 自由层可以包括具有不同居里温度的多个区域（层）。 自由层的居里温度可以在区域上或逐渐地远离被钉扎层的位置改变。 自由层可以包括在第一温度下具有铁磁特性的第一区域和在第一温度下具有顺磁特性的第二区域。 第一区域和第二区域在低于第一温度的第二温度下都可以具有铁磁特性。 自由层的有效厚度可随温度而变化。

    MAGNETIC MEMORY DEVICES AND METHODS OF WRITING DATA TO THE SAME
    100.
    发明申请
    MAGNETIC MEMORY DEVICES AND METHODS OF WRITING DATA TO THE SAME 有权
    磁记忆装置及将数据写入其中的方法

    公开(公告)号：US20140269036A1

    公开(公告)日：2014-09-18

    申请号：US14184043

    申请日：2014-02-19

    Applicant: Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

    Inventor： Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/18

    Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

    Abstract translation: 磁存储器件包括磁阻单元，其包括具有可变磁化方向的自由层和具有固定磁化方向的固定层，磁阻单元上的位线，并且包括具有旋转霍尔效应的旋转霍尔效应材料层， 层; 和位于磁阻电池下方的下电极。 在位线和下电极之间施加电压，使得电流通过磁阻电池。

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