Draw vice
    91.
    发明授权
    Draw vice 失效
    绘图

    公开(公告)号:US06378624B1

    公开(公告)日:2002-04-30

    申请号:US09620530

    申请日:2000-07-20

    申请人: Yang-Ting Liu

    发明人: Yang-Ting Liu

    IPC分类号: B23C526

    CPC分类号: B25B27/0007

    摘要: A draw vice includes a body having two handles, a center tube mounted in the body and driven to rotate a workpiece, a center tube rotating device pivoted to the body and controlled to rotate the center tube, and a center tube locking device adapted to lock the center tube against rotary motion, wherein the center tube rotating device includes a shell pivoted to the handles, an input gear, an output gear coupled to the center tube, a knob coupled to the input gear and adapted to rotate the center tube, and at least one transmission gear means coupled between the input gear and the output gear for enabling the center tube and the output gear to be rotated at a speed of rotation higher than the input gear.

    摘要翻译: 抽屉包括具有两个手柄的主体,安装在主体中并被驱动以旋转工件的中心管,枢转到主体并被控制以使中心管旋转的中心管旋转装置,以及适于锁定的中心管锁定装置 所述中心管旋转装置包括枢转到所述把手的壳体,输入齿轮,联接到所述中心管的输出齿轮,连接到所述输入齿轮并适于旋转所述中心管的旋钮,以及 连接在所述输入齿轮和所述输出齿轮之间的至少一个传动齿轮装置,用于使所述中心管和所述输出齿轮以比所述输入齿轮高的旋转速度旋转。

    Process of making semiconductor device having regions of insulating material formed in a semiconductor substrate
    92.
    发明授权
    Process of making semiconductor device having regions of insulating material formed in a semiconductor substrate 有权
    制造具有形成在半导体衬底中的绝缘材料区域的半导体器件的工艺

    公开(公告)号:US06350659B1

    公开(公告)日:2002-02-26

    申请号:US09388297

    申请日:1999-09-01

    IPC分类号: H10L2176

    CPC分类号: H01L21/76297 H01L21/76294

    摘要: A process for fabricating a silicon-on-insulator integrated circuit in conjunction with a process for shallow trench isolation is disclosed. The shallow trench isolation is performed to define active regions in the silicon substrate. The active regions are electrically isolated from each other by regions of silicon dioxide formed in the substrate by the shallow trench isolation process. The height of the silicon dioxide regions above the substrate surface defines the combined thickness of the islands of silicon dioxide and the silicon formed over the islands of silicon dioxide. A mask is then formed on the silicon substrate with the regions of silicon dioxide formed therein. The mask defines the regions on the silicon substrate surface on which the islands of silicon dioxide are to be formed. The silicon dioxide islands are formed with the mask in place, and the mask is subsequently removed. Single crystal silicon is formed epitaxially on the structure. This is followed by the deposition of amorphous silicon and recrystallization to form a structure that has islands of insulating silicon dioxide formed in the silicon substrate and below the substrate surface.

    摘要翻译: 公开了一种结合用于浅沟槽隔离的工艺制造绝缘体上硅集成电路的工艺。 执行浅沟槽隔离以限定硅衬底中的有源区。 活性区域通过浅沟槽隔离工艺在衬底中形成的二氧化硅的区域彼此电隔离。 衬底表面上方的二氧化硅区域的高度限定二氧化硅岛和二氧化硅岛上形成的硅的组合厚度。然后在硅衬底上形成掩模,其中形成二氧化硅区域。 掩模限定硅衬底表面上将要形成二氧化硅岛的区域。 二氧化硅岛形成有掩模就位,随后去除掩模。 在结构上外延形成单晶硅。 然后沉积非晶硅并重结晶以形成在硅衬底中形成的绝缘二氧化硅岛和衬底表面下方的结构。

    Integrated circuit device in which gate oxide thickness is selected to
control plasma damage during device fabrication
    93.
    发明授权
    Integrated circuit device in which gate oxide thickness is selected to control plasma damage during device fabrication 失效
    选择栅极氧化物厚度以在器件制造期间控制等离子体损伤的集成电路器件

    公开(公告)号:US6075273A

    公开(公告)日:2000-06-13

    申请号:US99827

    申请日:1998-06-18

    申请人: Chun-Ting Liu

    发明人: Chun-Ting Liu

    摘要: An integrated circuit device in which the gate oxide of the devices in the integrated circuit device is selected to control plasma damage during device processing is disclosed. The integrated circuit device has at least two transistors, each transistor having a source, drain, gate and channel. At least one device has a channel length that is greater than 0.5 .mu.m and at least one device has a channel length that is less than 0.5 .mu.m. The device having a channel length that is greater than 0.5 .mu.m has a gate oxide thickness that is less than the gate oxide thickness of the device having a channel length that is less than 0.5 .mu.m. The relative thickness of the gate oxide for the shorter channel devices and the longer channel devices is selected so that the tunneling leakage current that passes through the gate oxide for the longer channel devices is at least two orders of magnitude greater than the tunneling current through the gate oxide of the shorter channel devices.

    摘要翻译: 公开了一种集成电路器件,其中选择集成电路器件中的器件的栅极氧化物以在器件处理期间控制等离子体损伤。 集成电路器件具有至少两个晶体管,每个晶体管具有源极,漏极,栅极和沟道。 至少一个装置具有大于0.5μm的通道长度,并且至少一个装置具有小于0.5μm的通道长度。 具有大于0.5μm的沟道长度的器件具有小于沟道长度小于0.5μm的器件的栅极氧化物厚度的栅极氧化物厚度。 选择用于较短沟道器件和较长沟道器件的栅极氧化物的相对厚度,使得通过较长沟道器件的栅极氧化物的隧道漏电流比通过该沟道器件的隧穿电流大至少两个数量级 较短通道器件的栅极氧化物。

    Foldable riveter frame
    94.
    发明授权
    Foldable riveter frame 失效
    可折叠铆钉架

    公开(公告)号:US5367757A

    公开(公告)日:1994-11-29

    申请号:US167075

    申请日:1993-12-15

    申请人: Yang-Ting Liu

    发明人: Yang-Ting Liu

    IPC分类号: B21J15/04 B21J15/38

    摘要: A folding heavyweight riveter includes a base frame assembly, a pull shaft driven to move axially relative to the base frame assembly in moving riveting elements to set rivets or rivnuts, two rollers mounted on the pull shaft at two opposite sides by two clamping plates, two folding handles bilaterally pivoted to the base frame assembly, two links linked between the handles and the clamping plates, wherein each handle is comprised of a front handle frame, an intermediate handle frame pivoted to the front handle frame, and a grip connected to the intermediate handle frame, and a lock device to lock the front and intermediate handle frames in the operative position.

    摘要翻译: 折叠式重量级铆钉器包括底架组件,拉动轴驱动以相对于基架组件在移动铆接元件中轴向移动以设置铆钉或铆钉,两个辊通过两个夹紧板在两个相对侧安装在拉动轴上,两个辊 双向枢转到基架组件的折叠手柄,两个连接在把手和夹板之间的连杆,其中每个手柄包括前手柄框架,枢转到前手柄框架的中间手柄框架和连接到中间件 手柄框架和锁定装置,以将前手柄框架和中间手柄框架锁定在操作位置。

    Electrical cases cowling
    95.
    外观设计

    公开(公告)号:USD1015278S1

    公开(公告)日:2024-02-20

    申请号:US29799927

    申请日:2021-07-17

    申请人: Ting Liu

    设计人: Ting Liu

    摘要: FIG. 1 is a perspective view of an electrical cases cowling showing my new design;
    FIG. 2 is a front elevation view thereof;
    FIG. 3 is a rear elevation view thereof;
    FIG. 4 is a left side elevation view thereof;
    FIG. 5 is a right side elevation view thereof;
    FIG. 6 is a top plan view thereof;
    FIG. 7 is a bottom plan view thereof; and,
    FIG. 8 is an enlarged partial view of FIG. 2.

    LIGHT SOURCE ASSEMBLY
    96.
    发明申请

    公开(公告)号:US20210157224A1

    公开(公告)日:2021-05-27

    申请号:US17090253

    申请日:2020-11-05

    申请人: Hsueh-Ting LIU

    发明人: Hsueh-Ting LIU

    摘要: A light source assembly includes a light source unit, a light collecting unit, a light separating unit and a light converting unit. The light source unit generates a first light beam having a first color and a first optical path. The light collecting unit has a light entering side and a light exiting side and is configured to collimate and condense the light beam incident on the light entering side. The light separating unit is disposed on an area between the light entering side and the light exiting side of the light collecting unit for reflecting the first light beam entering from the light entering side of the light collecting unit. The light converting unit absorbs the first light beam reflected from a light separating unit and generates a converted light beam having a second color.

    Method and device for eliminating echoes
    97.
    发明授权
    Method and device for eliminating echoes 有权
    消除回波的方法和装置

    公开(公告)号:US09443528B2

    公开(公告)日:2016-09-13

    申请号:US14400289

    申请日:2012-06-15

    摘要: Provided are a method and device for eliminating echo. The method comprises: an echo path characteristic parameter of an echo signal is estimated; a source signal of the echo signal is taken as a reference signal, and an echo estimation signal is generated according to the echo path characteristic parameter; and the echo estimation signal is subtracted from a speech signal to be processed. The disclosure solves the problem in the related art that self-adaptation cannot be achieved when a returned near-end audio is suppressed, thus facilitating the enhancement of the speech quality of a conference and the improvement of user experience.

    摘要翻译: 提供了一种消除回波的方法和装置。 该方法包括:估计回波信号的回波路径特性参数; 将回波信号的源信号作为参考信号,根据回波路径特性参数生成回波估计信号; 并从要处理的语音信号中减去回波估计信号。 本公开解决了相关技术中的问题,当返回的近端音频被抑制时不能实现自适应,从而有助于提高会议的语音质量和改善用户体验。

    Multi-junction solar cell with dilute nitride sub-cell having graded doping
    98.
    发明授权
    Multi-junction solar cell with dilute nitride sub-cell having graded doping 有权
    具有分级掺杂的稀氮化物子电池的多结太阳能电池

    公开(公告)号:US09214580B2

    公开(公告)日:2015-12-15

    申请号:US12914710

    申请日:2010-10-28

    IPC分类号: H01L31/0687 H01L31/0304

    摘要: A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell. The upper sub-cell typically has the highest bandgap and is lattice matched to the adjacent sub-cell. In further embodiments, a multi junction solar cell according to the invention may comprise four, five or more sub-cells in which the one or more sub-cells may each comprise exponentially doped dilute nitride alloys.

    摘要翻译: 具有稀氮化物基子电池的晶格匹配太阳能电池具有指数掺杂,从而控制太阳能电池的载流能力。 具体地说,公开了具有至少一个具有可变掺杂的基极或发射极的稀氮氮化物子电池的太阳能电池。 在一个实施例中,晶格匹配多结太阳能电池具有上部子电池,中间子电池和下部稀的氮化物子电池,下部稀土氮化物子电池在基极和/或发射极中具有掺杂, 至少部分地指数地掺杂,以便改善其太阳能电池性能特征。 在构造中,稀氮氮化物子电池可能具有最低的带隙并且与衬底晶格匹配,中间电池通常在稀氮化物子电池与氮化稀土子电池晶格匹配时具有较高的带隙。 上部子单元通常具有最高的带隙并且与相邻的子单元格子匹配。 在另外的实施例中,根据本发明的多结太阳能电池可以包括四个,五个或更多个子电池,其中一个或多个子电池可以各自包含指数掺杂的稀氮化物合金。

    Universal motor
    99.
    发明授权
    Universal motor 有权
    通用电机

    公开(公告)号:US09099911B2

    公开(公告)日:2015-08-04

    申请号:US13196107

    申请日:2011-08-02

    IPC分类号: H02K23/64 H02K23/40

    摘要: A universal motor includes a wound rotor and a stator. The stator has stator windings and a stator code. The stator core has at least two poles with the stator windings wound thereon and a yoke connecting the poles. Each pole has a neck and a pole shoe forming a continuous pole arc facing the rotor. The ratio of the diameter of the motor to the width of the stator core measured across the poles is between 0.65˜0.95.

    摘要翻译: 通用电动机包括绕线转子和定子。 定子具有定子绕组和定子编码。 定子铁芯具有至少两个磁极,定子绕组缠绕在其上,并具有连接磁极的磁轭。 每个杆具有颈部和极靴,形成面向转子的连续极弧。 电机直径与定子铁心两端测量的磁极宽度之比在0.65〜0.95之间。

    Microfluidic chip for high-throughput perfusion-based three-dimensional cell culture
    100.
    发明授权
    Microfluidic chip for high-throughput perfusion-based three-dimensional cell culture 有权
    微流控芯片用于高通量灌注型三维细胞培养

    公开(公告)号:US09068281B2

    公开(公告)日:2015-06-30

    申请号:US13241123

    申请日:2011-09-22

    IPC分类号: C40B60/12 C12M3/06 C12M1/34

    摘要: A microfluidic chip for three-dimensional cell culture with high-throughput perfusion includes an array of cell culture units, each unit including a cell culture medium inlet hole connecting to one cell culture medium tank, at least one micro-bioreactor, at least one microchannel and at least one medium collection and analysis tank. Each medium collection and analysis tank is connected to an air chamber with an air channel and the air chamber has negative pressure source holes to generate negative pressure to drive the culture medium. The microfluidic chip also includes an intermediate plate connected to the bottom surface of the roof, and two bottom plates detachably assembled at the bottom of the intermediate plate. The first and second bottom surfaces have micro-bioreactors and cylindrical recessed slots and the intermediate plate has corresponding holes to achieve the goal of three-dimensional cell culture using minimum experimental resources with high-throughput perfusion.

    摘要翻译: 用于具有高通量灌注的三维细胞培养的微流体芯片包括一系列细胞培养单元,每个单元包括连接到一个细胞培养基罐的细胞培养基入口孔,至少一个微生物反应器,至少一个微通道 和至少一个介质收集和分析罐。 每个介质收集和分析罐连接到具有空气通道的空气室,并且空气室具有负压源孔以产生负压以驱动培养基。 微流体芯片还包括连接到屋顶底面的中间板,以及可拆卸地组装在中间板的底部的两个底板。 第一和第二底面具有微生物反应器和圆柱形凹槽,并且中间板具有相应的孔,以使用具有高通量灌注的最小实验资源实现三维细胞培养的目标。