公开(公告)号：US20080012078A1

公开(公告)日：2008-01-17

申请号：US11849682

申请日：2007-09-04

申请人： Tsutomu Sato ,  Hajime Nagano ,  Ichiro Mizushima ,  Takashi Yamada ,  Yuso Udo ,  Shinichi Nitta

发明人： Tsutomu Sato ,  Hajime Nagano ,  Ichiro Mizushima ,  Takashi Yamada ,  Yuso Udo ,  Shinichi Nitta

IPC分类号： H01L27/01

CPC分类号： H01L21/764 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/10897 ,  H01L27/1203 ,  H01L27/1207

摘要： A semiconductor device including a first semiconductor layer formed on a semiconductor substrate, a second semiconductor layer surrounding the first semiconductor layer, the second semiconductor layer being formed on the semiconductor substrate with one of an insulating film and a cavity, and a third semiconductor layer surrounding the second semiconductor layer, the third semiconductor layer being formed on the semiconductor substrate.

摘要翻译： 一种半导体器件，包括形成在半导体衬底上的第一半导体层，围绕第一半导体层的第二半导体层，在半导体衬底上形成有绝缘膜和空腔中的一个的第二半导体层和围绕 所述第二半导体层，所述第三半导体层形成在所述半导体衬底上。

公开(公告)号：US20070269225A1

公开(公告)日：2007-11-22

申请号：US11749276

申请日：2007-05-16

申请人： Tsutomu Sato

发明人： Tsutomu Sato

IPC分类号： G03G15/00 ,  G03G15/08

CPC分类号： G03G15/0889 ,  G03G15/0863 ,  G03G15/0865 ,  G03G15/087 ,  G03G15/0875 ,  G03G15/0877 ,  G03G21/1647 ,  G03G21/1676 ,  G03G2215/0695 ,  G03G2221/163 ,  G03G2221/1657

摘要： A toner cartridge comprises a toner container which contains toner, a driving member which rotationally drives a conveying member, an agitating member which agitates a toner in the toner container while being rotated, a driven member which rotates in association with the driving member which is for rotationally driving the agitating member, and a rotational body which rotates according to rotation of the driven member, has a plurality of slits in rotational circumference for identifying a type of the toner cartridge, and has 1/K or more of the slits when a ratio of a rotational speed R1 (rad/s) of the driving member and a rotational speed R2 (rad/s) of the driven member is K=R2/R1.

摘要翻译： 调色剂盒包括一个容纳调色剂的调色剂容器，一个旋转地驱动传送部件的驱动部件，一个搅拌部件，其在旋转时搅拌调色剂容器中的调色剂;与驱动部件相关联地旋转的从动部件， 旋转地驱动搅拌构件，以及根据从动构件的旋转而旋转的旋转体，具有旋转周向的多个狭缝，用于识别调色剂盒的类型，并且当比例为1 / K以上时， 驱动构件的转速R 1（rad / s）和从动构件的转速R 2（rad / s）为K = R 2 / R 1。

公开(公告)号：US07285825B2

公开(公告)日：2007-10-23

申请号：US10407677

申请日：2003-04-07

申请人： Hajime Nagano ,  Shinichi Nitta ,  Takashi Yamada ,  Tsutomu Sato ,  Katsujiro Tanzawa ,  Ichiro Mizushima

发明人： Hajime Nagano ,  Shinichi Nitta ,  Takashi Yamada ,  Tsutomu Sato ,  Katsujiro Tanzawa ,  Ichiro Mizushima

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L21/84 ,  H01L21/76251 ,  H01L27/10829 ,  H01L27/10894 ,  H01L27/1203 ,  Y10S438/977

摘要： A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major surfaces oppose each other. The active-layer-side substrate and part of the oxide film are selectively etched from a surface opposite to the major surface of the active-layer-side substrate to a halfway depth of the buried oxide film formed from the thermal oxide films at the bonding portion. A sidewall insulating film is formed on the etching side surface portion of the active-layer-side substrate. Then, the remaining buried oxide film except that immediately under the active-layer-side substrate is selectively etched. A single-crystal semiconductor layer is formed on the support-side substrate exposed by removing the buried oxide film.

摘要翻译： 在主表面上具有热氧化膜的支撑侧基板在主表面上具有热氧化膜的有源层侧基板上接合，同时使主表面彼此相对。 有源层侧基板和氧化膜的一部分从与有源层侧基板的主表面相反的表面选择性地蚀刻到由热氧化膜形成的掩埋氧化膜的中间深度 一部分。 在有源层侧基板的蚀刻侧面部形成有侧壁绝缘膜。 然后，选择性地蚀刻除有源层侧基板之下的剩余的掩埋氧化膜。 通过去除掩埋氧化膜而暴露的支撑侧基板上形成单晶半导体层。

公开(公告)号：US07235456B2

公开(公告)日：2007-06-26

申请号：US11340594

申请日：2006-01-27

申请人： Tsutomu Sato ,  Mie Matsuo ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Shinichi Takagi

发明人： Tsutomu Sato ,  Mie Matsuo ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Shinichi Takagi

IPC分类号： H01L21/764 ,  H01L27/12

CPC分类号： H01L27/10805 ,  B82Y20/00 ,  G02B6/122 ,  G02B6/1225 ,  G02B2006/12097 ,  H01L21/3247 ,  H01L21/7624 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/764 ,  H01L21/84 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/0657 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78639

摘要： To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.

摘要翻译： 通过在半导体衬底的表面上二维地形成沟槽，然后对半导体衬底进行热处理，将多个沟槽改变为一个平坦的空间。

公开(公告)号：US20060292779A1

公开(公告)日：2006-12-28

申请号：US11463777

申请日：2006-08-10

申请人： Huajie Chen ,  Dureseti Chidambarrao ,  Sang-Hyun Oh ,  Siddhartha Panda ,  Werner Rausch ,  Tsutomu Sato ,  Henry Utomo

发明人： Huajie Chen ,  Dureseti Chidambarrao ,  Sang-Hyun Oh ,  Siddhartha Panda ,  Werner Rausch ,  Tsutomu Sato ,  Henry Utomo

IPC分类号： H01L21/8234

CPC分类号： H01L29/6659 ,  H01L21/26506 ,  H01L21/28052 ,  H01L21/28079 ,  H01L21/7624 ,  H01L29/1045 ,  H01L29/165 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： A field effect transistor (“FET”) is provided which includes a gate stack overlying a single-crystal semiconductor region of a substrate, a pair of first spacers disposed over sidewalls of said gate stack, and a pair of regions consisting essentially of a single-crystal semiconductor alloy which are disposed on opposite sides of the gate stack. Each of the semiconductor alloy regions is spaced a first distance from the gate stack. The source region and drain region of the FET are at least partly disposed in respective ones of the semiconductor alloy regions, such that the source region and the drain region are each spaced a second distance from the gate stack by a first spacer of the pair of first spacers, the second distance being different from the first distance.

摘要翻译： 提供场效应晶体管（“FET”），其包括覆盖衬底的单晶半导体区域的栅极堆叠，设置在所述栅极堆叠的侧壁上的一对第一间隔区，以及基本上由单个 晶体半导体合金，其设置在栅叠层的相对侧上。 每个半导体合金区域与栅极叠层隔开第一距离。 FET的源极区域和漏极区域至少部分地设置在半导体合金区域的相应半导体合金区域中，使得源极区域和漏极区域之间的距离与栅极叠层间隔开第二距离， 第一间隔物，第二距离与第一距离不同。

公开(公告)号：US07019364B1

公开(公告)日：2006-03-28

申请号：US09650748

申请日：2000-08-30

申请人： Tsutomu Sato ,  Mie Matsuo ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Shinichi Takagi

发明人： Tsutomu Sato ,  Mie Matsuo ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Shinichi Takagi

IPC分类号： H01L27/12

CPC分类号： H01L27/10805 ,  B82Y20/00 ,  G02B6/122 ,  G02B6/1225 ,  G02B2006/12097 ,  H01L21/3247 ,  H01L21/7624 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/764 ,  H01L21/84 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/0657 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78639

摘要： To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.

摘要翻译： 通过在半导体衬底的表面上二维地形成沟槽，然后对半导体衬底进行热处理，将多个沟槽改变为一个平坦的空间。

公开(公告)号：US07018981B2

公开(公告)日：2006-03-28

申请号：US10362574

申请日：2001-08-23

申请人： Hiroharu Matsuoka ,  Tsutomu Sato

发明人： Hiroharu Matsuoka ,  Tsutomu Sato

IPC分类号： A61K38/12 ,  C07K7/64

CPC分类号： C07K5/0202 ,  A61K38/00 ,  C07K5/0205 ,  C07K5/0215

摘要： The present invention aims to provide cyclic peptide derivatives having motilin receptor antagonist activity and are useful as pharmaceuticals. The present invention provides compounds of general formula (1): wherein R1 represents an optionally substituted phenyl group or the like; R2 represents an amino group or the like; R3 to R6 represent a hydrogen atom, a methyl group or the like; R7 represents a hydrogen atom or the like; V to Z represent a carbonyl group or a methylene group; m represents an integer of 0–2; and n represents an integer of 0–3; or a hydrate or a pharmaceutically acceptable salt thereof.

摘要翻译： 本发明旨在提供具有胃动素受体拮抗剂活性的环肽衍生物，并且可用作药物。 本发明提供通式（1）的化合物：其中R 1表示任选取代的苯基等; R 2表示氨基等; R 3至R 6表示氢原子，甲基等; R 7表示氢原子等; V至Z表示羰基或亚甲基; m表示0-2的整数; n表示0〜3的整数。 或其水合物或其药学上可接受的盐。

公开(公告)号：US07018904B2

公开(公告)日：2006-03-28

申请号：US10921273

申请日：2004-08-19

申请人： Takashi Yamada ,  Hajime Nagano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Hisato Oyamatsu ,  Shinichi Nitta

发明人： Takashi Yamada ,  Hajime Nagano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Hisato Oyamatsu ,  Shinichi Nitta

IPC分类号： H01L21/76 ,  H01L21/20

CPC分类号： H01L27/10894 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/10832 ,  H01L27/10861 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip comprises a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insulator, and a boundary layer located at the boundary between the bulk device region and the SOI device region. The bulk device region has a first device-fabrication surface in which a bulk device is positioned on the bulk growth layer. The SOI device region has a second device-fabrication surface in which an SOI device is positioned on the silicon layer. The first and second device-fabrication surfaces are positioned at a substantially uniform level.

公开(公告)号：US20060062117A1

公开(公告)日：2006-03-23

申请号：US11233146

申请日：2005-09-23

申请人： Soh Noguchi ,  Tsutomu Sato ,  Tatsuya Tomura ,  Yasunobu Ueno

发明人： Soh Noguchi ,  Tsutomu Sato ,  Tatsuya Tomura ,  Yasunobu Ueno

IPC分类号： G11B19/02 ,  G11B7/12

CPC分类号： G11B7/246 ,  G11B7/00456 ,  G11B7/24082 ,  G11B7/245 ,  G11B7/2463 ,  G11B7/2467 ,  G11B7/247 ,  G11B7/2472 ,  G11B7/248 ,  G11B7/2492 ,  G11B7/2531 ,  G11B7/2532 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/2535 ,  G11B7/2542 ,  G11B7/256 ,  G11B7/2575 ,  G11B7/2585 ,  G11B7/259 ,  G11B7/2595

摘要： An object is to provide a recording and reproducing method of a dyestuff-based, write-once DVD medium which can obtain a good recording waveform at a time of carrying out high linear speed recording. To this end, there are provided a recording and reproducing method and a recording and reproducing apparatus of a dyestuff-based, write-once DVD medium in which each mark other than a shortest length mark is recorded on a recording layer at an optical recording medium formed by having at least a recording layer containing an organic dyestuff on a substrate having a guide groove at which a high-frequency wobble is provided, by using one pulse light at which two places which are a leading portion and a trailing end portion of a heating pulse are made to be high-output for a given time and at which a pulse light power of the leading portion of the heating pulse is greater than a pulse light power of the trailing end portion, and the recording is reproduced by reproducing light.

摘要翻译： 本发明的目的是提供一种基于染料的一次写入DVD介质的记录和再现方法，其可以在执行高线速记录时获得良好的记录波形。 为此，提供了一种基于染料的一次写入DVD介质的记录和再现方法以及记录和再现装置，其中除了最短长度标记之外的每个标记被记录在光学记录介质的记录层上 通过使用一个脉冲光在至少具有含有有机染料的记录层的基板上形成有具有引导槽的高频摆动的两个位置，其中两个位置是 加热脉冲在给定时间内被高输出，并且加热脉冲的前导部分的脉冲光功率大于后端部分的脉冲光功率，并且通过再现光来再现记录。

公开(公告)号：US07009273B2

公开(公告)日：2006-03-07

申请号：US10665614

申请日：2003-09-19

申请人： Kazumi Inoh ,  Hidemi Ishiuchi ,  Satoshi Matsuda ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Kazumi Inoh ,  Hidemi Ishiuchi ,  Satoshi Matsuda ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L29/00

CPC分类号： H01L27/10894 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/764 ,  H01L21/84 ,  H01L27/0218 ,  H01L27/105 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10885 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/66181 ,  H01L29/7841

摘要： A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.