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91.
公开(公告)号:US20200217648A1
公开(公告)日:2020-07-09
申请号:US16817552
申请日:2020-03-12
Applicant: ASML Netherlands B.V.
Inventor: Henricus Petrus Maria PELLEMANS , Arie Jeffrey DEN BOEF
Abstract: A device manufacturing method is disclosed. A radiated spot is directed onto a target pattern formed on a substrate. The radiated spot is moved along the target pattern in a series of discrete steps, each discrete step corresponding to respective positions of the radiated spot on the target pattern, Measurement signals are generated that correspond to respective ones of the positions of the radiated spot on the target pattern. A single value is determined that is based on the measurement signals and that is representative of the property of the substrate.
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公开(公告)号:US20200072599A1
公开(公告)日:2020-03-05
申请号:US16558457
申请日:2019-09-03
Applicant: ASML Netherlands B.V.
Inventor: Marinus Johannes Maria VAN DAM , Arie Jeffrey DEN BOEF , Nitesh PANDEY
Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the apparatus comprising: a radiation source for generating illumination radiation; at least two illumination branches for illuminating the structure on the substrate, the illumination branches being configured to illuminate the structure from different angles; and a radiation switch configured to receive the illumination radiation and transfer at least part of the radiation to a selectable one of the at least two illumination branches.
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公开(公告)号:US20190271915A1
公开(公告)日:2019-09-05
申请号:US16413985
申请日:2019-05-16
Applicant: ASML NETHERLANDS B.V.
Inventor: Arie Jeffrey DEN BOEF , Kaustuve Bhattacharyya
IPC: G03F7/20 , G01N21/47 , G01N21/956
Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.
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公开(公告)号:US20190086201A1
公开(公告)日:2019-03-21
申请号:US16121780
申请日:2018-09-05
Applicant: ASML Netherlands B.V.
Inventor: Arie Jeffrey DEN BOEF , Simon Reinald HUISMAN
IPC: G01B11/27
Abstract: A method of determining a parameter of a patterning process applied to an object comprising two features (for example an overlay of the two features) comprises: irradiating the two features of the object with a radiation beam and receiving at least a portion of the radiation beam scattered from the two features of the object. The at least a portion of the radiation beam comprises: a first portion comprising at least one diffraction order and a second portion comprising at least one diffraction order that is different to a diffraction order of the first portion. The method further comprises moderating a phase difference between the first and second portions and combining the first and second portions such that they interfere to produce a time dependent intensity signal. The method further comprises determining the parameter of the patterning process from a contrast of the time dependent intensity signal.
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公开(公告)号:US20190072859A1
公开(公告)日:2019-03-07
申请号:US16117614
申请日:2018-08-30
Applicant: ASML Netherlands B.V.
Inventor: Martin Jacobus Johan JAK , Martin EBERT , Arie Jeffrey DEN BOEF , Nitesh PANDEY
IPC: G03F7/20
Abstract: A method comprising: evaluating a plurality of polarization characteristics associated with measurement of a metrology target of a substrate processed using a patterning process, against one or more measurement quality parameters; and selecting one or more polarization characteristics from the plurality of polarization characteristics based on one or more of the measurement quality parameters
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公开(公告)号:US20180246423A1
公开(公告)日:2018-08-30
申请号:US15754470
申请日:2016-08-22
Applicant: ASML Netherlands B.V.
Inventor: Simon Gijsbert Josephus MATHIJSSEN , Arie Jeffrey DEN BOEF , Nitesh PANDEY , Patricius Aloysius Jacobus TINNEMANS , Stefan Michiel WITTE , Kjeld Sijbrand Eduard EIKEMA
CPC classification number: G03F9/7003 , G01B11/272 , G03F9/7046 , G03F9/7088 , G03F9/7092 , G06T7/73
Abstract: A lithographic apparatus comprises comprise a substrate table constructed to hold a substrate; and a sensor configured to sense a position of an alignment mark provided onto the substrate held by the substrate table. The sensor comprises a source of radiation configured to illuminate the alignment mark with a radiation beam, a detector configured to detect the radiation beam, having interacted with the alignment mark, as an out of focus optical pattern, and a data processing system. The data processing system is configured to receive image data representing the out of focus optical pattern, and process the image data for determining alignment information, comprising applying a lensless imaging algorithm to the out of focus optical pattern.
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公开(公告)号:US20180136570A1
公开(公告)日:2018-05-17
申请号:US15869661
申请日:2018-01-12
Applicant: ASML Netherlands B.V.
Inventor: Si-Han ZENG , Yue-Lin PENG , Jen-Yu FANG , Arie Jeffrey DEN BOEF , Alexander STRAAIJER , Ching-Yi HUNG , Patrick WARNAAR
CPC classification number: G03F7/70633 , G01B11/24 , G01B11/272
Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.
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公开(公告)号:US20170315456A1
公开(公告)日:2017-11-02
申请号:US15487558
申请日:2017-04-14
Applicant: ASML Netherlands B.V.
Inventor: Nan LIN , Arie Jeffrey DEN BOEF , Sander Bas ROOBOL , Simon Gijsbert Josephus MATHIJSSEN , Niels GEYPEN
CPC classification number: G03F7/70616 , G01B11/24 , G01N21/9501 , G02F1/3551 , G02F1/37 , G03F7/70625 , G03F7/70633 , H01S3/0092 , H01S3/1305 , H01S3/1625 , H01S3/1636
Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.
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公开(公告)号:US20170184511A1
公开(公告)日:2017-06-29
申请号:US15388463
申请日:2016-12-22
Applicant: ASML Netherlands B.V.
CPC classification number: G01N21/8806 , G01N2021/8822 , G01N2201/061 , G03F7/70191 , G03F7/70483 , G03F7/7065 , G03F9/7049 , G03F9/7065
Abstract: A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). The lithographic apparatus has an inspection apparatus with an illumination system that utilizes illuminating radiation with a wavelength of 2-40 nm. The illumination system includes an optical element that splits the illuminating radiation into a first and a second illuminating radiation and induces a time delay to the first or the second illuminating radiation. A detector detects the radiation that has been scattered by a target structure. The inspection apparatus has a processing unit operable to control a time delay between the first scattered radiation and the second scattered radiation so as to optimize a property of the combined first and second scattered radiation.
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公开(公告)号:US20170102621A1
公开(公告)日:2017-04-13
申请号:US15385584
申请日:2016-12-20
Applicant: ASML NETHERLANDS B.V.
Inventor: Joeri LOF , Hans BUTLER , Sjoerd Nicolaas Lambertus DONDERS , Aleksey Yurievich KOLESNYCHENKO , Erik Roelof LOOPSTRA , Hendricus Johannes Maria MEIJER , Johannes Catherinus Hubertus MULKENS , Roelof Aeilko Siebranc RITSEMA , Frank VAN SCHAIK , Timotheus Franciscus SENGERS , Klaus SIMON , Joannes Theodoor DE SMIT , Alexander STRAAIJER , Bob STREEFKERK , Erik Theodorus Maria BIJLAART , Christiaan Alexander HOOGENDAM , Helmar VAN SANTEN , Marcus Adrianus VAN DE KERKHOF , Mark KROON , Arie Jeffrey DEN BOEF , Joost Jeroen OTTENS , Jeroen Johannes Sophia Maria MERTENS
IPC: G03F7/20
CPC classification number: G03F7/70141 , G03F7/70341 , G03F7/7085 , G03F7/70883
Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.
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